K4T1G164QE-HCE7

Produktübersicht

IC Picture

Bilder dienen nur der Illustration

Hersteller-Nummer K4T1G164QE-HCE7
Hersteller SAMSUNG
Produktkategorie DDR2 SDRAM
IC-Code 64MX16 DDR2
Andere Bezeichnungen K4T1G164QE-HCE7000
K4T1G164QE-HCE70JR
K4T1G164QE-HCE7T
K4T1G164QE-HCE7T00
K4T1G164QEHCE70

Produktbeschreibung

Gehäuse FBGA-84
Verpackung
RoHS RoHS
Spannungsversorgung 1.8 V
Betriebstemperatur 0 C~+85 C
Geschwindigkeit 800 MBPS
Standard Stückzahl
Abmessungen Karton
Number Of Words 64M
Bit Organization x16
Density 1G
Internal Banks 8 Banks
Generation 6th Generation
Power Normal Power

Verfügbare Angebote

Teilenummer Menge Datecode
K4T1G164QE-HCE7T00 1.802 Anfrage senden
K4T1G164QE-HCE7 40 Anfrage senden
K4T1G164QE-HCE7 1.280 1016+ Anfrage senden
K4T1G164QE-HCE7T00 1.724 Anfrage senden
K4T1G164QE-HCE7T00 1.910 Anfrage senden
K4T1G164QE-HCE7T00 1.942 Anfrage senden
K4T1G164QE-HCE7 12.800 10+ Anfrage senden
K4T1G164QE-HCE7000 5.200 Anfrage senden
K4T1G164QE-HCE7T00 2.034 Anfrage senden
K4T1G164QE-HCE7T00 2.058 Anfrage senden

FFFE (Form, Fit & Functional Equivalents)

Teilenummer Gehäuse Spannungsversorgung Geschwindigkeit Betriebstemperatur
#MT47H64M16HR-25EI FBGA-84 1.8 V 800 MBPS 0 C~+85 C
:K4T1G164QQ-HCF7 FBGA-84 1.8 V 800 MBPS 0 C~+85 C
AS4C64M16D2-25BCN FBGA-84 1.8 V 800 MBPS 0 C~+85 C
EM68C16CWQD-25H FBGA-84 1.8 V 800 MBPS 0 C~+85 C
EM68C16CWQE-25H FBGA-84 1.8 V 800 MBPS 0 C~+85 C
EM68C16CWQG-25H FBGA-84 1.8 V 800 MBPS 0 C~+85 C
EM68C16CWVB-25H FBGA-84 1.8 V 800 MBPS 0 C~+85 C
H5PS1G63EFR-S5C-C/A FBGA-84 1.8 V 800 MBPS 0 C~+85 C
H5PS1G63EFR-S6C-C 5231EA FBGA-84 1.8 V 800 MBPS 0 C~+85 C
H5PS1G63EFR-S6CLEADFREE FBGA-84 1.8 V 800 MBPS 0 C~+85 C