| IS62WV2568BLL-55TLI-TR |
ISSI/矽成 |
SRAM-ASYNC |
9,000
|
SRAM-ASYNC / 256KX8 SLOW / TSOP-32 / 55 NS / -40 C~+85 C / RoHS / 1.65V-3.6V / TAPE ON REEL / 1500 pcs 1.5 kg 36*34*6 cm |
| STM32G030F6P6TR |
STM/意法半导体 |
MCU-ARM |
125,000
|
MCU-ARM / 32G030 / TSSOP-20 / 64MHZ / -40 C~+85 C / RoHS / 2.0V-3.6V / TAPE ON REEL / 2500 pcs |
| KLMBG4GESD-C02PT18 |
SAMSUNG/三星 |
FLASH-EMMC |
40,000
|
FLASH-EMMC / 32GB EMMC / FBGA-100 / 52MHZ / -40 C~+85 C / RoHS / 3.3 V / TAPE ON REEL / 1000 pcs |
| MT25QL128ABA1EW9-0SIT |
MICRON/美光 |
FLASH-SPI |
7,680
|
FLASH-SPI / 128MB SPI / W-PDFN-8 / 133 MHZ / -40 C~+85 C / RoHS / 2.7V~3.6V / TRAY / 1920 pcs |
| EEEFT1H221AP |
PANASONIC/松下 |
CAPACITOR |
30,000
|
CAPACITOR / 1H221 / SMD / 100 KHZ / -55 C~+105 C / RoHS / 50V / TAPE ON REEL / 500 pcs |
| IS42S16320F-7TL |
ISSI/矽成 |
SDRAM |
556
|
SDRAM / 32MX16 SD / TSOP2(54) / 143 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / 1080 pcs |
| K4S281632O-LI75T00 |
SAMSUNG/三星 |
SDRAM |
84,000
|
SDRAM / 8MX16 SD / TSOP2(54) / 133 MHZ / -40 C~+85 C / RoHS / 3.3 V / TAPE ON REEL / EOL / 2000 pcs 2.6 kg 36*35*7 cm |
| IS46DR16128A-3DBLA2 |
ISSI/矽成 |
DDR2 SDRAM |
1,467
|
DDR2 SDRAM / 128MX16 DDR2 / FBGA-84 / 333 MHZ / -40 C~+105 C / RoHS / 1.8 V / TRAY / 1620 pcs |
| MX29F800CBTI-70G/TR |
MACRONIX/MXIC/旺宏 |
FLASH-NOR |
6,000
|
FLASH-NOR / 29F800 BOTTOM / TSOP-48 / 70 NS / -40 C~+85 C / RoHS / 5 V / TAPE ON REEL / 1500 pcs 1.75 kg 39*36*6 cm |
| MX25L6433FM2I-08G-TR |
MACRONIX/MXIC/旺宏 |
FLASH-SPI |
34,000
|
FLASH-SPI / 64MB SPI / SOP-8 / 133 MHZ / -40 C~+85 C / RoHS / 3.3 V / TAPE ON REEL / 2000 pcs 0.0 kg 39*36*6 cm |
| MX29F040CQI-70G |
MACRONIX/MXIC/旺宏 |
FLASH-NOR |
14,700
|
FLASH-NOR / 29F040 / PLCC-32 / 70 NS / -40 C~+85 C / RoHS / 5 V / TUBE / 2100 pcs 4.0 kg |
| K4B1G1646I-BCNB000 |
SAMSUNG/三星 |
DDR3 SDRAM |
26,880
|
DDR3 SDRAM / 64MX16 DDR3 / FBGA-96 / 1066 MHZ / 0 C~+85 C / RoHS / 1.5 V / TRAY / 1120 pcs |
| K4B2G1646F-BCNB000 |
SAMSUNG/三星 |
DDR3 SDRAM |
24,640
|
DDR3 SDRAM / 128MX16 DDR3 / FBGA-96 / 1066 MHZ / 0 C~+85 C / RoHS / 1.5 V / TRAY / 1120 pcs |
