| W25Q128FVEIG |
WINBOND |
FLASH-QSPI-NOR |
12
|
FLASH-QSPI-NOR / 128MB SPI / WSON-8 / 133 MHZ / -40 C~+85 C / RoHS / 2.7V~3.6V |
| W25Q128JVSIQ |
WINBOND |
FLASH-QSPI-NOR |
68
|
FLASH-QSPI-NOR / 128MB SPI / SOIC-8 / 133 MHZ / -40 C~+85 C / RoHS / 2.7V~3.6V / TUBE / 90 pcs |
| W25Q64CVSSIG |
WINBOND |
FLASH-QSPI-NOR |
6
|
FLASH-QSPI-NOR / 64MB SPI / SOIC-8 / 133 MHZ / -40 C~+85 C / RoHS / 2.7V-3.6V / TUBE / EOL / 90 pcs |
| M95256-WMN6TP |
STM |
EEPROM-SPI |
98
|
EEPROM-SPI / 256KB SPI-EEPROM / SO-8 / 20 MHZ / -40 C~+85 C / RoHS / 2.5V~5.5V / TAPE ON REEL / 2500 pcs |
| M24C02-WMN6TP |
STM |
EEPROM |
88
|
EEPROM / 24C02 / SOIC-8 / 400 KHZ / -40 C~+85 C / RoHS / 2.5V~5.5V / TAPE ON REEL / 2500 pcs |
| K9F4G08U0B-PIB0(ON BOARD) |
SAMSUNG |
FLASH-NAND |
4.000
|
FLASH-NAND / 512MX8 NAND SLC / TSOP-48 / 25 NS / -40 C~+85 C / RoHS / 2.7V~3.6V / OTHER / 960 pcs |
| TC58NVG2S3ETA00 |
KIOXIA |
FLASH-NAND |
650
|
FLASH-NAND / 512MX8 NAND SLC / TSOP-48 / 25 NS / 0 C~+70 C / RoHS / 3.3 V / TRAY / EOL / 480 pcs 1.0 kg 36*16*5 cm |
| MX29F400CTTI-70G |
MACRONIX/MXIC |
FLASH-NOR |
34
|
FLASH-NOR / 29F400 TOP / TSOP-48 / 70 NS / -40 C~+85 C / RoHS / 5.0 V / TRAY / 960 pcs 1.0 kg 36*16*9 cm |
| MX25L12833FM2I-10G |
MACRONIX/MXIC |
FLASH-SPI |
15
|
FLASH-SPI / 128MB SPI / SOP-8 / 104 MHZ / -40 C~+85 C / RoHS / 3.3 V / TUBE / 92 pcs |
| KLM4G1YEMD-B031 |
SAMSUNG |
FLASH-EMMC |
12
|
FLASH-EMMC / 4GB EMMC / FBGA-153 / 52 MHZ / -25 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 1120 pcs |
| MT41J64M16JT-125:G |
MICRON |
DDR3 SDRAM |
100
|
DDR3 SDRAM / 64MX16 DDR3 / FBGA-96 / 1600 MBPS / 0 C~+95 C / RoHS / 1.5 V / TRAY / EOL / 1000 pcs |
| M24C08-FMN6TP |
STM |
EEPROM |
162
|
EEPROM / 24C08 / SO-8 / 400 KHZ / -40 C~+85 C / RoHS / 1.8V~5.5V / TAPE ON REEL |
| MTFC8GAKAJCN-1M WT |
MICRON |
FLASH-EMMC |
10
|
FLASH-EMMC / 8GB EMMC / FBGA-153 / 52 MHZ / -25 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 1520 pcs |
| K4T1G164QG-BCF7000 |
SAMSUNG |
DDR2 SDRAM |
200
|
DDR2 SDRAM / 64MX16 DDR2 / FBGA-84 / 800 MBPS / 0 C~+85 C / RoHS / 1.8 V / TRAY / 1280 pcs 2.0 kg 38*19*11 cm |
| AT24C08D-SSHM-T |
MICROCHIP |
EEPROM |
82
|
EEPROM / 24C08 / SOIC-8 / 100 KHZ / 0 C~+70 C / Leaded / 1.7V-3.6V / TAPE ON REEL |
| MT47H32M16HR-25E:G |
MICRON |
DDR2 SDRAM |
100
|
DDR2 SDRAM / 32MX16 DDR2 / FBGA-84 / 800 MBPS / 0 C~+85 C / RoHS / 1.8 V / TRAY / EOL / 1000 pcs |
| MT47H64M16NF-25:E:M |
MICRON |
DDR2 SDRAM |
100
|
DDR2 SDRAM / 64MX16 DDR2 / FBGA-84 / 800 MBPS / 0 C~+85 C / RoHS / 1.8 V / EOL |
| THGBMHG6C1LBAIL |
KIOXIA |
FLASH-EMMC |
10
|
FLASH-EMMC / 8GB EMMC / WFBGA-153 / 52 MHZ / -25 C~+85 C / RoHS / 2.7V~3.6V / TRAY / 760 pcs |
| H5PS1G63KFR-S6C |
SK HYNIX |
DDR2 SDRAM |
200
|
DDR2 SDRAM / 64MX16 DDR2 / FBGA-84 / 800 MBPS / 0 C~+95 C / RoHS / 1.8 V / TRAY / EOL |
| W971GG6SB25I |
WINBOND |
DDR2 SDRAM |
26
|
DDR2 SDRAM / 64MX16 DDR2 / FBGA-84 / 800 MBPS / -40 C~+95 C / RoHS / 1.8 V / TAPE ON REEL / 209 pcs |
| H5PS5162KFR-Y5C |
SK HYNIX |
DDR2 SDRAM |
200
|
DDR2 SDRAM / 32MX16 DDR2 / FBGA-84 / 333 MHZ / 0 C~+95 C / RoHS / 1.8 V / TRAY / EOL |
| K4T51163QQ-BCE6000 |
SAMSUNG |
DDR2 SDRAM |
200
|
DDR2 SDRAM / 32MX16 DDR2 / FBGA-84 / 667 MBPS / 0 C~+85 C / RoHS / 1.8 V / TRAY / EOL / 1280 pcs 2.0 kg 38*19*11 cm |
| 24AA08ISN |
MICROCHIP |
EEPROM |
282
|
EEPROM / 24C08 / SOIC-8 / 1 MHZ / -40 C~+85 C / RoHS / 1.70V~5.5V |
| MX25L12835EMI-10G |
MACRONIX/MXIC |
FLASH-SPI |
476
|
FLASH-SPI / 128MB SPI / SOP-16 / 104MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 44 pcs |
| IS42SM32160C-75BL |
ISSI |
SDRAM MOBILE |
826
|
SDRAM MOBILE / 16MX32 SD / FBGA-90 / 133 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / 240 pcs |