K4T1G164QE-HCE6

產品概述

IC Picture

圖片僅供參考

製造商IC編號 K4T1G164QE-HCE6
廠牌 SAMSUNG/三星
IC 類別 DDR2 SDRAM
IC代碼 64MX16 DDR2
共通IC編號 K4T1G164QE-HCE60
K4T1G164QE-HCE6000
K4T1G164QE-HCE60JR
K4T1G164QE-HCE6:
K4T1G164QE-HCE6T
K4T1G164QE-HCE6T00
K4T1G164QE-HCE6T000

產品詳情

脚位/封装 FBGA-84
外包裝
無鉛/環保 無鉛/環保
電壓(伏) 1.8 V
溫度規格 0 C~+85 C
速度 667 MBPS
標準包裝數量
標準外箱
Number Of Words 64M
Bit Organization x16
Density 1G
Internal Banks 8 Banks
Generation 6th Generation
Power Normal Power

供應鏈有貨

IC 編號 數量 生產年份
K4T1G164QE-HCE6 12,800 索取報價
K4T1G164QE-HCE6 922 索取報價
K4T1G164QE-HCE6 44 1007+ 索取報價
K4T1G164QE-HCE6 5,000 21+ 索取報價
K4T1G164QE-HCE6 20,000 09+ 索取報價
K4T1G164QE-HCE6 4 DC09 索取報價
K4T1G164QE-HCE6 4 9 索取報價
K4T1G164QE-HCE6 1,280 10+ 索取報價
K4T1G164QE-HCE6 294 2011 索取報價
K4T1G164QE-HCE6 12,500 索取報價

FFFE/互通料號 (形式,腳位和功能對等)

IC 編號 脚位/封装 電壓(伏) 速度 溫度規格
EM68C16CWQD-3H FBGA-84 1.8 V 667 MBPS 0 C~+85 C
EM68C16CWVB-3H FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18T1G160BF-3S TFBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18T1G160C2C-3S TFBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18T1G160C2F-3S TFBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18T1G160C2FL-3S TFBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18T1G160CF-3S TFBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18TC 1G160BF-3S FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18TC1G1602F-3S FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18TC1G160C2F-3S FBGA-84 1.8 V 667 MBPS 0 C~+85 C