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Teilenummer Hersteller Produktkategorie Menge Memo
MT41K256M16TW-107 IT:P TR MICRON DDR3L SDRAM 498.000 DDR3L SDRAM / 256MX16 DDR3/L / FBGA-96 / 1866 MBPS / -40 C~+95 C / RoHS / 1.35V / TAPE ON REEL / 2000 pcs 1.85 kg 36*34*7 cm
GLS85LS1016B-M-C-FZJE-ND105 GREENLIANT NAND-DRIVE 1.593 NAND-DRIVE / 16GB SATA NANDRIVE / FBGA-145 / 6.0 GB/S / 0 C~+70 C / RoHS / 3.3 V / TRAY / EOL / 308 pcs
MT41K256M16TW-107:P TR MICRON DDR3L SDRAM 36.000 DDR3L SDRAM / 256MX16 DDR3/L / FBGA-96 / 1866 MBPS / 0 C~+85 C / RoHS / 1.35V / TAPE ON REEL / 2000 pcs
IS62WV2568BLL-55TLI-TR ISSI SRAM-ASYNC 54.000 SRAM-ASYNC / 256KX8 SRAM / TSOP-32 / 55 NS / -40 C~+85 C / RoHS / 1.65V-3.6V / TAPE ON REEL / 1500 pcs 1.5 kg 36*34*6 cm
IS42S32800J-7BLI ISSI SDRAM 2.490 SDRAM / 8MX32 SD / BGA-90 / 143 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / 2400 pcs 2.11 kg 37*9*15 cm
K4B2G1646F-BCNBT00 SAMSUNG DDR3 SDRAM 42.000 DDR3 SDRAM / 128MX16 DDR3 / FBGA-96 / 2133 MBPS / 0 C~+95 C / RoHS / 1.5 V / TAPE ON REEL / EOL / 2000 pcs 99.99 kg 38*36*7 cm
K4B2G1646F-BCNB0CV SAMSUNG DDR3 SDRAM 30.240 DDR3 SDRAM / 128MX16 DDR3 / FBGA-96 / 2133 MBPS / 0 C~+85 C / RoHS / 1.5 V / TRAY / EOL / 1120 pcs
K4B2G1646F-BCNB000 SAMSUNG DDR3 SDRAM 24.640 DDR3 SDRAM / 128MX16 DDR3 / FBGA-96 / 2133 MBPS / 0 C~+85 C / RoHS / 1.5 V / TRAY / EOL / 1120 pcs
KLMBG4GESD-C02PT18 SAMSUNG FLASH-EMMC 11.000 FLASH-EMMC / 32GB EMMC / FBGA-100 / 52MHZ / -40 C~+85 C / RoHS / 1.8V/3.3V / TAPE ON REEL / EOL / 1000 pcs
IS41C16100C-50KLI ISSI DRAM 705 DRAM / 1MX16 EDO / SOJ-42 / 50 NS / -40 C~+85 C / RoHS / 5.0 V / TUBE / EOL / 1600 pcs 4.0 kg 53*13*12 cm
K4B2G0846F-BYMAT00 SAMSUNG DDR3L SDRAM 26.000 DDR3L SDRAM / 256MX8 DDR3 / FBGA-78 / 1866 MBPS / 0 C~+85 C / RoHS / 1.35V / TAPE ON REEL / EOL / 2000 pcs
K4B1G1646I-BCNBTCV SAMSUNG DDR3 SDRAM 42.000 DDR3 SDRAM / 64MX16 DDR3 / FBGA-96 / 2133 MBPS / 0 C~+85 C / RoHS / 1.5 V / TAPE ON REEL / EOL / 2000 pcs
EN29F040A-70JIP EON/ FLASH-NOR 10 FLASH-NOR / 29F040 / PLCC / 70 NS / -40 C~+85 C / RoHS / 5.0 V
ESD9M5.0ST5G ON-SEMICONDUCTOR ESD SUPPRESSOR 2.592.000 ESD SUPPRESSOR / ESD9M5 / SOD-923-2 / 1 A / -55 C~+150 C / RoHS / 5.0 V / TAPE ON REEL / 8000 pcs
MT41K128M16JT-125IT:KTR MICRON DDR3L SDRAM 100.000 DDR3L SDRAM / 128MX16 DDR3L / FBGA-96 / 1600 MBPS / -40 C~+95 C / RoHS / 1.35V / TAPE ON REEL / 2000 pcs 1.3 kg 36*35*7 cm
AR1335CSSC11SMKA0-CP ON-SEMICONDUCTOR IMAGE SENSOR 3.785 IMAGE SENSOR / AR1335 / WFBGA-63 / RoHS / 1.8 V / TRAY / 3000 pcs
S34ML02G200TFI000 SKYHIGH FLASH-NAND 32.640 FLASH-NAND / 256MX8 NAND SLC / TSOP-48 / 25 NS / -40 C~+85 C / RoHS / 3.3 V / TRAY / 960 pcs
XA6SLX9-2FTG256Q0100 AMD XILINX FPGA 4.000 FPGA / 6SLX9 / FBGA-256 / 1080 MHZ / -40 C~+125 C / RoHS / 1.14V~1.26 / TAPE ON REEL / 1000 pcs
K4B2G1646F-BYMAT00 SAMSUNG DDR3L SDRAM 68.000 DDR3L SDRAM / 128MX16 DDR3L / FBGA-96 / 1866 MBPS / 0 C~+85 C / RoHS / 1.35V / TAPE ON REEL / 2000 pcs
IS42S32800B-6B ISSI SDRAM 5.974 SDRAM / 8MX32 SD / BGA-90 / 166 MHZ / 0 C~+85 C / Leaded / 3.3 V / TRAY
FS32K144HAT0MLHT NXP MCU-ARM 3.195 MCU-ARM / 32K144 / LQFP-64 / 80 MHZ / -40 C~+125 C / RoHS / 2.7V~5.5V / TRAY / 800 pcs
K4X1G163PQ-FGC3000 SAMSUNG LPDDR1 MOBILE 3.158 LPDDR1 MOBILE / 64MX16 LPDDR1 / FBGA-60 / 133 MHZ / -25 C~+85 C / RoHS / 1.8 V / TRAY / EOL / 1120 pcs 2.3 kg 19*38*12 cm
STM32F405RGT6 STM MCU 5.760 MCU / 32F405 / LQFP-64 / 168 MHZ / -40 C~+85 C / RoHS / 1.8V~3.6V / TRAY / 960 pcs 1.0 kg 39*17*7 cm
LPC1765FBD100K NXP MCU-ARM 17.300 MCU-ARM / LPC1765 / LQFP-100 / 120 MHZ / -40 C~+85 C / RoHS / 2.4V~3.6V / TRAY / 450 pcs
STTH8R04DI STM RECOVERY DIODE 9.000 RECOVERY DIODE / 8R04 / TO-220-3 / 120 A / -40 C~+175 C / RoHS / 400 V / TUBE / 1000 pcs