| MT41K256M16TW-107:P TR |
MICRON/美光 |
DDR3L SDRAM |
6,000
|
DDR3L SDRAM / 256MX16 DDR3L / FBGA-96 / 933 MHZ / 0 C~+85 C / RoHS / 1.35V / TAPE ON REEL / 2000 pcs |
| MX30LF1G18AC-TI TR |
MACRONIX/MXIC/旺宏 |
FLASH-NAND |
31,500
|
FLASH-NAND / 128MX8 NAND SLC / TSOP-48 / 1 MHZ / -40 C~+85 C / RoHS / 3.3 V / TAPE ON REEL / 1500 pcs 1.7 kg 39*36*6 cm |
| MT41K256M16TW-107 IT:P TR |
MICRON/美光 |
DDR3L SDRAM |
10,000
|
DDR3L SDRAM / 256MX16 DDR3L / FBGA-96 / 933 MHZ / -40 C~+95 C / RoHS / 1.35V / TAPE ON REEL / 2000 pcs 1.85 kg 36*34*7 cm |
| MX29F400CBTI-70G |
MACRONIX/MXIC/旺宏 |
FLASH-NOR |
7,680
|
FLASH-NOR / 29F400 BOTTOM / TSOP-48 / 70 NS / -40 C~+85 C / RoHS / 5 V / TRAY / 960 pcs 2.1 kg 35*16*9 cm |
| K4B1G0846I-BYK0T00 |
SAMSUNG/三星 |
DDR3L SDRAM |
96,000
|
DDR3L SDRAM / 128MX8 DDR3L / FBGA-78 / 800 MHZ / 0 C~+85 C / RoHS / 1.35V / TAPE ON REEL / 2000 pcs |
| MX25L6433FM2I-08G-TR |
MACRONIX/MXIC/旺宏 |
FLASH-SPI |
14,000
|
FLASH-SPI / 64MB SPI / SOP-8 / 133 MHZ / -40 C~+85 C / RoHS / 3.3 V / TAPE ON REEL / 2000 pcs |
| MX29F040CQI-70G TR |
MACRONIX/MXIC/旺宏 |
FLASH-NOR |
12,000
|
FLASH-NOR / 29F040 / PLCC-32 / 70 NS / -40 C~+85 C / RoHS / 5 V / TAPE ON REEL / 750 pcs 1.5 kg 36*34*6 cm |
| MX30LF4G28AC-TI/TR |
MACRONIX/MXIC/旺宏 |
FLASH-NAND |
28,500
|
FLASH-NAND / 512MX8 NAND SLC / TSOP-48 / 1 MHZ / -40 C~+85 C / RoHS / 2.7V~3.6V / TAPE ON REEL / 1500 pcs 1.0 kg 39*36*6 cm |
| IS43DR16320B-3DBL |
ISSI/矽成 |
DDR2 SDRAM |
40,380
|
DDR2 SDRAM / 32MX16 DDR2 / FBGA-84 / 333 MHZ / 0 C~+85 C / RoHS / 1.8 V / TRAY / EOL / 1360 pcs 2.0 kg 37*16*9 cm |
| AT45DB081E-MHN-Y |
ADESTO |
DATA FLASH |
270
|
DATA FLASH / 45DB081 / UDFN-8 / 85 MHZ / -40 C~+85 C / RoHS / 1.65V-3.6V / TRAY |
| MX30LF1G08AA-XKI/TR |
MACRONIX/MXIC/旺宏 |
FLASH-NAND |
6,000
|
FLASH-NAND / 128MX8 NAND SLC / VFBGA-63 / 1 MHZ / -40 C~+85 C / RoHS / 2.7V~3.6V / TAPE ON REEL / EOL / 3000 pcs 1.0 kg 36*39*6 cm |
| MT28F400B5WG-8BTR |
MICRON/美光 |
FLASH-NOR |
21,700
|
FLASH-NOR / 28F400 / TSOP-48 / 0 C~+70 C / Leaded / 5 V / TAPE ON REEL |
