K4ZAF325BM-HC14

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4ZAF325BM-HC14
Brand SAMSUNG
Item GDDR6 SDRAM
Part No 512MX32 GDDR6
Alternate Names K4ZAF325BM-HC14000

Product Details

Package FBGA-180
Outpack TRAY
RoHS RoHS
Voltage 1.35V
Temperature 0 C~+95 C
Speed 14 GB/S
Std. Pack Qty 1120
Std. Carton
Bit Organization x32
Internal Banks 16 Banks
Generation 1st Generation
Power Normal Power

Available Offers

Description Qty Datecode
K4ZAF325BM-HC14 0 Get Quote
K4ZAF325BM-HC14 10,080 Get Quote
K4ZAF325BM-HC14 20,000 2022+ Get Quote
K4ZAF325BM-HC14 25 Get Quote
K4ZAF325BM-HC14 30,240 Get Quote
K4ZAF325BM-HC14 40,000 Get Quote
K4ZAF325BM-HC14 6,000 19+ Get Quote
K4ZAF325BM-HC14 2,120 2022 Get Quote
K4ZAF325BM-HC14 10,080 2021+ Get Quote
K4ZAF325BM-HC14 60,000 Get Quote

Cross Reference

Description Package Voltage Speed Temperature
H56G42AS2DX014N FBGA-180 1.35V 14 GB/S 0 C~+95 C

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
H56G42AS6DX014 FBGA-180 1.35V 14 GB/S 0 C~+95 C
H56G42AS6DX014N FBGA-180 1.35V 14 GB/S 0 C~+95 C
K4ZAF325BM-HC18 FBGA-180 1.35V 14 GB/S 0 C~+95 C
MT61K512M32KPA-14:B FBGA-180 1.35V 14 GB/S 0 C~+95 C
MT61K512M32KPA-14C ES:B FBGA-180 1.35V 14 GB/S 0 C~+95 C