K4T51163QI-HCE6

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4T51163QI-HCE6
Brand SAMSUNG
Item DDR2 SDRAM
Part No 32MX16 DDR2
Alternate Names K4T51163QI-HCE60
K4T51163QI-HCE600
K4T51163QI-HCE6000
K4T51163QI-HCE60000
K4T51163QI-HCE60CV
K4T51163QI-HCE60T00
K4T51163QI-HCE6T
K4T51163QI-HCE6T00
K4T51163QI-HCE6TCV

Product Details

Package FBGA-84
Outpack
RoHS RoHS
Voltage 1.8 V
Temperature 0 C~+85 C
Speed 667 MBPS
Std. Pack Qty
Std. Carton
Number Of Words 32M
Bit Organization x16
Density 512M
Internal Banks 4 Banks
Generation 10th Generation
Power Normal Power

Available Offers

Description Qty Datecode
K4T51163QI-HCE6 35 1134 Get Quote
K4T51163QI-HCE6 35 Get Quote
K4T51163QI-HCE6 868 1113+ Get Quote
K4T51163QI-HCE6 1,357 11+ Get Quote
K4T51163QI-HCE6 564 1113+ Get Quote
K4T51163QI-HCE6 1,094 1028+ Get Quote
K4T51163QI-HCE6 307 1143+ Get Quote
K4T51163QI-HCE6 394 1113+ Get Quote
K4T51163QI-HCE6 1,114 1028+ Get Quote
K4T51163QI-HCE6 793 11+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
EM68B16CWPA-3H FBGA-84 1.8 V 667 MBPS 0 C~+85 C
EM68B16CWPA-3H 512MB DDR2 FBGA-84 1.8 V 667 MBPS 0 C~+85 C
EM68B16CWQC-3H FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HY5PS121621AF-Y4 FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HY5PS121621AF-Y5 FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HY5PS121621AFP-Y4 FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HY5PS121621AFP-Y5 FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HY5PS121621BEP-Y5 FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HY5PS121621BFP-Y4 FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HY5PS121621BFP-Y5-C FBGA-84 1.8 V 667 MBPS 0 C~+85 C