| MT41K256M16TW-107:P TR |
MICRON |
DDR3L SDRAM |
86.000
|
DDR3L SDRAM / 256MX16 DDR3/L / FBGA-96 / 1866 MBPS / 0 C~+85 C / RoHS / 1.35V / TAPE ON REEL / 2000 pcs |
| IS42S32800B-6B |
ISSI |
SDRAM |
5.974
|
SDRAM / 8MX32 SD / BGA-90 / 166 MHZ / 0 C~+85 C / Leaded / 3.3 V / TRAY |
| FS32K144HAT0MLHT |
NXP |
MCU-ARM |
3.195
|
MCU-ARM / 32K144 / LQFP-64 / 80 MHZ / -40 C~+125 C / RoHS / 2.7V~5.5V / TRAY / 800 pcs |
| AR1335CSSC11SMKA0-CP |
ON-SEMICONDUCTOR |
IMAGE SENSOR |
4.485
|
IMAGE SENSOR / AR1335 / WFBGA-63 / RoHS / 1.8 V / TAPE ON REEL / 3000 pcs |
| K4X1G163PQ-FGC3000 |
SAMSUNG |
LPDDR1 MOBILE |
3.158
|
LPDDR1 MOBILE / 64MX16 LPDDR1 / FBGA-60 / 133 MHZ / -25 C~+85 C / RoHS / 1.8 V / TRAY / EOL / 1120 pcs 2.3 kg 19*38*12 cm |
| MC9S08GT32ACFBE |
NXP |
MCU |
2.356
|
MCU / 9S08 / QFN-32 / 40 MHZ / -40 C~+85 C / RoHS / 2.7V~5.5V / TRAY / 480 pcs |
| STM32F405RGT6 |
STM |
MCU |
5.760
|
MCU / 32F405 / LQFP-64 / 168 MHZ / -40 C~+85 C / RoHS / 1.8V~3.6V / TRAY / 960 pcs 1.0 kg 39*17*7 cm |
| LPC1765FBD100K |
NXP |
MCU-ARM |
17.300
|
MCU-ARM / LPC1765 / LQFP-100 / 120 MHZ / -40 C~+85 C / RoHS / 2.4V~3.6V / TRAY / 450 pcs |
| ST72F521AR9TCS |
STM |
MCU |
800
|
MCU / 72F521 / LQFP-64 / 8 MHZ / -40 C~+125 C / RoHS / 4.5V~5.5V / TRAY / EOL / 800 pcs |
| MAX202ESE T |
ANALOG DEVICES/ADI |
INTERFACE |
7.500
|
INTERFACE / MAX202 / SO-16 / 15 MA / -40 C~+85 C / RoHS / 5.0 V / TAPE ON REEL / 2500 pcs |
| STTH8R04DI |
STM |
RECOVERY DIODE |
9.000
|
RECOVERY DIODE / 8R04 / TO-220-3 / 120 A / -40 C~+175 C / RoHS / 400 V / TUBE / 1000 pcs |
| AT45DB041E-SSHN-T |
RENESAS |
FLASH-SPI |
32.000
|
FLASH-SPI / 4MB SPI / SOIC-8 / 85 MHZ / -40 C~+85 C / RoHS / 1.60V~3.6V / TAPE ON REEL / 4000 pcs |
| IS42S32160F-7TL |
ISSI |
SDRAM |
627
|
SDRAM / 16MX32 SD / TSOP2(86) / 143 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / 1080 pcs |
| LPC1768FBD100K |
NXP |
MCU-ARM |
9.420
|
MCU-ARM / LPC1768 / LQFP-100 / 120 MHZ / -40 C~+85 C / RoHS / 2.4V~3.6V / TRAY / 450 pcs 1.0 kg 36*16*5 cm |
| H5PS5182KFR-Y5C |
SK HYNIX |
DDR2 SDRAM |
197.129
|
DDR2 SDRAM / 64MX8 DDR2 / FBGA-60 / 333 MHZ / 0 C~+95 C / RoHS / 1.8 V / TRAY / 1600 pcs 2.0 kg 9*11*37 cm |
| IS41C16100C-50KLI |
ISSI |
DRAM |
712
|
DRAM / 1MX16 EDO / SOJ-42 / 50 NS / -40 C~+85 C / RoHS / 5.0 V / TUBE / EOL / 1600 pcs 4.0 kg 53*13*12 cm |
| K4B1G1646I-BCNBTCV |
SAMSUNG |
DDR3 SDRAM |
52.000
|
DDR3 SDRAM / 64MX16 DDR3 / FBGA-96 / 2133 MBPS / 0 C~+85 C / RoHS / 1.5 V / TAPE ON REEL / EOL / 2000 pcs |
| K4S560832N-LC75000 |
SAMSUNG |
SDRAM |
2.522
|
SDRAM / 32MX8 SD / TSOP2(54) / 133 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 960 pcs 2.0 kg 38*19*11 cm |
| MX25L6433FM2I-08G-TR |
MACRONIX/MXIC |
FLASH-SPI |
18.000
|
FLASH-SPI / 64MB SPI / SOP-8 / 133 MHZ / -40 C~+85 C / RoHS / 3.3 V / TAPE ON REEL / 2000 pcs 0.0 kg 39*36*6 cm |
| K4A8G165WC-BIWE0CV |
SAMSUNG |
DDR4 SDRAM |
1.020
|
DDR4 SDRAM / 512MX16 DDR4 / FBGA-96 / 2666 MBPS / -40 C~+85 C / RoHS / 1.2V / TRAY / 1120 pcs 2.56 kg 38*19*11* cm |
| MT46V64M4P-6T:G |
MICRON |
DDR1 SDRAM |
14.214
|
DDR1 SDRAM / 64MX4 DDR1 / TSOP-66 / 167 MHZ / 0 C~+85 C / RoHS / 2.5 V / TAPE ON REEL / 1000 pcs 1.6 kg 37*35*8 cm |
| MT46V8M16TG-6T:D |
MICRON |
DDR1 SDRAM |
10.970
|
DDR1 SDRAM / 8MX16 DDR1 / TSOP-66 / 167 MHZ / 0 C~+85 C / Leaded / 2.5 V / TRAY / 1000 pcs 2.67 kg 37*19*12 cm |
| MT46V8M16TG-6T:D TR |
MICRON |
DDR1 SDRAM |
29.000
|
DDR1 SDRAM / 8MX16 DDR1 / TSOP-66 / 166 MHZ / 0 C~+85 C / Leaded / 2.5 V / TAPE ON REEL / EOL / 1000 pcs 1.54 kg 37*35*8 cm |
| K4A4G165WE-BIRC0CV |
SAMSUNG |
DDR4 SDRAM |
3.358
|
DDR4 SDRAM / 256MX16 DDR4 / FBGA-96 / 2400 MBPS / -40 C~+85 C / RoHS / 1.2V / TRAY / 1120 pcs |
| LM7301SN1T1G |
ON-SEMICONDUCTOR |
OP AMPS |
3.000
|
OP AMPS / LM7301 / SOT-23-5 / 4 MHZ / -40 C~+85 C / RoHS / 1.8 V / TAPE ON REEL / 3000 pcs |