圖片僅供參考
製造商IC編號 | K4B1G1646I-BYMA |
廠牌 | SAMSUNG/三星 |
IC 類別 | DDR3L SDRAM |
IC代碼 | 64MX16 DDR3L |
共通IC編號 | K4B1G1646I-BYMA000 |
K4B1G1646I-BYMA0CV | |
K4B1G1646I-BYMAT00 | |
K4B1G1646I-BYMATCV |
脚位/封装 | FBGA-96 |
外包裝 | TRAY |
無鉛/環保 | 無鉛/環保 |
電壓(伏) | 1.35V |
溫度規格 | 0 C~+85 C |
速度 | 1866 MBPS |
標準包裝數量 | 1120 |
標準外箱 | |
Number Of Words | 64M |
Bit Organization | x16 |
Density | 1G |
Internal Banks | 8 Banks |
Generation | 10th Generation |
Power | Low VDD(1.35V) |
IC 編號 | 數量 | 生產年份 | |
---|---|---|---|
K4B1G1646I-BYMA | 640 | 索取報價 | |
K4B1G1646I-BYMA | 1,120 | 索取報價 | |
K4B1G1646I-BYMA | 22,400 | 22+ | 索取報價 |
K4B1G1646I-BYMA | 9,600 | 2021+ | 索取報價 |
K4B1G1646I-BYMA | 14,560 | 22+ | 索取報價 |
K4B1G1646I-BYMA0CV | 12,400 | 索取報價 | |
K4B1G1646I-BYMA | 10,000 | 22+ | 索取報價 |
K4B1G1646I-BYMA | 0 | 19+ | 索取報價 |
K4B1G1646I-BYMA | 7,459 | 19+ | 索取報價 |
K4B1G1646I-BYMA | 8,856 | 索取報價 |
IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
---|---|---|---|---|
IS43TR16640BL-107MBLI | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+85 C |
IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
---|---|---|---|---|
IS43TR16640BL-107MBL | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
IS43TR16640BL-107MBL-TR | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
IS43TR16640BL-107MBLC | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
IS43TR16640CL-107MB | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
IS43TR16640CL-107MBL | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
IS43TR16640CL-107MBL-TR | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
IS43TR16640CL-107MBLC | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
K4B1G1646-BYMA | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
K4B1G1646F-BYMA | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K64M16JT-107 ES:J | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |