| K4B2G1646F-BMMA000 |
SAMSUNG/三星 |
DDR3L SDRAM |
7,840
|
DDR3L SDRAM / 128MX16 DDR3L / FBGA-96 / 933 MHZ / -40 C~+95 C / RoHS / 1.35V / TRAY / 1120 pcs |
| K4B4G1646E-BMMA000 |
SAMSUNG/三星 |
DDR3L SDRAM |
4,930
|
DDR3L SDRAM / 256MX16 DDR3L / FBGA-96 / 933 MHZ / -40 C~+95 C / RoHS / 1.35V / TRAY / 1120 pcs |
| MX25L6433FMI-08G/TR |
MACRONIX/MXIC/旺宏 |
FLASH-SPI |
3,000
|
FLASH-SPI / 64MB SPI / SOP-16 / 133 MHZ / -40 C~+85 C / RoHS / 3.3 V / TAPE ON REEL / 1000 pcs |
| DSPIC33CK256MP205-I/PT |
MICROCHIP/微芯 |
DIGITAL SIGNAL CONTROLLER |
375
|
DIGITAL SIGNAL CONTROLLER / 33CK256 / TQFP-48 / 100 MHZ / -40 C~+85 C / RoHS / 3.0V~3.6V / TRAY / 250 pcs |
| MX30LF1G18AC-XKIT/R |
MACRONIX/MXIC/旺宏 |
FLASH-NAND |
6,000
|
FLASH-NAND / 128MX8 NAND SLC / VFBGA-63 / 1 MHZ / -40 C~+85 C / RoHS / 2.7V~3.6V / TAPE ON REEL / 3000 pcs 1.0 kg 39*36*6 cm |
| M27C1001-45XB1(ROHS) |
STM/意法半导体 |
EPROM |
8,280
|
EPROM / 27C010 / PDIP-28 / 45 NS / 0 C~+70 C / RoHS / 5 V / TUBE / EOL / 360 pcs |
| K4T1G084QJ-BCE7000 |
SAMSUNG/三星 |
DDR2 SDRAM |
26,967
|
DDR2 SDRAM / 128MX8 DDR2 / FBGA-60 / 400 MHZ / 0 C~+95 C / RoHS / 1.8 V / TRAY / EOL / 1280 pcs 2.0 kg 38*19*11 cm |
| IS49RL36160-107EBL |
ISSI/矽成 |
RLDRAM3 |
652
|
RLDRAM3 / 16MX36 RLD3 / FBGA-168 / 933 MHZ / 0 C~+95 C / RoHS / 1.35V / TRAY / 119 pcs |
| IS46TR81280BL-125JBLA2 |
ISSI/矽成 |
DDR3L SDRAM |
90
|
DDR3L SDRAM / 128MX8 DDR3L / FBGA-78 / 800 MHZ / -40 C~+105 C / RoHS / 1.35V / TRAY |
| IS45VM32400H-6BLA2-BM |
ISSI/矽成 |
SDRAM MOBILE |
12
|
SDRAM MOBILE / 4MX32 SD / FBGA-90 / 166MHZ / -40 C~+105 C / RoHS / 1.8 V |
| IS43LD32640B-18BPL |
ISSI/矽成 |
LPDDR2 MOBILE |
15
|
LPDDR2 MOBILE / 64MX32 LPDDR2 / FBGA-134 / 533 MHZ / 0 C~+85 C / RoHS / 1.2/1.8V |
| IS49RL36160-093EBL-BM |
ISSI/矽成 |
RLDRAM3 |
210
|
RLDRAM3 / 16MX36 RLD3 / FBGA-168 / 1066 MHZ / 0 C~+95 C / RoHS / 1.35V |
| IS49RL18320-125BL-BM |
ISSI/矽成 |
RLDRAM3 |
96
|
RLDRAM3 / 32MX18 RLD3 / FBGA-168 / 800 MHZ / 0 C~+95 C / RoHS / 1.35V |
| IS49RL36160-107EBL-BM |
ISSI/矽成 |
RLDRAM3 |
550
|
RLDRAM3 / 16MX36 RLD3 / FBGA-168 / 933 MHZ / 0 C~+95 C / RoHS / 1.35V |
| IS49RL36160-107EBLI |
ISSI/矽成 |
RLDRAM3 |
718
|
RLDRAM3 / 16MX36 RLD3 / FBGA-168 / 933 MHZ / -40 C~+95 C / RoHS / 1.35V / TRAY |
| IS43LR32320B-5BLI |
ISSI/矽成 |
LPDDR1 MOBILE |
44,970
|
LPDDR1 MOBILE / 32MX32 LPDDR1 / FBGA-90 / 200 MHZ / -40 C~+95 C / RoHS / 1.8 V / TRAY |
| IS42SM16400M-6BLI |
ISSI/矽成 |
SDRAM MOBILE |
7
|
SDRAM MOBILE / 4MX16 SD / FBGA-54 / 166MHZ / -40 C~+95 C / RoHS / 3.3 V / TRAY |
| IS42SM16200D-6BLI |
ISSI/矽成 |
SDRAM MOBILE |
4
|
SDRAM MOBILE / 2MX16 SD / FBGA-54 / 166MHZ / -40 C~+95 C / RoHS / 3.3 V / TRAY |
| IS42S16160J-7BI |
ISSI/矽成 |
SDRAM |
7
|
SDRAM / 16MX16 SD / FBGA-54 / 143 MHZ / -40 C~+85 C / Leaded / 3.3 V / TRAY |
| IS46TR16640B-15GBLA2 |
ISSI/矽成 |
DDR3 SDRAM |
90
|
DDR3 SDRAM / 64MX16 DDR3 / FBGA-96 / 667 MHZ / -40 C~+105 C / RoHS / 1.5 V / TRAY / 190 pcs |
| IS46R83200F-6BA2-BM |
ISSI/矽成 |
DDR1 SDRAM |
823
|
DDR1 SDRAM / 32MX8 DDR1 / BGA-60 / 166MHZ / -40 C~+105 C / Leaded / 2.5 V |
| IS43LD32800B-25BLI |
ISSI/矽成 |
LPDDR2 MOBILE |
241
|
LPDDR2 MOBILE / 8MX32 LPDDR2 / FBGA / 400 MHZ / -40 C~+95 C / RoHS / 1.14V~1.95 |
| IS43DR16640C-3DBI |
ISSI/矽成 |
DDR2 SDRAM |
228
|
DDR2 SDRAM / 64MX16 DDR2 / FBGA-84 / 333 MHZ / -40 C~+85 C / Leaded / 1.8 V |
| IS43TR16640BL-107MBL |
ISSI/矽成 |
DDR3L SDRAM |
2,661
|
DDR3L SDRAM / 64MX16 DDR3L / FBGA-96 / 933 MHZ / 0 C~+85 C / RoHS / 1.35V / TRAY / EOL |
| IS46DR16320D-3DBA2 |
ISSI/矽成 |
DDR2 SDRAM |
1,356
|
DDR2 SDRAM / 32MX16 DDR2 / FBGA-84 / 333 MHZ / -40 C~+105 C / Leaded / 1.8 V / TRAY |