| M27C200170XF1(ROHS) |
STM |
EPROM |
1,760
|
EPROM / 27C020 / CDIP / (-40 C TO +125 C)E1 / RoHS / 5 V / TUBE / 240 pcs 3.11 kg 55*9*7 cm |
| K4B1G1646I-BCK0000 |
SAMSUNG |
DDR3 SDRAM |
4,480
|
DDR3 SDRAM / 64MX16 DDR3 / FBGA-96 / 800 MHZ / 0 C~+95 C / RoHS / 1.5 V / TRAY / 1120 pcs 2.0 kg 38*19*11 cm |
| MX25L6406EM2I-12G |
MACRONIX/MXIC |
FLASH-SPI |
4,772
|
FLASH-SPI / 25FL064 / SOIC / 86 MHZ / -40 ~+85 C(IND) / RoHS / 2.7V-3.6V / TUBE / 2024 pcs 1.6 kg 61*16*10 cm |
| SD-C04G2T2 |
TOSHIBA |
MEMORY CARD-MICRO-SDHC |
10,200
|
MEMORY CARD-MICRO-SDHC / 4GB MICRO-SD / -25 C~+85 C(WIR / RoHS / EOL / 600 pcs 1.0 kg 36*16*5 cm |
| K9F2G08U0D-SIB0000 |
SAMSUNG |
FLASH-NAND |
960
|
FLASH-NAND / 256MX8 NAND SLC / TSOP / -40 ~+85 C(IND) / RoHS / 2.7V-3.6V / TRAY / EOL / 960 pcs 2.0 kg 39*19*11 cm |
| KLM4G1YEMD-B031 |
SAMSUNG |
FLASH-EMMC |
12
|
FLASH-EMMC / 4GB EMMC / FBGA / RoHS / TRAY / EOL / 1120 pcs |
| MT41J64M16JT-125:G |
MICRON |
DDR3 SDRAM |
100
|
DDR3 SDRAM / 64MX16 DDR3 / FBGA / 1600(MT/S) / 0 C~+95 C / RoHS / 1.5 V / TRAY / 1000 pcs |
| S29PL064J70BFI122 |
CYPRESS |
FLASH-NOR |
291
|
FLASH-NOR / 29PL064 / FBGA / 70 NS / -40 ~+85 C(IND) / RoHS / 3.0V / TAPE ON REEL |
| M24C08-FMN6TP |
STM |
EEPROM |
162
|
EEPROM / 24C08 / SO-8 / -40 ~+85 C(IND) / Leaded / 1.8 TO 5.5 / TAPE ON REEL |
| MTFC8GAKAJCN-1M WT |
MICRON |
FLASH-EMMC |
10
|
FLASH-EMMC / 8GB EMMC / VFBGA / -25 C~+85 C(WIR / RoHS / 2.7V-3.6V / TRAY / 1520 pcs |
| K4T1G164QG-BCF7000 |
SAMSUNG |
DDR2 SDRAM |
200
|
DDR2 SDRAM / 64MX16 DDR2 / FBGA-84 / 800(MT/S) / 0 C~+85 C / RoHS / 1.8 V / TRAY / 1280 pcs |
| K4T1G164QJ-BCE7T00 |
SAMSUNG |
DDR2 SDRAM |
4,665
|
DDR2 SDRAM / 64MX16 DDR2 / FBGA-84 / 800(MT/S) / 0 C~+85 C / RoHS / 1.8 V / TAPE ON REEL |
| AT24C08D-SSHM-T |
MICROCHIP |
EEPROM |
82
|
EEPROM / 24C08 / SOIC / Leaded / 1.71V-3.6V / TAPE ON REEL |
| MT47H32M16HR-25E:G |
MICRON |
DDR2 SDRAM |
100
|
DDR2 SDRAM / 32MX16 DDR2 / FBGA-84 / 800(MT/S) / 0 C~+85 C / RoHS / 1.8 V / TRAY / EOL / 1000 pcs |
| MT47H64M16NF-25:E:M |
MICRON |
DDR2 SDRAM |
100
|
DDR2 SDRAM / 64MX16 DDR2 / FBGA-84 / 800(MT/S) / 0 C~+85 C / RoHS / 1.8 V |
| THGBMHG6C1LBAIL |
TOSHIBA |
FLASH-EMMC |
10
|
FLASH-EMMC / 8GB EMMC / P-WFBGA153 / 52 MHZ / -25 C~+85 C(WIR / RoHS / 2.7V-3.6V / TRAY / 760 pcs |
| H5PS1G63KFR-S6C |
SK HYNIX |
DDR2 SDRAM |
200
|
DDR2 SDRAM / 64MX16 DDR2 / FBGA / 0 C~+85 C / RoHS / 1.8 V / TRAY / EOL |
| W971GG6SB25I |
WINBOND |
DDR2 SDRAM |
26
|
DDR2 SDRAM / 64MX16 DDR2 / WBGA / Leaded / 1.8 V |
| H5PS5162KFR-Y5C |
SK HYNIX |
DDR2 SDRAM |
200
|
DDR2 SDRAM / 32MX16 DDR2 / FBGA / (-40 C TO +125 C)E1 / RoHS / 1.8 V / TRAY / EOL |
| K4T51163QQ-BCE6000 |
SAMSUNG |
DDR2 SDRAM |
200
|
DDR2 SDRAM / 32MX16 DDR2 / FBGA / DDR2-667-333 MHZ / 0 C~+85 C / RoHS / 1.8 V / TRAY / EOL / 1280 pcs |
| W25Q32FVSSIG |
WINBOND |
FLASH-SPI |
3,000
|
FLASH-SPI / 25Q32 / SOIC-8(208MM) / -40 C~+85 C / RoHS / 2.7V-3.6V / TUBE / 90 pcs |
| 24AA08ISN |
MICROCHIP |
EEPROM |
282
|
EEPROM / 24C08 / SOIC-8 / RoHS / 1.7V |
| MX25L12835EMI-10G |
MACRONIX/MXIC |
FLASH-SPI |
476
|
FLASH-SPI / 25Q128 / SOIC / 104 MHZ / -40 ~+85 C(IND) / RoHS / 2.7V-3.6V / TRAY / EOL / 44 pcs |
| MX25L12845EZNI-10G |
MACRONIX/MXIC |
FLASH-SPI |
4,260
|
FLASH-SPI / 25L12845 / WSON / 104 MHZ / -40 ~+85 C(IND) / RoHS / 2.7V-3.6V / TRAY / 4800 pcs 2.0 kg 36*16*9 cm |
| M45PE80VMP6TG |
MICRON |
FLASH-SPI |
3,512
|
FLASH-SPI / 45PE80 / VDFPN / -40 ~+85 C(IND) / RoHS / 2.7V-3.6V / TAPE ON REEL / EOL / 4000 pcs |