SST39VF3201C-70-4I-B3KE

Produktübersicht

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Hersteller-Nummer SST39VF3201C-70-4I-B3KE
Hersteller MICROCHIP
Produktkategorie FLASH-NOR
IC-Code 39VF3201
Andere Bezeichnungen SST39VF3201C-70-4I-B3KE-T

Produktbeschreibung

Gehäuse TFBGA-48
Verpackung TRAY
RoHS RoHS
Spannungsversorgung 2.7V-3.6V
Betriebstemperatur -40 C~+85 C
Geschwindigkeit 70 NS
Standard Stückzahl
Abmessungen Karton
Density 32M
Block Protection Bottom Boot-Block
Endurance 10,000 cycles
Package Modifier 48 balls or leads
Product Series Multi-Purpose Flash
Product Family SST
Version C
Envioronmental non-Pb

Description The SST39VF3201C and SST39VF3202C devices are 2M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with proprietary, high-performance CMOS SuperFlash technology. The splitgate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF3201C/3202C write (Program or Erase) with a 2.73.6V power supply. These devices conform to JEDEC standard pin assignments for x16 memories. Featuring high performance Word-Program, the SST39VF3201C/3202C devices provide a typical Word-Program time of 7 µsec. These devices use Toggle Bit, Data# Polling, or RY/BY# pin to indicate the completion of Program operation. To protect against inadvertent write, they have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed typical endurance of 100,000 cycles. Data retention is rated at greater than 100 years. The SST39VF3201C/3202C devices are suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, they significantly improve performance and reliability, while lowering power consumption. They inherently use less energy during Erase and Program than alternative flash technologies. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. These devices also improve flexibility while lowering the cost for program, data, and configuration storage applications. The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Program cycles. To meet high-density, surface mount requirements, the SST39VF3201C/3202C devices are offered in 48-lead TSOP and 48-ball TFBGA packages. See Figure 2 and Figure 3 for pin assignments.

Verfügbare Angebote

Teilenummer Menge Datecode
SST39VF3201C-70-4I-B3KE 5.979 22+ Anfrage senden
SST39VF3201C-70-4I-B3KE 0 Anfrage senden
SST39VF3201C-70-4I-B3KE 1.000 Anfrage senden
SST39VF3201C-70-4I-B3KE 9.600 22+ Anfrage senden
SST39VF3201C-70-4I-B3KE-T 1.348 Anfrage senden
SST39VF3201C-70-4I-B3KE 960 21+ Anfrage senden
SST39VF3201C-70-4I-B3KE 400 18+ Anfrage senden
SST39VF3201C-70-4I-B3KE 10.000 Anfrage senden
SST39VF3201C-70-4I-B3KE 6.000 18+ Anfrage senden
SST39VF3201C-70-4I-B3KE 4.800 19+ Anfrage senden

FFFE (Form, Fit & Functional Equivalents)

Teilenummer Gehäuse Spannungsversorgung Geschwindigkeit Betriebstemperatur
SST39VF3201-70-4I-B3K TFBGA-48 2.7V-3.6V 70 NS -40 C~+85 C
SST39VF3201-70-4I-B3K-T TFBGA-48 2.7V-3.6V 70 NS -40 C~+85 C
SST39VF3201-70-4I-B3KE TFBGA-48 2.7V-3.6V 70 NS -40 C~+85 C
SST39VF3201-70-4I-B3KE-T TFBGA-48 2.7V-3.6V 70 NS -40 C~+85 C
SST39VF3201B-70-4I-B3KE TFBGA-48 2.7V-3.6V 70 NS -40 C~+85 C