| 脚位/封装 |
PLCC-32
|
| 外包裝 |
|
| 無鉛/環保 |
含鉛
|
| 電壓(伏) |
5.0 V
|
| 溫度規格 |
-40 C~+85 C
|
| 速度 |
90 NS
|
| 標準包裝數量 |
|
| 標準外箱 |
|
SUMMARY DESCRIPTION
The M29F040B is a 4 Mbit (512Kb x8) non-volatile
memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory
defaults to its Read mode where it can be read in
the same way as a ROM or EPROM. The
M29F040B is fully backward compatible with the
M29F040.
The memory is divided into blocks that can be
erased independently so it is possible to preserve
valid data while old data is erased. Each block can
be protected independently to prevent accidental
Program or Erase commands from modifying the
memory. Program and Erase commands are written to the Command Interface of the memory. An
on-chip Program/Erase Controller simplifies the
process of programming or erasing the memory
by taking care of all of the special operations that
are required to update the memory contents. The
end of a program or erase operation can be detected and any error conditions identified. The
command set required to control the memory is
consistent with JEDEC standards.
Chip Enable, Output Enable and Write Enable signals control the bus operation of the memory.
They allow simple connection to most microprocessors, often without additional logic.
The memory is offered in TSOP32 (8 x 20mm),
and PLCC32 packages. It is supplied with all the
bits erased (set to ‘1’).