| K4B2G1646F-BCNB0CV |
SAMSUNG/三星 |
DDR3 SDRAM |
30,240
|
DDR3 SDRAM / 128MX16 DDR3 / FBGA-96 / 1066 MHZ / 0 C~+85 C / RoHS / 1.5 V / TRAY / 1120 pcs |
| MT48LC16M16A2P-6A:GTR |
MICRON/美光 |
SDRAM |
20,000
|
SDRAM / 16MX16 SD / TSOP2(54) / 167 MHZ / 0 C~+70 C / RoHS / 3.3 V / TAPE ON REEL / 2000 pcs |
| MX30UF1G16AC-XKI TR |
MACRONIX/MXIC/旺宏 |
FLASH-NAND |
42,000
|
FLASH-NAND / 64MX16 NAND SLC / FBGA-63 / 25NS / -40 C~+85 C / RoHS / 1.70-1.95V / TAPE ON REEL / 3000 pcs 1.0 kg 39*36*6 cm |
| MX30LF1G18AC-XKIT/R |
MACRONIX/MXIC/旺宏 |
FLASH-NAND |
12,000
|
FLASH-NAND / 128MX8 NAND SLC / VFBGA-63 / 1 MHZ / -40 C~+85 C / RoHS / 2.7V~3.6V / TAPE ON REEL / 3000 pcs 1.0 kg 39*36*6 cm |
| K4B8G0846D-MYK0000 |
SAMSUNG/三星 |
DDR3L SDRAM |
7,680
|
DDR3L SDRAM / 1GX8 DDR3L / FBGA-78 / 800 MHZ / 0 C~+85 C / RoHS / 1.35V/1.5V / TRAY / EOL / 1280 pcs |
| IS61WV102416DBLL-10TLI |
ISSI/矽成 |
SRAM-ASYNC |
5,760
|
SRAM-ASYNC / 1MX16 FAST / TSOP-48 / 10 NS / -40 C~+85 C / RoHS / 2.4V~3.6V / TRAY / 960 pcs 2.0 kg 9*16*37 cm |
| MX29F800CBTI-70G |
MACRONIX/MXIC/旺宏 |
FLASH-NOR |
1,930
|
FLASH-NOR / 29F800 BOTTOM / TSOP-48 / 70 NS / -40 C~+85 C / RoHS / 5 V / TRAY / 960 pcs 1.91 kg 36*16*9 cm |
| IS42S16800E-7TLI |
ISSI/矽成 |
SDRAM |
3,756
|
SDRAM / 8MX16 SD / TSOP2(54) / 143 MHZ / -40 C~+95 C / RoHS / 3.3 V / TRAY / EOL / 1080 pcs |
| MX25L6433FMI-08G/TR |
MACRONIX/MXIC/旺宏 |
FLASH-SPI |
9,000
|
FLASH-SPI / 64MB SPI / SOP-16 / 133 MHZ / -40 C~+85 C / RoHS / 3.3 V / TAPE ON REEL / 1000 pcs |
| K4F6E304HB-MGCJ000 |
SAMSUNG/三星 |
LPDDR4 MOBILE |
8,150
|
LPDDR4 MOBILE / 512MX32 LPDDR4 / FBGA-200 / 1866 MHZ / -25 C~+85 C / RoHS / 1.1 V / TRAY / 1280 pcs 2.0 kg 38*19*11 cm |
| IS43R16320D-6BLI |
ISSI/矽成 |
DDR1 SDRAM |
4,200
|
DDR1 SDRAM / 32MX16 DDR1 / BGA-60 / 166MHZ / -40 C~+95 C / RoHS / 2.5 V / TRAY / 1900 pcs 2.0 kg 36*9*16* cm |
| MT41K256M16TW-107 IT:P TR |
MICRON/美光 |
DDR3L SDRAM |
20,000
|
DDR3L SDRAM / 256MX16 DDR3/L / FBGA-96 / 933 MHZ / -40 C~+95 C / RoHS / 1.35V/1.5V / TAPE ON REEL / 2000 pcs 1.85 kg 36*34*7 cm |