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Manufacturer Part No | K4T1G164QE-HIE6 |
Brand | SAMSUNG |
Item | DDR2 SDRAM |
Part No | 64MX16 DDR2 |
Alternate Names | K4T1G164QE-HIE6000 |
Package | FBGA-84 |
Outpack | |
RoHS | RoHS |
Voltage | 1.8 V |
Temperature | 0 C~+85 C |
Speed | 667 MBPS |
Std. Pack Qty | |
Std. Carton | |
Number Of Words | 64M |
Bit Organization | x16 |
Density | 1G |
Internal Banks | 8 Banks |
Generation | 6th Generation |
Power | Normal Power |
Description | Qty | Datecode | |
---|---|---|---|
K4T1G164QE-HIE6 | 4,000 | Get Quote | |
K4T1G164QE-HIE6 | 21,000 | Get Quote | |
K4T1G164QE-HIE6 | 5,660 | Get Quote | |
K4T1G164QE-HIE6 | 12,500 | Get Quote | |
K4T1G164QE-HIE6 | 9,600 | 14+ | Get Quote |
K4T1G164QE-HIE6 | 910 | 1980 | Get Quote |
K4T1G164QE-HIE6 | 2,240 | 10+ | Get Quote |
K4T1G164QE-HIE6000 | 1,280 | 2010+ | Get Quote |
K4T1G164QE-HIE6000 | 3,727 | Get Quote |
Description | Package | Voltage | Speed | Temperature |
---|---|---|---|---|
EM68C16CWQD-3H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
EM68C16CWVB-3H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T1G160BF-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T1G160C2C-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T1G160C2F-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T1G160C2FL-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T1G160CF-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18TC 1G160BF-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18TC1G1602F-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18TC1G160C2F-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |