K4A8G165WC-BCWE
产品概述
图片仅供参考
| 制造商IC编号 | K4A8G165WC-BCWE |
| 厂牌 | SAMSUNG/三星 |
| IC 类别 | DDR4 SDRAM |
| IC代码 | 512MX16 DDR4 |
| 共通IC编号 | K4A8G165WC-BCWE000 |
| K4A8G165WC-BCWE0CV | |
| K4A8G165WC-BCWET00 | |
| K4A8G165WC-BCWETCV |
产品详情
| 脚位/封装 | FBGA-96 |
| 外包装 | TRAY |
| 无铅/环保 | 无铅/环保 |
| 电压(伏) | 1.2V |
| 温度规格 | 0 C~+85 C |
| 速度 | 3200 MBPS |
| 标准包装数量 | 1120 |
| 标准外箱 | |
| Number Of Words | 512M |
| Bit Organization | x16 |
| Density | 8Gb |
| Internal Banks | 16 Banks |
| Generation | 4th Generation |
| Power | Normal Power |
供应链有货
可替代IC编号
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| MT40A512M16LY-062E:E | FBGA-96 | 1.2V | 3200 MBPS | 0 C~+85 C |
FFFE/互通料号 (形式，腳位和功能对等)
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| H5AN8G6NCIR-XNIR | FBGA-96 | 1.2 V | 3200 MBPS | 0 C~+85 C |
| H5AN8G6NCJR-XNC | FBGA-96 | 1.2 V | 3200 MBPS | 0 C~+85 C |
| H5AN8G6NCJR-XNCR | FBGA-96 | 1.2 V | 3200 MBPS | 0 C~+85 C |
| H5AN8G6NDJR-XNC | FBGA-96 | 1.2 V | 3200 MBPS | 0 C~+85 C |
| H5AN8G6NDJR-XNCR | FBGA-96 | 1.2 V | 3200 MBPS | 0 C~+85 C |
| IS43QR16512A-062BL | FBGA-96 | 1.2V | 3200 MBPS | 0 C~+85 C |
| K4A8G165WB-BCWE | FBGA-96 | 1.2V | 3200 MBPS | 0 C~+85 C |
| K4A8G165WB-BCWE0CV | FBGA-96 | 1.2V | 3200 MBPS | 0 C~+85 C |
| K4A8G165WC-BCWE0CT | FBGA-96 | 1.2V | 3200 MBPS | 0 C~+85 C |
| K4A8G165WC-BCWETCT | FBGA-96 | 1.2V | 3200 MBPS | 0 C~+85 C |