| IS42S16400F-6BLI |
ISSI/矽成 |
SDRAM |
1,872
|
SDRAM / 4MX16 SD / FBGA-54 / 166 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 348 pcs |
| IS42S32800J-6RTLI |
ISSI/矽成 |
SDRAM |
3,405
|
SDRAM / 8MX32 SD / TSOP2(86) / 166 MHZ / -40 C~+95 C / RoHS / 3.3 V |
| IS42S16320B-75ETLI |
ISSI/矽成 |
SDRAM |
886
|
SDRAM / 32MX16 SD / TSOP2(54) / 133 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 1080 pcs |
| IS43TR16128A -125KBLI |
ISSI/矽成 |
DDR3 SDRAM |
907
|
DDR3 SDRAM / 128MX16 DDR3 / FBGA-96 / 1600 MBPS / -40 C~+85 C / RoHS / 1.5 V / TRAY / EOL / 1900 pcs |
| IS46DR16320D-3DBA2 |
ISSI/矽成 |
DDR2 SDRAM |
1,356
|
DDR2 SDRAM / 32MX16 DDR2 / FBGA-84 / 667 MBPS / -40 C~+105 C / Leaded / 1.8 V / TRAY |
| IS43R16320E-6BL |
ISSI/矽成 |
DDR1 SDRAM |
1,194
|
DDR1 SDRAM / 32MX16 DDR1 / BGA-60 / 166 MHZ / 0 C~+85 C / RoHS / 2.5 V / TRAY / EOL |
| AT27BV010-12VC |
MICROCHIP/微芯 |
OTPROM |
10,920
|
OTPROM / 27BV010 / VSOP-32 / 120 NS / 0 C~+70 C / Leaded / 2.7V~3.6V / TRAY / 2080 pcs |
| IS42S16160D-75EBLI |
ISSI/矽成 |
SDRAM |
6,177
|
SDRAM / 16MX16 SD / BGA-54 / 133 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / EOL |
| EDS1216GABH-10-E |
MICRON/美光 |
SDRAM |
14,997
|
SDRAM / 8MX16 SD / FBGA-54 / 100 MHZ / 0 C~+70 C / RoHS / 3.3 V / TRAY / EOL / 1595 pcs 37*18*7 cm |
| K4T51083QN-BCE7000 |
SAMSUNG/三星 |
DDR2 SDRAM |
35,778
|
DDR2 SDRAM / 64MX8 DDR2 / FBGA-60 / 800 MBPS / 0 C~+95 C / RoHS / 1.8 V / TRAY / EOL / 1280 pcs 2.0 kg 38*19*11 cm |
| H5PS5182KFR-Y5C |
SK HYNIX/海力士 |
DDR2 SDRAM |
197,129
|
DDR2 SDRAM / 64MX8 DDR2 / FBGA-60 / 333 MHZ / 0 C~+95 C / RoHS / 1.8 V / TRAY / 1600 pcs 2.0 kg 9*11*37 cm |
| M12L128168A-6TG |
ESMT/EMP/晶豪 |
SDRAM |
1,080
|
SDRAM / 8MX16 SD / TSOP2(54) / 166 MHZ / 0 C~+70 C / RoHS / 3.3 V / TRAY / 1080 pcs 2.18 kg 37*16*9 cm |
| EN29LV320T-70TCP |
EON/宜扬 |
FLASH-NOR |
576
|
FLASH-NOR / 32MB PARALLEL / TSOP-48 / 70 NS / 0 C~+70 C / RoHS / 2.7V~3.6V / TRAY / 576 pcs |
| MX30LF1G18AC-XKIT/R |
MACRONIX/MXIC/旺宏 |
FLASH-NAND |
6,000
|
FLASH-NAND / 128MX8 NAND SLC / VFBGA-63 / 25 NS / -40 C~+85 C / RoHS / 2.7V~3.6V / TAPE ON REEL / 3000 pcs 1.0 kg 39*36*6 cm |
| IS42S16800J-7TL |
ISSI/矽成 |
SDRAM |
6,708
|
SDRAM / 8MX16 SD / TSOP2(54) / 143 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / 1080 pcs |
| MX30UF1G16AC-XKI TR |
MACRONIX/MXIC/旺宏 |
FLASH-NAND |
6,000
|
FLASH-NAND / 64MX16 NAND SLC / FBGA-63 / 25NS / -40 C~+85 C / RoHS / 1.70-1.95V / TAPE ON REEL / 3000 pcs 1.0 kg 39*36*6 cm |
| MX52LM04A11XSI |
MACRONIX/MXIC/旺宏 |
FLASH-EMMC |
9,120
|
FLASH-EMMC / 4GB EMMC / FBGA-153 / 52 MHZ / -40 C~+85 C / RoHS / 2.7V~3.6V / TRAY / 1520 pcs |
| IS43R16320F-5TL |
ISSI/矽成 |
DDR1 SDRAM |
2,208
|
DDR1 SDRAM / 32MX16 DDR1 / TSOP2(66) / 200 MHZ / 0 C~+85 C / RoHS / 2.5 V / TRAY / 108 pcs |
| IS43R16320E-5TL |
ISSI/矽成 |
DDR1 SDRAM |
5,035
|
DDR1 SDRAM / 32MX16 DDR1 / TSOP2(66) / 200 MHZ / 0 C~+85 C / RoHS / 2.5 V / TRAY / EOL |
| IS43R16320E-6TL |
ISSI/矽成 |
DDR1 SDRAM |
6,862
|
DDR1 SDRAM / 32MX16 DDR1 / TSOP2(66) / 166 MHZ / 0 C~+85 C / RoHS / 2.5 V / TRAY / EOL / 1080 pcs |
| IS46LR32320B-6BLA2 |
ISSI/矽成 |
LPDDR1 MOBILE |
358
|
LPDDR1 MOBILE / 32MX32 LPDDR1 / FBGA-90 / 166 MHZ / -40 C~+105 C / RoHS / 1.8 V / TRAY |
| K4X1G323PC-8GC6000 |
SAMSUNG/三星 |
LPDDR1 MOBILE |
1,232
|
LPDDR1 MOBILE / 32MX32 LPDDR1 / FBGA-90 / 166 MHZ / -25 C~+85 C / RoHS / 1.8 V / TRAY / EOL / 1120 pcs |
| IS43LR32320B-6BLI |
ISSI/矽成 |
LPDDR1 MOBILE |
13,378
|
LPDDR1 MOBILE / 32MX32 LPDDR1 / FBGA-90 / 166 MHZ / -40 C~+85 C / RoHS / 1.8 V / TRAY |
| IS46LR32320B-5BLA1 |
ISSI/矽成 |
LPDDR1 MOBILE |
15,019
|
LPDDR1 MOBILE / 32MX32 LPDDR1 / FBGA-90 / 200 MHZ / -40 C~+85 C / RoHS / 1.8 V / TRAY |
| IS43DR81280B-3DBI |
ISSI/矽成 |
DDR2 SDRAM |
10,822
|
DDR2 SDRAM / 128MX8 DDR2 / BGA-60 / 667 MBPS / -40 C~+85 C / Leaded / 1.8 V |