K4B4G0846E-BYK0

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4B4G0846E-BYK0
Brand SAMSUNG
Item DDR3L SDRAM
Part No 512MX8 DDR3L
Alternate Names K4B4G0846E-BYK0TCV
K4B4G0846E-BYK000
K4B4G0846E-BYK00
K4B4G0846E-BYK00S3
K4B4G0846E-BYK0000
K4B4G0846E-BYK

Product Details

Package FBGA-78
Outpack TRAY
RoHS RoHS
Voltage 1.35v
Temperature -40°C~+85°C
Speed 800 MHZ
Std. Pack Qty 1280
Std. Carton
Number Of Words 512M
Bit Organization x8
Density 4G
Internal Banks 8 Banks
Power Low VDD(1.35V)
Generation 6th Generation

Available Offers

Description Qty Datecode
K4B4G0846E-BYK0 8,960 Get Quote
K4B4G0846E-BYK0 8,000 15+ Get Quote
K4B4G0846E-BYK0 5,000 18+ Get Quote
K4B4G0846E-BYK0 5,000 15+ Get Quote
K4B4G0846E-BYK0 10,000 17+ Get Quote
K4B4G0846E-BYK0 10,000 Get Quote
K4B4G0846E-BYK0 8,960 15+ Get Quote
K4B4G0846E-BYK0 5,120 18+ Get Quote
K4B4G0846E-BYK0 2,560 1910 Get Quote
K4B4G0846E-BYK0 1,280 17 Get Quote

FFFE (Form, Fit & Functional Equivalents)

Replaceable IC Descriptions

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