| IS46DR32801B-37CBLA2 |
ISSI/矽成 |
DDR2 SDRAM |
39,217
|
DDR2 SDRAM / 8MX32 DDR2 / WBGA-126 / 533 MBPS / -40 C~+105 C / RoHS / 1.8 V / TRAY |
| IS46LD16320A-25BLA25 |
ISSI/矽成 |
LPDDR2 MOBILE |
41,157
|
LPDDR2 MOBILE / 32MX16 LPDDR2 / FBGA-134 / 800 MBPS / -40 C~+115 C / RoHS / 1.2 V |
| IS46DR32160C-3DBLA25 |
ISSI/矽成 |
DDR2 SDRAM |
125,208
|
DDR2 SDRAM / 16MX32 DDR2 / FBGA-126 / 667 MBPS / -40 C~+115 C / RoHS / 1.8 V / TRAY / 1620 pcs |
| IS43TR81280A-15GBLI |
ISSI/矽成 |
DDR3 SDRAM |
113,511
|
DDR3 SDRAM / 128MX8 DDR3 / FBGA-78 / 1333 MBPS / -40 C~+85 C / RoHS / 1.5 V / TRAY / EOL |
| IS43DR82560B-25EBLI |
ISSI/矽成 |
DDR2 SDRAM |
543
|
DDR2 SDRAM / 256MX8 DDR2 / FBGA-60 / 800 MBPS / -40 C~+85 C / RoHS / 1.8 V / TRAY / EOL / 136 pcs |
| IS43DR16160A-5BBLI |
ISSI/矽成 |
DDR2 SDRAM |
22,828
|
DDR2 SDRAM / 16MX16 DDR2 / FBGA-84 / 400 MBPS / -40 C~+85 C / RoHS / 1.8 V / TRAY / EOL / 2090 pcs |
| IS43DR16160A-37CBL |
ISSI/矽成 |
DDR2 SDRAM |
35,868
|
DDR2 SDRAM / 16MX16 DDR2 / FBGA-84 / 533 MBPS / 0 C~+85 C / RoHS / 1.8 V / TRAY / EOL / 209 pcs |
| IS42VM16160D-8BLI |
ISSI/矽成 |
SDRAM MOBILE |
62,914
|
SDRAM MOBILE / 16MX16 SD / FBGA-54 / 125 MHZ / -40 C~+85 C / RoHS / 1.8 V / TRAY / EOL / 240 pcs |
| IS42S83200G-7BL |
ISSI/矽成 |
SDRAM |
11,899
|
SDRAM / 32MX8 SD / BGA-54 / 143 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / 3480 pcs |
| IS42S16400N-6TL |
ISSI/矽成 |
SDRAM |
9,846
|
SDRAM / 4MX16 SD / TSOP2(54) / 166 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / 1080 pcs |
| GLS85LS1016B-M-C-FZJE-ND105 |
GREENLIANT/绿芯 |
NAND-DRIVE |
1,426
|
NAND-DRIVE / 16GB SATA NANDRIVE / FBGA-145 / 6.0 GB/S / 0 C~+70 C / RoHS / 3.3 V / TRAY / EOL / 308 pcs |
| L65059B1-003 |
LSI LOGIC |
SATELLITE RECEIVER |
1,996
|
SATELLITE RECEIVER / L65059 / PQFP-100 / 22 KHZ / 0 C~+70 C / Leaded / 3.3 V / TRAY / 396 pcs |
| 65034B2-004-UD0PPPFAA |
LSI LOGIC |
SATELLITE RECEIVER |
19,941
|
SATELLITE RECEIVER / L64724 / PQFP-100 / 22 KHZ / 0 C~+70 C / Leaded / 3.3 V / TRAY / 396 pcs |
| L64724-75 |
LSI LOGIC |
SATELLITE RECEIVER |
19,952
|
SATELLITE RECEIVER / L64724 / PQFP-100 / 22 KHZ / 0 C~+70 C / Leaded / 3.3 V / TRAY / 396 pcs |
| S34ML08G301BHV100 |
SKYHIGH |
FLASH-NAND |
1,005
|
FLASH-NAND / 1GX8 NAND SLC / BGA-63 / 25 NS / -40 C~+105 C / RoHS / 3.3 V / TRAY |
| MT45W2MW16PGA-70IT |
MICRON/美光 |
SRAM-PSEUDO |
68,000
|
SRAM-PSEUDO / 2MX16 PSEUDO / VFBGA-48 / 70 NS / -40 C~+85 C / RoHS / 1.8 V / TAPE ON REEL / EOL / 1000 pcs |
| K7N163645A-QC20 |
SAMSUNG/三星 |
SRAM-SYNC |
289
|
SRAM-SYNC / 512KX36 SYNC / TQFP-100 / 200 MHZ / 0 C~+70 C / Leaded / 2.5 V / TRAY / 289 pcs 1.7 kg 37*17*7 cm |
| IS49NLC36160A-18WBL |
ISSI/矽成 |
RLDRAM2 |
23,137
|
RLDRAM2 / 16MX36 RLD2 / WBGA-144 / 533 MHZ / 0 C~+85 C / RoHS / 1.5V/1.8V / TRAY / 1040 pcs |
| MT28F400B5WG-8B |
MICRON/美光 |
FLASH-NOR |
15,000
|
FLASH-NOR / 28F400 / TSOP-48 / 80 NS / 0 C~+70 C / Leaded / 5.0 V / TAPE ON REEL / EOL / 1000 pcs 1.5 kg 37*35*8 cm |
| MT28F400B5WG-8BTR |
MICRON/美光 |
FLASH-NOR |
21,700
|
FLASH-NOR / 28F400 / TSOP-48 / 0 C~+70 C / Leaded / 5.0 V / TAPE ON REEL |
| K4S560832J-LC750JP |
SAMSUNG/三星 |
SDRAM |
4,800
|
SDRAM / 32MX8 SD / TSOP2(54) / 133 MHZ / 0 C~+85 C / RoHS / 3.3V/5V / TRAY / 960 pcs |
| TB28F200B5T-80 |
INTEL/英特尔 |
FLASH-NOR |
298
|
FLASH-NOR / 28F200 / PSOP-44 / 80 NS / -40 C~+85 C / Leaded / 5.0 V |
| EDS2532AABH-75TT-E |
MICRON/美光 |
SDRAM |
2,992
|
SDRAM / 8MX32 SD / FBGA-90 / 133 MHZ / -20 ~+85 / RoHS / 3.3 V / TRAY / EOL / 1045 pcs 1.25 kg 37*8*8 cm |
| IS43LR32160B-6BL |
ISSI/矽成 |
LPDDR1 MOBILE |
1,171
|
LPDDR1 MOBILE / 16MX32 LPDDR1 / FBGA-90 / 166 MHZ / 0 C~+85 C / RoHS / 1.8 V / TRAY |
| IS46LR32160B-6BYA2 |
ISSI/矽成 |
LPDDR1 MOBILE |
2,134
|
LPDDR1 MOBILE / 16MX32 LPDDR1 / FBGA-90 / 166 MHZ / -40 C~+105 C / RoHS / 1.8 V / TRAY / EOL |