| K4T51163QN-BCE7000 |
SAMSUNG |
DDR2 SDRAM |
31,881
|
DDR2 SDRAM / 32MX16 DDR2 / FBGA-84 / 400 MHZ / 0 C~+95 C / RoHS / 1.8 V / TRAY / EOL / 1280 pcs 2.0 kg 38*19*11 cm |
| M27C801-100K1 (ROHS) |
STM |
OTPROM |
4,752
|
OTPROM / 27C080 / PLCC-32 / 80 MHZ / 0 C~+70 C / RoHS / 5.0 V / TUBE / EOL / 320 pcs |
| MX30LF1G18AC-TI |
MACRONIX/MXIC |
FLASH-NAND |
68,170
|
FLASH-NAND / 128MX8 NAND SLC / TSOP-48 / 25 NS / -40 C~+85 C / RoHS / 3.3 V / TRAY / 960 pcs 2.08 kg 38*16*9 cm |
| IS45S32160F-6TLA2 |
ISSI |
SDRAM |
159
|
SDRAM / 16MX32 SD / TSOP2 / 166 MHZ / -40 C~+105 C / RoHS / 3.3 V |
| IS43LR32100D-6BLI |
ISSI |
LPDDR1 MOBILE |
1,425
|
LPDDR1 MOBILE / 1MX32 LPDDR1 / FBGA-90 / 166 MHZ / -40 C~+95 C / RoHS / 1.8 V / TRAY |
| IS43R16160D |
ISSI |
DDR1 SDRAM |
1,050
|
DDR1 SDRAM / 16MX16 DDR1 / 0 C~+85 C / Leaded / 2.5 V |
| IS43LD16160A-25BLI |
ISSI |
LPDDR2 MOBILE |
4,012
|
LPDDR2 MOBILE / 16MX16 LPDDR2 / FBGA-168 / 400 MHZ / -40 C~+95 C / RoHS / 1.2/1.8V / TRAY |
| K4T1G084QJ-BCE7000 |
SAMSUNG |
DDR2 SDRAM |
15,447
|
DDR2 SDRAM / 128MX8 DDR2 / FBGA-60 / 400 MHZ / 0 C~+95 C / RoHS / 1.8 V / TRAY / EOL / 1280 pcs 2.0 kg 38*19*11 cm |
| IS25LP064D-JBLE-TR |
ISSI |
FLASH-SPI |
9,000
|
FLASH-SPI / 64MB SPI / SOIC-8 / 133 MHZ / -40 C~+105 C / RoHS / 2.3V-3.6V / TAPE ON REEL / 2000 pcs |
| TMS320C6670ACYP2 |
TEXAS/TI |
DSP |
17
|
DSP / 320C6670 / FCBGA-841 / 1 GHZ / -40 C~+100 C / RoHS / 1.0 V |
| SN65LVDS180D |
TEXAS/TI |
TRANSCEIVER |
500
|
TRANSCEIVER / 65LVDS180 / SOIC-14 / 150 MB/S / -40 C~+85 C / RoHS / 3.0V~3.6V |
| SN65LVDM1677DGG |
TEXAS/TI |
TRANSCEIVER |
816
|
TRANSCEIVER / 65LVDM1677 / TSSOP-64 / 200 MBPS / -40 C~+85 C / RoHS / 3.0V~3.6V |
| ATXMEGA16E5-AU |
MICROCHIP |
MCU |
975
|
MCU / ATXMEGA16 / TQFP-32 / 32 MHZ / -40 C~+85 C / RoHS / 1.60V~3.6V |
| IS42S32400F-7BLI |
ISSI |
SDRAM |
8,098
|
SDRAM / 4MX32 SD / FBGA-90 / 143 MHZ / -40 C~+95 C / RoHS / 3.3 V / TRAY / 2400 pcs 2.0 kg 37*16*9 cm |
| S34ML04G100TFI000 |
SKYHIGH |
FLASH-NAND |
21,984
|
FLASH-NAND / 512MX8 NAND SLC / TSOP-48 / 25 NS / -40 C~+85 C / RoHS / 3.3 V / TRAY / 960 pcs 2.5 kg 40*19*12 cm |
| M29W320DB70N6E |
MICRON |
FLASH-NOR |
3,889
|
FLASH-NOR / 29LV320 BOTTOM / TSOP-48 / 90 NS / -40 C~+85 C / RoHS / 2.7V~3.6V / TRAY / EOL / 576 pcs |
| EDS1232FASE-75TT-E |
MICRON |
SDRAM |
50,760
|
SDRAM / 4MX32 SD / FBGA-90 / 133 MHZ / -20 ~+85 / RoHS / 3.3 V / TRAY / 1045 pcs 1.2 kg 37*17.5*8 cm |
| MX30LF1G18AC-XKIT/R |
MACRONIX/MXIC |
FLASH-NAND |
12,000
|
FLASH-NAND / 128MX8 NAND SLC / VFBGA-63 / 25 NS / -40 C~+85 C / RoHS / 2.7V~3.6V / TAPE ON REEL / 3000 pcs 1.0 kg 39*36*6 cm |
| IS45R16160D-75BLA2 |
ISSI |
SDRAM MOBILE |
79,585
|
SDRAM MOBILE / 16MX16 SD / FBGA-54 / 133 MHZ / -40 C~+105 C / RoHS / 2.5 V / TRAY |
| IS45VM16800E-75BLA2 |
ISSI |
SDRAM MOBILE |
41,370
|
SDRAM MOBILE / 8MX16 SD / FBGA-54 / 133 MHZ / -40 C~+105 C / RoHS / 1.8 V / TRAY |
| IS42S16400F-6BLI |
ISSI |
SDRAM |
1,872
|
SDRAM / 4MX16 SD / FBGA-54 / 166 MHZ / -40 C~+95 C / RoHS / 3.3 V / TRAY / EOL |
| IS46LD32160A-18BLA2 |
ISSI |
LPDDR2 MOBILE |
213
|
LPDDR2 MOBILE / 16MX32 LPDDR2 / FBGA-134 / 533 MHZ / -40 C~+105 C / RoHS / 1.14V~1.95 / TRAY |
| IS42SM32400H-6BLI |
ISSI |
SDRAM MOBILE |
49
|
SDRAM MOBILE / 4MX32 SD / FBGA-90 / 166 MHZ / -40 C~+95 C / RoHS / 3.3 V / TRAY |
| IS46LR32800H-5BLA2 |
ISSI |
LPDDR1 MOBILE |
2,326
|
LPDDR1 MOBILE / 8MX32 LPDDR1 / FBGA-90 / 200 MHZ / -40 C~+105 C / RoHS / 1.8 V |
| IS42VM16320D-6BLI |
ISSI |
SDRAM MOBILE |
801
|
SDRAM MOBILE / 32MX16 SD / FBGA-54 / 166 MHZ / -40 C~+95 C / RoHS / 1.8 V / TRAY |