K4B2G0846C-HYF8

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4B2G0846C-HYF8
Brand SAMSUNG
Item DDR3 SDRAM
Part No 256MX8 DDR3
Alternate Names K4B2G0846C-HYF8000

Product Details

Package FBGA-78
Outpack
RoHS RoHS
Voltage 1.5 V
Temperature 0 C~+85 C
Speed 1066 MBPS
Std. Pack Qty
Std. Carton
Number Of Words 256M
Bit Organization x8
Density 2G
Internal Banks 8 Banks
Generation 4th Generation
Power Low VDD(1.35V)

Available Offers

Description Qty Datecode
K4B2G0846C-HYF8 4,000 Get Quote
K4B2G0846C-HYF8 2,820 Get Quote
K4B2G0846C-HYF8 2,000 2009+ Get Quote
K4B2G0846C-HYF8000 11,319 Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
H5TQ2G83FFR-G7C FBGA-78 1.5 V 1066 MBPS 0 C~+85 C
HXB15H2G800CF-19F FBGA-78 1.5V 1066 MBPS 0 C~+85 C
K4B2G0846B-HCF8 FBGA-78 1.5 V 1066 MBPS 0 C~+85 C
K4B2G0846B-HCF8000 FBGA-78 1.5 V 1066 MBPS 0 C~+85 C
K4B2G0846B-HYF8 FBGA-78 1.5 V 1066 MBPS 0 C~+85 C
K4B2G0846BHCF0 FBGA-78 1.5 V 1066 MBPS 0 C~+85 C
K4B2G0846BHCF9 FBGA-78 1.5 V 1066 MBPS 0 C~+85 C
K4B2G0846C-HCF8 FBGA-78 1.5 V 1066 MBPS 0 C~+85 C
K4B2G0846D-HCF8 FBGA-78 1.5 V 1066 MBPS 0 C~+85 C
K4B2G0846D-HYF8 FBGA-78 1.5 V 1066 MBPS 0 C~+85 C