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Manufacturer Part No | K4ZAF325BM-HC14 |
Brand | SAMSUNG |
Item | GDDR6 SDRAM |
Part No | 512MX32 GDDR6 |
Alternate Names | K4ZAF325BM-HC14000 |
Package | FBGA-180 |
Outpack | TRAY |
RoHS | RoHS |
Voltage | 1.35V |
Temperature | 0 C~+95 C |
Speed | 14 GB/S |
Std. Pack Qty | 1120 |
Std. Carton | |
Bit Organization | x32 |
Internal Banks | 16 Banks |
Generation | 1st Generation |
Power | Normal Power |
Description | Qty | Datecode | |
---|---|---|---|
K4ZAF325BM-HC14 | 0 | Get Quote | |
K4ZAF325BM-HC14 | 10,080 | Get Quote | |
K4ZAF325BM-HC14 | 20,000 | 2022+ | Get Quote |
K4ZAF325BM-HC14 | 25 | Get Quote | |
K4ZAF325BM-HC14 | 30,240 | Get Quote | |
K4ZAF325BM-HC14 | 40,000 | Get Quote | |
K4ZAF325BM-HC14 | 6,000 | 19+ | Get Quote |
K4ZAF325BM-HC14 | 2,120 | 2022 | Get Quote |
K4ZAF325BM-HC14 | 10,080 | 2021+ | Get Quote |
K4ZAF325BM-HC14 | 60,000 | Get Quote |
Description | Package | Voltage | Speed | Temperature |
---|---|---|---|---|
H56G42AS2DX014N | FBGA-180 | 1.35V | 14 GB/S | 0 C~+95 C |
Description | Package | Voltage | Speed | Temperature |
---|---|---|---|---|
H56G42AS6DX014 | FBGA-180 | 1.35V | 14 GB/S | 0 C~+95 C |
H56G42AS6DX014N | FBGA-180 | 1.35V | 14 GB/S | 0 C~+95 C |
K4ZAF325BM-HC18 | FBGA-180 | 1.35V | 14 GB/S | 0 C~+95 C |
MT61K512M32KPA-14:B | FBGA-180 | 1.35V | 14 GB/S | 0 C~+95 C |
MT61K512M32KPA-14C ES:B | FBGA-180 | 1.35V | 14 GB/S | 0 C~+95 C |