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M29W160EB-70N6E 50,000 Enter Offer

M29W160EB-70N6E

Product Details

Package TSOP-48
Outpack TRAY
RoHS RoHS
Voltage 3.3 V
Temperature -40°C~+85°C
Speed 90 NS
Std. Pack Qty 576
Std. Carton 3456
Density 16M
Silicon Version E
Package TSOP(NA = 48-pin ,12 x 20mm and NB = 56-pin,14 x 20mm)
Functionality Security Bottom boot (bottom blocks protected)
Packaging ECOPACK package, standard tray packaging

General Description The M29W160ET/B (2Mb x8 or 1Mb x16) is a nonvolatile device that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7– 3.6V) supply. On power-up the memory defaults to read mode where it can be read in the same way as a ROM or EPROM. The device is divided into blocks that can be erased independently to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental PROGRAM or ERASE commands from modifying the memory. PROGRAM and ERASE commands are written to the command interface of the memory. An on-chip program/erase controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a PROGRAM or ERASE operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards. The blocks in the memory are asymmetrically arranged. The first or last 64KB have been divided into four additional blocks. The 16KB boot block can be used for a small initialization code to start the microprocessor, the two 8 KB parameter blocks can be used for parameter storage, and the remaining 32KB is a small main block where the application may be stored. CE#, OE#, and WE# signals control the bus operation. They enable simple connection to most microprocessors, often without additional logic. The device supplied with all the bits erased (set to 1).