K4T1G164QQ-HCE6

产品概述

IC Picture

图片仅供参考

制造商IC编号 K4T1G164QQ-HCE6
厂牌 SAMSUNG/三星
IC 类别 DDR2 SDRAM
IC代码 64MX16 DDR2
共通IC编号 K4T1G164QQ-HCE60
K4T1G164QQ-HCE600
K4T1G164QQ-HCE6000
K4T1G164QQ-HCE60JR
K4T1G164QQ-HCE6T
K4T1G164QQ-HCE6T00
K4T1G164QQ-HCE6T000

产品详情

脚位/封装 FBGA-84
外包装 TRAY
无铅/环保 无铅/环保
电压(伏) 1.8 V
温度规格 0 C~+85 C
速度 667 MBPS
标准包装数量 1280
标准外箱
Number Of Words 64M
Bit Organization x16
Density 1G
Internal Banks 8 Banks
Generation 17th Generation
Power Normal Power

供应链有货

IC 编号 数量 生产年份
K4T1G164QQ-HCE6 446 10+ 索取报价
K4T1G164QQ-HCE6 4,000 索取报价
K4T1G164QQ-HCE6 1,016 08+ 索取报价
K4T1G164QQ-HCE6 7,840 0922+10+ 索取报价
K4T1G164QQ-HCE6 966 10+ 索取报价
K4T1G164QQ-HCE6 8 索取报价
K4T1G164QQ-HCE6 248 索取报价
K4T1G164QQ-HCE6 12,500 索取报价
K4T1G164QQ-HCE6 11,350 16+ 索取报价
K4T1G164QQ-HCE6 8,960 2010+ 索取报价

FFFE/互通料号 (形式,腳位和功能对等)

IC 编号 脚位/封装 电压(伏) 速度 温度规格
EM68C16CWQD-3H FBGA-84 1.8 V 667 MBPS 0 C~+85 C
EM68C16CWVB-3H FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18T1G160BF-3S TFBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18T1G160C2C-3S TFBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18T1G160C2F-3S TFBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18T1G160C2FL-3S TFBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18T1G160CF-3S TFBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18TC 1G160BF-3S FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18TC1G1602F-3S FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18TC1G160C2F-3S FBGA-84 1.8 V 667 MBPS 0 C~+85 C