K4S643232H-TI60

Product Overview

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Manufacturer Part No K4S643232H-TI60
Brand SAMSUNG
Item SDRAM
Part No 2MX32 SD
Alternate Names K4S643232H-TI6000
K4S643232H-TI60000
K4S643232HTI60TCV

Product Details

Package TSOP2(86)
Outpack TRAY
RoHS Leaded
Voltage 3.3 V
Temperature -40 C~+85 C
Speed 166 MHZ
Std. Pack Qty
Std. Carton
Number Of Words 2M
Bit Organization x32
Density 64M
Internal Banks 4 Banks
Generation 9th Generation
Power Normal Power

GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clo ck cycle. Range of operating frequencies, programmable burs t length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Available Offers

Description Qty Datecode
K4S643232H-TI60 4,000 Get Quote
K4S643232H-TI60 100 4 Get Quote
K4S643232H-TI60 2,102 2007+ Get Quote
K4S643232H-TI60000 108 Get Quote
K4S643232H-TI60 20,000 2009+ Get Quote
K4S643232H-TI60000 148 Get Quote
K4S643232H-TI60 1,000 Get Quote
K4S643232H-TI60 1,127 2004+ Get Quote
K4S643232H-TI60000 480 Get Quote
K4S643232H-TI60 20,000 09+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
AS4C2M32S-6TIN TSOP2(86) 3.3 V 166 MHZ -40 C~+85 C
AS4C2M32SA-6TIN TSOP2(86) 3.3 V 166 MHZ -40 C~+85 C
AS4C2M32SA-6TINTR TSOP2(86) 3.3 V 166 MHZ -40 C~+85 C
EM638325TS-6IG TSOP2(86) 3.3 V 166 MHZ -40 C~+85 C
HY57V643220CLT-6I TSOP2(86) 3.3 V 166 MHZ -40 C~+85 C
HY57V643220CT-6HYNI TSOP2(86) 3.3 V 166 MHZ -40 C~+85 C
HY57V643220CT-6I TSOP2(86) 3.3 V 166 MHZ -40 C~+85 C
HY57V643220CT60I TSOP2(86) 3.3 V 166 MHZ -40 C~+85 C
HY57V643220DLTP-6I TSOP2(86) 3.3 V 166 MHZ -40 C~+85 C
HY57V643220DTP-6I TSOP2(86) 3.3 V 166 MHZ -40 C~+85 C