| IS45S16400N-6TLA1 |
ISSI/矽成 |
SDRAM |
2,175
|
SDRAM / 4MX16 SD / TSOP2(54) / 166 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY |
| S34ML04G100TFI000 |
SKYHIGH |
FLASH-NAND |
539
|
FLASH-NAND / 512MX8 NAND SLC / TSOP-48 / 25 NS / -40 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 960 pcs 2.5 kg 40*19*12 cm |
| IS42S16160D-6BLI |
ISSI/矽成 |
SDRAM |
13,623
|
SDRAM / 16MX16 SD / BGA-54 / 166 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 2400 pcs |
| IS45S16160D-75ETLA1-TR |
ISSI/矽成 |
SDRAM |
74,250
|
SDRAM / 16MX16 SD / TSOP2(54) / 133 MHZ / -40 C~+85 C / RoHS / 3.3 V / TAPE ON REEL / EOL / 1500 pcs |
| EDS2532CABH-6B-E |
MICRON/美光 |
SDRAM |
15,095
|
SDRAM / 8MX32 SD / FBGA-90 / 166 MHZ / 0 C~+70 C / RoHS / 2.5 V / TRAY / EOL / 1045 pcs 1.2 kg 37*17.5*7.5 cm |
| IC41LV16100S-50TG |
ISSI/矽成 |
DRAM |
12,016
|
DRAM / 1MX16 EDO / TSOP2(44/50) / 50 NS / 0 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 1170 pcs 2.0 kg 38*19*10 cm |
| M5M4V16169DTP-8 |
MITSUBISHI/三菱 |
CACHED DRAM |
360
|
CACHED DRAM / 1MX16 CDRAM / TSOP2(70) / 80 NS / 0 C~+70 C / Leaded / 3.3 V / TRAY / EOL / 360 pcs 1.06 kg 36*16*6 cm |
| HY57V643220DLTP-7I |
SK HYNIX/海力士 |
SDRAM |
7,770
|
SDRAM / 2MX32 SD / TSOP2(86) / 143 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / 960 pcs 2.4 kg 37*18*11 cm |
| IS42S32200B-7T-TR |
ISSI/矽成 |
SDRAM |
3,750
|
SDRAM / 2MX32 SD / TSOP2(86) / 143 MHZ / 0 C~+85 C / Leaded / 3.3 V / TAPE ON REEL / 1500 pcs |
| S34ML08G301TFI100 |
SKYHIGH |
FLASH-NAND |
23,944
|
FLASH-NAND / 1GX8 NAND SLC / TSOP-48 / 25 NS / -40 C~+85 C / RoHS / 3.3 V / TRAY / 960 pcs |
| NT5DS32M16ES-5T/TR |
NANYA/南亞 |
DDR1 SDRAM |
477
|
DDR1 SDRAM / 32MX16 DDR1 / TSOP2(66) / RoHS / 2.5 V / TAPE ON REEL |
| NT5TU64M16GG-ACI |
NANYA/南亞 |
DDR2 SDRAM |
525
|
DDR2 SDRAM / 64MX16 DDR2 / FBGA-84 / 800 MBPS / -40 C~+95 C / RoHS / 1.8 V / TAPE ON REEL / 1000 pcs |
| IS45VM16800E-75BLA2 |
ISSI/矽成 |
SDRAM MOBILE |
41,370
|
SDRAM MOBILE / 8MX16 SD / BGA-54 / 133 MHZ / -40 C~+105 C / RoHS / 1.8 V / TRAY |
| IS61C256AL-12JLI |
ISSI/矽成 |
SRAM-ASYNC |
15
|
SRAM-ASYNC / 32KX8 ASYNC / SOJ-28 / 12 NS / -40 C~+85 C / RoHS / 5.0 V / TUBE / 3500 pcs 4.0 kg 53*13*12 cm |
| IC43DR16320E-25DBL |
ISSI/矽成 |
DDR2 SDRAM |
4,797
|
DDR2 SDRAM / 32MX16 DDR2 / FBGA-84 / 0 C~+85 C / RoHS / 1.8 V / TRAY / EOL |
| S34ML04G100TFI003 |
SKYHIGH |
FLASH-NAND |
1,000
|
FLASH-NAND / 512MX8 NAND SLC / TSOP-48 / 25 NS / -40 C~+85 C / RoHS / 3.3 V / TAPE ON REEL / EOL / 1000 pcs 1.0 kg 36*34*7 cm |
| M13S128168A-5TG |
ESMT/EMP/晶豪 |
DDR1 SDRAM |
82,085
|
DDR1 SDRAM / 8MX16 DDR1 / TSOP2(66) / 200 MHZ / 0 C~+85 C / RoHS / 2.5 V / TRAY / 1080 pcs 2.1 kg 36*16*9 cm |
| IS43R16160B-75TL |
ISSI/矽成 |
DDR1 SDRAM |
6,480
|
DDR1 SDRAM / 16MX16 DDR1 / TSOP2(66) / 200 MHZ / 0 C~+85 C / RoHS / 2.5 V / TRAY / EOL / 1080 pcs |
| EDD2516AETA-5B-E |
MICRON/美光 |
DDR1 SDRAM |
16,200
|
DDR1 SDRAM / 16MX16 DDR1 / TSOP2(66) / 200 MHZ / 0 C~+70 C / RoHS / 2.5 V / TAPE ON REEL / 1080 pcs 2.0 kg 38*18*11 cm |
| IS42S32800B-7TI |
ISSI/矽成 |
SDRAM |
8,013
|
SDRAM / 8MX32 SD / TSOP2(86) / 143 MHZ / -40 C~+85 C / Leaded / 3.3 V / TRAY / 108 pcs |
| H5PS5162GFR-S5C |
SK HYNIX/海力士 |
DDR2 SDRAM |
402
|
DDR2 SDRAM / 32MX16 DDR2 / FBGA-84 / 800 MBPS / 0 C~+95 C / RoHS / 1.8 V / TRAY / 1600 pcs 2.5 kg 38*18*11 cm |
| MX29LV320BTC-90 |
MACRONIX/MXIC/旺宏 |
FLASH-NOR |
9,984
|
FLASH-NOR / 29LV320 / TSOP-48 / 90 NS / 0 C~+70 C / Leaded / 3.3 V / TRAY / EOL / 768 pcs 2.0 kg |
| M29F040B-120K1 |
STM/意法半导体 |
FLASH-NOR |
31,712
|
FLASH-NOR / 29F040 / PLCC-32 / 120 NS / 0 C~+70 C / Leaded / 5.0 V / TUBE / 320 pcs 0.5 kg |
| K4S560832J-UC75000 |
SAMSUNG/三星 |
SDRAM |
1,244
|
SDRAM / 32MX8 SD / TSOP2(54) / 133 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / EOL |
| HY638256T1-20 |
SK HYNIX/海力士 |
SRAM-ASYNC |
22,669
|
SRAM-ASYNC / 32KX8 ASYNC / TSOP-28 / Leaded / 5.0 V / TRAY / 35*17*8 cm |