| LPC1768FBD100K |
NXP/恩智浦 |
MCU-ARM |
9,900
|
MCU-ARM / LPC1768 / LQFP-100 / 120 MHZ / -40 C~+85 C / RoHS / 2.4V~3.6V / TRAY / 450 pcs 1.0 kg 36*16*5 cm |
| MX30LF1G18AC-TI TR |
MACRONIX/MXIC/旺宏 |
FLASH-NAND |
12,000
|
FLASH-NAND / 128MX8 NAND SLC / TSOP-48 / 1 MHZ / -40 C~+85 C / RoHS / 3.3 V / TAPE ON REEL / 1500 pcs 1.7 kg 39*36*6 cm |
| IS42SM16800H-75BLI |
ISSI/矽成 |
SDRAM MOBILE |
2,088
|
SDRAM MOBILE / 8MX16 SD / FBGA-54 / 133 MHZ / -40 C~+95 C / RoHS / 3.3 V / TRAY / 348 pcs |
| MX30UF1G16AC-XKI TR |
MACRONIX/MXIC/旺宏 |
FLASH-NAND |
33,000
|
FLASH-NAND / 64MX16 NAND SLC / FBGA-63 / 25NS / -40 C~+85 C / RoHS / 1.70-1.95V / TAPE ON REEL / 3000 pcs 1.0 kg 39*36*6 cm |
| IS62WV51216BLL-55TLI-TR |
ISSI/矽成 |
SRAM-ASYNC |
1,500
|
SRAM-ASYNC / 512KX16 SLOW / TSOP2(44) / 55 NS / -40 C~+85 C / RoHS / 1.65V-3.6V / TAPE ON REEL / 1000 pcs |
| IS42S32800J-7BLI |
ISSI/矽成 |
SDRAM |
3,600
|
SDRAM / 8MX32 SD / FBGA-54 / 143 MHZ / -40 C~+95 C / RoHS / 3.3 V / TRAY / 2400 pcs 2.11 kg 37*9*15 cm |
| XA6SLX9-2FTG256Q0100 |
AMD XILINX/赛灵思 |
FPGA |
2,000
|
FPGA / 6SLX9 / FBGA-256 / 1080 MHZ / -40 C~+125 C / RoHS / 1.14V~1.26 / TAPE ON REEL |
| MX30LF1G18AC-XKIT/R |
MACRONIX/MXIC/旺宏 |
FLASH-NAND |
18,000
|
FLASH-NAND / 128MX8 NAND SLC / VFBGA-63 / 1 MHZ / -40 C~+85 C / RoHS / 2.7V~3.6V / TAPE ON REEL / 3000 pcs 1.0 kg 39*36*6 cm |
| K4F6E304HB-MGCJ000 |
SAMSUNG/三星 |
LPDDR4 MOBILE |
6,562
|
LPDDR4 MOBILE / 512MX32 LPDDR4 / WFBGA-200 / 1866 MHZ / -25 C~+85 C / RoHS / 1.1 V / TRAY / 1280 pcs 2.0 kg 38*19*11 cm |
| MX29F800CBTI-70G |
MACRONIX/MXIC/旺宏 |
FLASH-NOR |
1,930
|
FLASH-NOR / 29F800 BOTTOM / TSOP-48 / 70 NS / -40 C~+85 C / RoHS / 5 V / TRAY / 960 pcs 1.91 kg 36*16*9 cm |
| MX30LF4G28AC-TI/TR |
MACRONIX/MXIC/旺宏 |
FLASH-NAND |
6,000
|
FLASH-NAND / 512MX8 NAND SLC / TSOP-48 / 1 MHZ / -40 C~+85 C / RoHS / 2.7V~3.6V / TAPE ON REEL / 1500 pcs 1.0 kg 39*36*6 cm |
| S34ML02G100TFI000 |
INFINEON+CYPRESS/英飞凌 |
FLASH-NAND |
67,583
|
FLASH-NAND / 256MX8 NAND SLC / TSOP-48 / 25NS / -40 C~+85 C / RoHS / 3.3 V / TRAY / 960 pcs 2.36 kg 40*19*12 cm |
