Bilder dienen nur der Illustration
Hersteller-Nummer | K4T1G164QG-BIE6 |
Hersteller | SAMSUNG |
Produktkategorie | DDR2 SDRAM |
IC-Code | 64MX16 DDR2 |
Andere Bezeichnungen | K4T1G164QG-BIE6000 |
K4T1G164QG-BIE6T00 | |
K4T1G164QG-BIE6TCV |
Gehäuse | FBGA-84 |
Verpackung | |
RoHS | RoHS |
Spannungsversorgung | 1.8 V |
Betriebstemperatur | -40 C~+85 C |
Geschwindigkeit | 667 MBPS |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 64M |
Bit Organization | x16 |
Density | 1G |
Internal Banks | 8 Banks |
Generation | 8th Generation |
Power | Normal Power |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K4T1G164QG-BIE6000 | 6.500 | Anfrage senden | |
K4T1G164QG-BIE6 | 8.000 | Anfrage senden | |
K4T1G164QG-BIE6 | 1.280 | 1507+ | Anfrage senden |
K4T1G164QG-BIE6TCV | 4.000 | 2年内 | Anfrage senden |
K4T1G164QG-BIE6TCV | 10.000 | 2年内 | Anfrage senden |
K4T1G164QG-BIE6 | 2.485 | 15+ | Anfrage senden |
K4T1G164QG-BIE6 | 500 | 15+ | Anfrage senden |
K4T1G164QG-BIE6 | 2.000 | Anfrage senden | |
K4T1G164QG-BIE6 | 2.400 | Anfrage senden | |
K4T1G164QG-BIE6 | 50.000 | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
MT47H64M16HR-3IT:H | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
HY5PS1G1631CFP-Y5I | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
HY5PS1G1631CLFP-Y5I-C | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
IS43DR16640A-3DBLA1 | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
IS43DR16640A-3DBLI | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
IS43DR16640B-3DBI | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
IS43DR16640B-3DBI-TR | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
IS43DR16640B-3DBLA1 | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
IS43DR16640B-3DBLI | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
IS43DR16640BL-3DBLI | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
IS43DR16640C-3DBI | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |