| M29W200BB-90M1 |
MICRON/美光 |
FLASH-NOR |
26,400
|
FLASH-NOR / 29LV200 BOTTOM / SOP-44 / 90 NS / 0 C~+70 C / Leaded / 2.7V~3.6V / TRAY / EOL / 240 pcs 2.0 kg 40*20*10,5 cm |
| TC58MBM94G1FT00 |
KIOXIA/鎧俠 |
FLASH-NAND |
18,552
|
FLASH-NAND / 64MB DOC / TSOP-48 / 55 NS / 0 C~+85 C / Leaded / 3.3 V / T&R / 1000 pcs 1.22 kg 28*27*6 cm |
| IS61LV5128AL-10KLI |
ISSI/矽成 |
SRAM-ASYNC |
157
|
SRAM-ASYNC / 512KX8 ASYNC / SOJ-36 / 10 NS / -40 C~+85 C / RoHS / 3.3 V / TUBE / EOL / 19 pcs 1.3 kg 14*12*53 cm |
| AR5312A-00 |
QUALCOMM/高通 |
TELECOM CHIP |
153
|
TELECOM CHIP / AR5312 / FBGA-484 / RoHS |
| TC203G06CF-7007 |
TOSHIBA/東芝 |
ASIC |
80
|
ASIC / TC203 / HQFP-208 / Leaded / 3.0V/5.0V / TRAY / 120 pcs |
| AT27BV1024-90VC |
MICROCHIP/微芯 |
OTPROM |
3,280
|
OTPROM / 27BV1024 / VSOP-40 / 90 NS / 0 C~+70 C / Leaded / 2.7V~3.6V / TRAY / 1600 pcs 3.0 kg 21*12*35 cm |
| IS41LV16256C-35TLI |
ISSI/矽成 |
DRAM |
3,063
|
DRAM / 256KX16 EDO / TSOP2(40/44) / 35 NS / -40 C~+85 C / RoHS / 3.3 V / EOL |
| IS49RL36160-125FBL |
ISSI/矽成 |
RLDRAM3 |
7
|
RLDRAM3 / 16MX36 RLD3 / FBGA-168 / 1600 MBPS / 0 C~+85 C / RoHS / 1.35V / TRAY / EOL |
| IS49RL36160-093EBLI |
ISSI/矽成 |
RLDRAM3 |
10
|
RLDRAM3 / 16MX36 RLD3 / FBGA-168 / 2133 MBPS / -40 C~+85 C / RoHS / 1.35V / TRAY / EOL |
| IS49RL36160-093BL |
ISSI/矽成 |
RLDRAM3 |
30
|
RLDRAM3 / 16MX36 RLD3 / FBGA-168 / 2133 MBPS / 0 C~+85 C / RoHS / 1.35V / TRAY / EOL |
| IS49RL36160-125EBL |
ISSI/矽成 |
RLDRAM3 |
36
|
RLDRAM3 / 16MX36 RLD3 / FBGA-168 / 1600 MBPS / 0 C~+85 C / RoHS / 1.35V / TRAY / EOL |
| IS49RL36160-107BL |
ISSI/矽成 |
RLDRAM3 |
54
|
RLDRAM3 / 16MX36 RLD3 / FBGA-168 / 1866 MBPS / 0 C~+85 C / RoHS / 1.35V / TRAY / EOL / 119 pcs |
| IS49RL36160-093EBL |
ISSI/矽成 |
RLDRAM3 |
283
|
RLDRAM3 / 16MX36 RLD3 / FBGA-168 / 2133 MBPS / 0 C~+85 C / RoHS / 1.35V / TRAY / EOL / 119 pcs |
| IS49RL36160-125BL |
ISSI/矽成 |
RLDRAM3 |
429
|
RLDRAM3 / 16MX36 RLD3 / FBGA-168 / 1600 MBPS / 0 C~+85 C / RoHS / 1.35V / TRAY / EOL / 119 pcs |
| IS49RL18320-093BL |
ISSI/矽成 |
RLDRAM3 |
942
|
RLDRAM3 / 32MX18 RLD3 / FBGA-168 / 2133 MBPS / 0 C~+85 C / RoHS / 1.35V / TRAY / 119 pcs |
| IS49RL36160-107EBLI |
ISSI/矽成 |
RLDRAM3 |
1,017
|
RLDRAM3 / 16MX36 RLD3 / FBGA-168 / 1866 MBPS / -40 C~+85 C / RoHS / 1.35V / TRAY / EOL |
| IS49RL36160-107EBL |
ISSI/矽成 |
RLDRAM3 |
2,272
|
RLDRAM3 / 16MX36 RLD3 / FBGA-168 / 1866 MBPS / 0 C~+85 C / RoHS / 1.35V / TRAY / EOL / 119 pcs |
| IS45S16160D-7BLA1 |
ISSI/矽成 |
SDRAM |
5,190
|
SDRAM / 16MX16 SD / FBGA-54 / 143 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 2400 pcs |
| IS42S32160B-7BLI |
ISSI/矽成 |
SDRAM |
2,062
|
SDRAM / 16MX32 SD / FBGA-90 / 143 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 2400 pcs |
| IS42S32800B-7TLI |
ISSI/矽成 |
SDRAM |
1,710
|
SDRAM / 8MX32 SD / TSOP2(86) / 143 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 1080 pcs 2.0 kg 37*11*9 cm |
| IS43R16320D-5TL |
ISSI/矽成 |
DDR1 SDRAM |
2,062
|
DDR1 SDRAM / 32MX16 DDR1 / TSOP2(66) / 200 MHZ / 0 C~+85 C / RoHS / 2.5 V / TRAY / EOL / 1080 pcs |
| IS43LR16160H-5BLI |
ISSI/矽成 |
LPDDR1 MOBILE |
49,009
|
LPDDR1 MOBILE / 16MX16 LPDDR1 / FBGA-60 / 200 MHZ / -40 C~+85 C / RoHS / 1.8 V / TRAY / 3000 pcs |
| IS42S32800B-6TL |
ISSI/矽成 |
SDRAM |
102
|
SDRAM / 8MX32 SD / TSOP2(86) / 166 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 1080 pcs 2.0 kg 33*38*10 cm |
| IS46LD32160A-3BLA2 |
ISSI/矽成 |
LPDDR2 MOBILE |
750
|
LPDDR2 MOBILE / 16MX32 LPDDR2 / FBGA-134 / 667 MBPS / -40 C~+105 C / RoHS / 1.2 V / TRAY |
| IS43R86400F-6TL |
ISSI/矽成 |
DDR1 SDRAM |
279
|
DDR1 SDRAM / 64MX8 DDR1 / TSOP2(66) / 166 MHZ / 0 C~+85 C / RoHS / 2.5 V |