MT29F4G08ABBDAH4:D

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No MT29F4G08ABBDAH4:D
Brand MICRON
Item FLASH-NAND
Part No 512MX8 NAND SLC
Alternate Names MT29F4G08ABBDAH4:D TR
MT29F4G08ABBDAH4D
MT29F4G08ABBDAH4DTR

Product Details

Package VFBGA-63
Outpack
RoHS RoHS
Voltage 1.8 V
Temperature 0 C~+70 C
Speed 25 NS
Std. Pack Qty
Std. Carton
Number Of Words 512M
Bit Organization x8
Density 4G
Production Status Production
Package Material Pb-free
Interface Async only
Level SLC
Generation Feature Set 4th set of device features (rev only if different)
Speed Grade Async only
Design Revision D
Package VFBGA(63-ball , 9 x 11 x 1.0)
Classification 1-1-1-1 (Die-nCE-RnB-IO Channels)

General Description Micron NAND Flash devices include an asynchronous data interface for high-performance I/O operations. These devices use a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#). This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign. A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND Flash die. A NAND Flash die is the minimum unit that can independently execute commands and report status. A NAND Flash die, in the ONFI specification, is referred to as a logical unit (LUN). There is at least one NAND Flash die per chip enable signal. For further details, see Device and Array Organization. This device has an internal 4-bit ECC that can be enabled using the GET/SET features. See Internal ECC and Spare Area Mapping for ECC for more information.

Available Offers

Description Qty Datecode
MT29F4G08ABBDAH4:D 11,329 Get Quote
MT29F4G08ABBDAH4:D 1,985 Get Quote
MT29F4G08ABBDAH4:D 1,992 1408+ Get Quote
MT29F4G08ABBDAH4:D 3,700 Get Quote
MT29F4G08ABBDAH4:D 1,922 1408+ Get Quote
MT29F4G08ABBDAH4:D 232 16+ Get Quote
MT29F4G08ABBDAH4:D 3,535 20+ Get Quote
MT29F4G08ABBDAH4:D 2,000 20+ Get Quote
MT29F4G08ABBDAH4:D 24,000 Get Quote
MT29F4G08ABBDAH4:D 1,000 Get Quote

Cross Reference

Description Package Voltage Speed Temperature
MT29F4G08ABBEAH4:E VFBGA-63 1.8 V 25 NS 0 C~+70 C

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
MT29F4G08ABBDAH4 VFBGA-63 1.8 V 25 NS 0 C~+70 C
MT29F4G08ABBDAH4ES:D VFBGA-63 1.8 V 25 NS 0 C~+70 C
MT29F4G08ABBDAH5:D VFBGA-63 1.8 V 25 NS 0 C~+70 C
MT29F4G08ABBDAHC VFBGA-63 1.8 V 25 NS 0 C~+70 C
MT29F4G08ABBDAHC:D VFBGA-63 1.8 V 25 NS 0 C~+70 C
MT29F4G08ABBDAHC:D TR VFBGA-63 1.8 V 25 NS 0 C~+70 C
MT29F4G08ABBDAHCD VFBGA-63 1.8 V 25 NS 0 C~+70 C
MT29F4G08ABBDAHCES:D VFBGA-63 1.8 V 25 NS 0 C~+70 C
MT29F4G08ABBEAH4 VFBGA-63 1.8 V 25 NS 0 C~+70 C
MT29F4G08ABBEAH4:ETR VFBGA-63 1.8 V 25 NS 0 C~+70 C