Bilder dienen nur der Illustration
Hersteller-Nummer | K4S641633H-RN75 |
Hersteller | SAMSUNG |
Produktkategorie | SDRAM MOBILE |
IC-Code | 4MX16 SD |
Andere Bezeichnungen | K4S641633H-RN75( ) |
K4S641633H-RN75000 | |
K4S641633H-RN750JR | |
K4S641633H-RN75T |
Gehäuse | FBGA-54 |
Verpackung | |
RoHS | RoHS |
Spannungsversorgung | 3.0V/3.3V |
Betriebstemperatur | -25 C~+85 C |
Geschwindigkeit | 133 MHZ |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 4M |
Bit Organization | x16 |
Density | 64M |
Internal Banks | 4 Banks |
Generation | 9th Generation |
Power | Low, i-TCSR |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K4S641633H-RN75 | 4.000 | Anfrage senden | |
K4S641633H-RN75 | 9.600 | 14+ | Anfrage senden |
K4S641633H-RN75 | 2.609 | 05+ | Anfrage senden |
K4S641633H-RN75 | 24 | DC0452 | Anfrage senden |
K4S641633H-RN75 | 2.171 | 2005+ | Anfrage senden |
K4S641633H-RN75 | 481 | 2005+ | Anfrage senden |
K4S641633H-RN75000 | 597 | Anfrage senden | |
K4S641633H-RN75 | 6.107 | Anfrage senden | |
K4S641633H-RN75 | 1.000 | Anfrage senden | |
K4S641633H-RN75 | 1.318 | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
K4M641632K-BN75 | FBGA-54 | 3.3 V | 133 MHZ | -25 C~+85 C |
K4M641633H-HN75 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
K4M641633H-RE75 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
K4M641633K-BG750 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
K4M641633K-BN75 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
K4M641633K-BN750 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
K4M641633K-BN75000 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
K4M641633K-BN750JR | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
K4M641633K-BN75T | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
K4M641633K-BN75T00 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |