圖片僅供參考
製造商IC編號 | K4B4G1646E-BYMA |
廠牌 | SAMSUNG/三星 |
IC 類別 | DDR3L SDRAM |
IC代碼 | 256MX16 DDR3L |
共通IC編號 | K4B4G1646E-BYMA0 |
K4B4G1646E-BYMA000 | |
K4B4G1646E-BYMA0CV | |
K4B4G1646E-BYMAT | |
K4B4G1646E-BYMAT00 | |
K4B4G1646E-BYMAT000 | |
K4B4G1646E-BYMATCV |
脚位/封装 | FBGA-96 |
外包裝 | TRAY |
無鉛/環保 | 無鉛/環保 |
電壓(伏) | 1.35V |
溫度規格 | 0 C~+85 C |
速度 | 1866 MBPS |
標準包裝數量 | 1120 |
標準外箱 | |
Number Of Words | 256M |
Bit Organization | x16 |
Density | 4G |
Internal Banks | 8 Banks |
Generation | 6th Generation |
Power | Low VDD(1.35V) |
IC 編號 | 數量 | 生產年份 | |
---|---|---|---|
K4B4G1646E-BYMA | 30,240 | 23+ | 索取報價 |
K4B4G1646E-BYMA | 22,400 | 索取報價 | |
K4B4G1646E-BYMA | 0 | 索取報價 | |
K4B4G1646E-BYMA | 8,960 | 索取報價 | |
K4B4G1646E-BYMA | 50,400 | 23+ | 索取報價 |
K4B4G1646E-BYMAT00 | 34,000 | 23+ | 索取報價 |
K4B4G1646E-BYMA | 50,000 | 索取報價 | |
K4B4G1646E-BYMA | 20,000 | 索取報價 | |
K4B4G1646E-BYMA | 10,000 | 索取報價 | |
K4B4G1646E-BYMA | 6,000 | 索取報價 |
IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
---|---|---|---|---|
A3T4GF40ABF-GMLPY | FBGA-96 | 1.35V | 1600 MBPS | 0 C~+95 C |
IM4G16D3FABG-125 | VFBGA | 1.35V | 1600(MT/S) | 0 C~+95 C |
MT41K256M16TW-107 | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K256M16TW-107:P TR | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
NT5CC256M16EP-DI | TFBGA-96 | 1.35V | 1600 MBPS | 0 C~+95 C |
IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
---|---|---|---|---|
EM6HE16EWAKG-10H | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G63AFR-RDA | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G63AFR-RDAR | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G63AFR-RDC | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G63CFR-RDA | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G63CFR-RDAR | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G63CFR-RDC | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G63EFR-PBA/RDA | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G63EFR-RDA | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G63EFR-RDA 2.9USD | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |