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Hersteller-Nummer MT29F64G08AECABH1-10Z:A
Hersteller MICRON
Produktkategorie FLASH-NAND
Andere Bezeichnungen MT29F64G08AECABH1-10ZA


Gehäuse VBGA-100
Verpackung TRAY
Spannungsversorgung 3.3 V
Betriebstemperatur 0°C~+70°C
Geschwindigkeit 1 MHZ
Standard Stückzahl 1120
Abmessungen Karton
Number Of Words 8G
Bit Organization x8
Density 64G
Package VBGA(100-ball , 12 x 18 x 1.0)
Features Polyimide (if applicable)
Generation Feature Set 1st set of device features
Speed Grade 200 MT/s
Design Revision A
Level SLC
Classification 2-2-2-2 (Die-nCE-RnB-IO Channels)
Production Status Production
Package Material Pb-free
Interface Sync/Async

General Description Micron NAND Flash devices include an asynchronous data interface for high-performance I/O operations. These devices use a highly multiplexed 8-bit bus (DQx) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection (WP#) and monitor device status (R/B#). This Micron NAND Flash device additionally includes a synchronous data interface for high-performance I/O operations. When the synchronous interface is active, WE# becomes CLK and RE# becomes W/R#. Data transfers include a bidirectional data strobe (DQS). This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign. A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND Flash die. A NAND Flash die is the minimum unit that can independently execute commands and report status. A NAND Flash die, in the ONFI specification, is referred to as a logical unit (LUN). For further details, see Device and Array Organization.

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