| K4B2G1646F-BMMATCV |
SAMSUNG/三星 |
DDR3L SDRAM |
10,000
|
DDR3L SDRAM / 128MX16 DDR3L / FBGA-96 / 933 MHZ / -40 C~+95 C / RoHS / 1.35V / TAPE ON REEL |
| 27C256-12P |
MICROCHIP/微芯 |
EPROM |
352
|
EPROM / 27C256 / DIP-28 / 120 NS / 0 C~+70 C / Leaded / 5.0 V |
| M27C1001-10F1(ROHS) |
STM/意法半导体 |
EPROM |
5,944
|
EPROM / 27C010 / CDIP-28 / 100 NS / 0 C~+70 C / RoHS / 5 V / TUBE / EOL / 240 pcs 3.1 kg 55*9*7 cm |
| M27C1001-10C6(ROHS) |
STM/意法半导体 |
EPROM |
148
|
EPROM / 27C010 / PLCC-32 / 100 NS / -40 C~+85 C / RoHS / 5 V / TUBE / EOL / 320 pcs 0.7 kg 56*12*3 cm |
| M27C256-12C1(ROHS) |
STM/意法半导体 |
OTPROM |
96
|
OTPROM / 27C256 / PLCC-32 / 120 NS / 0 C~+70 C / RoHS / 5.0 V / EOL |
| MT41K128M16JT-125IT:KTR |
MICRON/美光 |
DDR3L SDRAM |
22,000
|
DDR3L SDRAM / 128MX16 DDR3L / FBGA-96 / 800 MHZ / -40 C~+95 C / RoHS / 1.35V / TAPE ON REEL / 2000 pcs 1.3 kg 36*35*7 cm |
| IS42S16320F-6TLI |
ISSI/矽成 |
SDRAM |
5,685
|
SDRAM / 32MX16 SD / TSOP2(54) / 166 MHZ / -40 C~+95 C / RoHS / 3.3 V / TRAY / 1080 pcs |
| MT48LC16M16A2P-6A:GTR |
MICRON/美光 |
SDRAM |
42,000
|
SDRAM / 16MX16 SD / TSOP2(54) / 167 MHZ / 0 C~+70 C / RoHS / 3.3 V / TAPE ON REEL / 2000 pcs |
| K4A4G165WE-BCTD000 |
SAMSUNG/三星 |
DDR4 SDRAM |
28,000
|
DDR4 SDRAM / 256MX16 DDR4 / FBGA-96 / 1333 MHZ / 0 C~+85 C / RoHS / 1.2V / TRAY / 1120 pcs |
| MT41K256M16TW-107 IT:P TR |
MICRON/美光 |
DDR3L SDRAM |
26,000
|
DDR3L SDRAM / 256MX16 DDR3/L / FBGA-96 / 933 MHZ / -40 C~+95 C / RoHS / 1.35V/1.5V / TAPE ON REEL / 2000 pcs 1.85 kg 36*34*7 cm |
| AT45DB321E-SHF-B |
DIALOG/ADESTO/戴樂格 |
DATA FLASH |
2,160
|
DATA FLASH / 45DB321 / SOIC-8 / 85 MHZ / -40 C~+85 C / RoHS / 2.3V-3.6V / TUBE / 90 pcs |
| EEEFT1H221AP |
PANASONIC/松下 |
CAPACITOR |
24,500
|
CAPACITOR / 1H221 / SMD / 100 KHZ / -55 C~+105 C / RoHS / 50V / TAPE ON REEL / 500 pcs |
| MT29F4G08ABBEAH4:E |
MICRON/美光 |
FLASH-NAND |
14,000
|
FLASH-NAND / 512MX8 NAND SLC / FBGA-63 / 1 MHZ / 0 C~+70 C / RoHS / 1.8 V / TAPE ON REEL / EOL / 1000 pcs 0.86 kg 37*34*6* cm |