K4S643232H-TI70

Product Overview

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Manufacturer Part No K4S643232H-TI70
Brand SAMSUNG
Item SDRAM
Part No 2MX32 SD
Alternate Names K4S643232H-TI700
K4S643232HTI70000
K4S643232HTI70T00

Product Details

Package TSOP2(86)
Outpack TRAY
RoHS Leaded
Voltage 3.3 V
Temperature -40 C~+85 C
Speed 143 MHZ
Std. Pack Qty
Std. Carton
Number Of Words 2M
Bit Organization x32
Density 64M
Internal Banks 4 Banks
Generation 9th Generation
Power Normal Power

GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clo ck cycle. Range of operating frequencies, programmable burs t length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Available Offers

Description Qty Datecode
K4S643232H-TI70 6,918 Get Quote
K4S643232H-TI70 200 4 Get Quote
K4S643232H-TI70 1,488 2006+ Get Quote
K4S643232H-TI70 7,000 2009+ Get Quote
K4S643232H-TI70 1,488 Get Quote
K4S643232H-TI70 1,040 Get Quote
K4S643232H-TI70 20,000 2009+ Get Quote
K4S643232H-TI70 7,000 Get Quote
K4S643232H-TI70 20,000 09+ Get Quote
K4S643232H-TI70 20,000 2007+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
HY57V643220CLT7I TSOP2(86) 3.3 V 143 MHZ -40 C~+85 C
HY57V643220CT-7I TSOP2(86) 3.3 V 143 MHZ -40 C~+85 C
HY57V643220DLPT-7I TSOP2(86) 3.3 V 143 MHZ -40 C~+85 C
HY57V643220DLTP-7I TSOP2(86) 3.3 V 143 MHZ -40 C~+85 C
HY57V643220DSTP-7I TSOP2(86) 3.3 V 143 MHZ -40 C~+85 C
HY57V643220DTP-7I TSOP2(86) 3.3 V 143 MHZ -40 C~+85 C
HY57V643220TC-7I TSOP2(86) 3.3 V 143 MHZ -40 C~+85 C
HY57V653220BLTC-7I TSOP2(86) 3.3 V 143 MHZ -40 C~+85 C
HY57V653220BLTC-7I-A TSOP2(86) 3.3 V 143 MHZ -40 C~+85 C
HY57V653220BTC-7I TSOP2(86) 3.3 V 143 MHZ -40 C~+85 C