K4H511638B-TCCC

Product Overview

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Manufacturer Part No K4H511638B-TCCC
Brand SAMSUNG
Item DDR1 SDRAM
Part No 32MX16 DDR1

Product Details

Package TSOP2(66)
Outpack
RoHS Leaded
Voltage 2.5 V
Temperature 0 C~+85 C
Speed 200 MHZ
Std. Pack Qty
Std. Carton
Number Of Words 32M
Bit Organization x16
Density 512M
Internal Banks 4 Banks
Generation 3rd Generation
Power Normal Power

Available Offers

Description Qty Datecode
K4H511638B-TCCC 1,478 2007+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4H511638F-LCC TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
K4H511638F-LCCC TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
K4H511638F-LCCC/LCCCT TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
K4H511638F-LCCC0 TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
K4H511638F-LCCC000 TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
K4H511638F-LCCC32X16 TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
K4H511638F-LCCC5 TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
K4H511638F-LCCCT TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
K4H511638F-LCCCT00 TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
K4H511638F-LCCCT00 25 TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C