| K4T51163QQ-BPE70CV |
SAMSUNG/三星 |
DDR2 SDRAM |
83,982
|
DDR2 SDRAM / 32MX16 DDR2 / FBGA-84 / 400 MHZ / -40 C~+85 C / RoHS / 1.8 V / TRAY / EOL / 1280 pcs |
| V62C51864L-35P |
MOSEL-VITELIC |
SRAM |
33,482
|
SRAM / 8KX8 SRAM / PDIP-28 / 35 NS / 0 C~+70 C / Leaded / 5 V / TUBE / 650 pcs 5.0 kg 24*8*51 cm |
| MP1921HS-A-LF-Z |
MPS/芯源 |
GATE DRIVER |
72,500
|
GATE DRIVER / MP1921 / SOIC-8 / 500 KHZ / -40 C~+125 C / RoHS / 9V~18V / TAPE ON REEL / 2500 pcs |
| S29JL032J70TFI320 |
INFINEON+CYPRESS/英飞凌 |
FLASH-NOR |
4,294
|
FLASH-NOR / 29JL032 / TSOP-48 / 70 NS / -40 C~+85 C / RoHS / 3.0V / TRAY |
| M27C1001-10F1(ROHS) |
STM/意法半导体 |
EPROM |
5,728
|
EPROM / 27C010 / CDIP-28 / 100 NS / 0 C~+70 C / RoHS / 5 V / TUBE / EOL / 240 pcs 3.1 kg 55*9*7 cm |
| K4B1G0846I-BYK0TCV |
SAMSUNG/三星 |
DDR3L SDRAM |
14,000
|
DDR3L SDRAM / 128MX8 DDR3L / FBGA-78 / 800 MHZ / -40 C~+85 C / RoHS / 1.35V / TAPE ON REEL / 2000 pcs 1.0 kg 36*34*7 cm |
| MT28F400B5WG-8B |
MICRON/美光 |
FLASH-NOR |
15,000
|
FLASH-NOR / 28F400 / TSOP-48 / 80 NS / 0 C~+70 C / Leaded / 5 V / TAPE ON REEL / EOL / 1000 pcs 1.5 kg 37*35*8 cm |
| IS42S86400B-7TL |
ISSI/矽成 |
SDRAM |
1,183
|
SDRAM / 64MX8 SD / TSOP2(54) / 143 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 1080 pcs |
| K4S281632O-LI75T00 |
SAMSUNG/三星 |
SDRAM |
88,000
|
SDRAM / 8MX16 SD / TSOP2(54) / 133 MHZ / -40 C~+85 C / RoHS / 3.3 V / TAPE ON REEL / EOL / 2000 pcs 2.6 kg 36*35*7 cm |
| A29040BL-55UF |
AMIC/聯笙 |
FLASH-NOR |
3,450
|
FLASH-NOR / 29F040 / PLCC-32 / 55 NS / 0 C~+70 C / RoHS / 5 V / TUBE / EOL / 3000 pcs 5.5 kg 10*10-59 cm |
| M393A2K40CB1-CRC4Q |
SAMSUNG/三星 |
DDR4 RDIMM |
8
|
DDR4 RDIMM / 16GB DDR4 RDIMM / 288-PIN / 1200 MHZ / 0 C~+85 C / RoHS / 1.2V |
| AM29F040B-90EC |
CYPRESS/赛普拉斯 |
FLASH-NOR |
4
|
FLASH-NOR / 29F040 / TSOP-32 / 90 NS / 0 C~+70 C / Leaded / 5 V / TRAY / 780 pcs |
| IS45S16160D-7BLA1 |
ISSI/矽成 |
SDRAM-AUTO |
4,827
|
SDRAM-AUTO / 16MX16 SD / FBGA-54 / 143 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 2400 pcs |