图片仅供参考
制造商IC编号 | K4B2G0846Q-BYMA |
厂牌 | SAMSUNG/三星 |
IC 类别 | DDR3L SDRAM |
IC代码 | 256MX8 DDR3 |
脚位/封装 | FBGA-78 |
外包装 | TRAY |
无铅/环保 | 无铅/环保 |
电压(伏) | 1.35V |
温度规格 | 0 C~+85 C |
速度 | 1866 MBPS |
标准包装数量 | |
标准外箱 | |
Number Of Words | 256M |
Bit Organization | x8 |
Density | 2G |
Internal Banks | 8 Banks |
Generation | 17th Generation |
Power | Low VDD(1.35V) |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
K4B2G0846F-BCMA/BYMA | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
K4B2G0846F-BYMA | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
K4B2G0846F-BYMA/BCNB | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
K4B2G0846F-BYMA000 | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
K4B2G0846F-BYMA0000 | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
K4B2G0846F-BYMA0CV | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
K4B2G0846F-BYMAT00 | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |