| IS46DR32801B-3DBLA25 |
ISSI/矽成 |
DDR2 SDRAM |
67,323
|
DDR2 SDRAM / 8MX32 DDR2 / WBGA-126 / 667 MBPS / -40 C~+115 C / RoHS / 1.8 V |
| IS43DR32160C-3DBL |
ISSI/矽成 |
DDR2 SDRAM |
3,151
|
DDR2 SDRAM / 16MX32 DDR2 / FBGA-126 / 667 MBPS / 0 C~+85 C / RoHS / 1.8 V / TRAY / 162 pcs |
| IS46DR32160C-3DBLA25-TR |
ISSI/矽成 |
DDR2 SDRAM |
11,250
|
DDR2 SDRAM / 16MX32 DDR2 / FBGA-126 / 667 MBPS / -40 C~+105 C / RoHS / 1.8 V / TAPE ON REEL |
| IS45S16800E-7TLA2 |
ISSI/矽成 |
SDRAM |
6,159
|
SDRAM / 8MX16 SD / TSOP2(54) / 143 MHZ / -40 C~+105 C / RoHS / 3.3 V / TRAY / 1080 pcs |
| K4B4G0846E-BMMA0CV |
SAMSUNG/三星 |
DDR3L SDRAM |
1,816
|
DDR3L SDRAM / 512MX8 DDR3L / FBGA-78 / 1866 MBPS / -40 C~+95 C / RoHS / 1.35V / TRAY / EOL / 1280 pcs |
| MT46V16M8TG-6T:D |
MICRON/美光 |
DDR1 SDRAM |
12,000
|
DDR1 SDRAM / 16MX8 DDR1 / TSOP-66 / 167 MHZ / 0 C~+85 C / Leaded / 2.5 V / TAPE ON REEL / 1000 pcs 1.54 kg 37*35*8 cm |
| MT46V32M8TG-6T:K |
MICRON/美光 |
DDR1 SDRAM |
1,000
|
DDR1 SDRAM / 32MX8 DDR1 / TSOP-66 / 167 MHZ / 0 C~+85 C / Leaded / 2.5 V / TAPE ON REEL / 1000 pcs 1.6 kg 37*35*8 cm |
| MT46V64M4FG-6:G |
MICRON/美光 |
DDR1 SDRAM |
16,000
|
DDR1 SDRAM / 64MX4 DDR1 / FBGA-60 / 167 MHZ / 0 C~+85 C / Leaded / 2.5 V / TAPE ON REEL / 1000 pcs 1.0 kg 37*8*35 cm |
| MT46V32M4TG-75:DTR |
MICRON/美光 |
DDR1 SDRAM |
4,000
|
DDR1 SDRAM / 32MX4 DDR1 / TSOP-66 / 133 MHZ / 0 C~+85 C / Leaded / 2.5 V / TAPE ON REEL / EOL / 1000 pcs 1.54 kg 37*35*8 cm |
| MT46V32M4TG-75:D |
MICRON/美光 |
DDR1 SDRAM |
4,000
|
DDR1 SDRAM / 32MX4 DDR1 / TSOP-66 / 133 MHZ / 0 C~+85 C / Leaded / 2.5 V / TRAY / EOL / 1000 pcs 2.69 kg 37*19*12 cm |
| IS43LR32800H-5BLI |
ISSI/矽成 |
LPDDR1 MOBILE |
20,491
|
LPDDR1 MOBILE / 8MX32 LPDDR1 / FBGA-90 / 200 MHZ / -40 C~+85 C / RoHS / 1.8 V |
| M29F200BT-70N1 |
STM/意法半导体 |
FLASH-NOR |
35,212
|
FLASH-NOR / 29F200 TOP / TSOP-48 / 70 NS / 0 C~+70 C / Leaded / 5.0 V / TRAY / EOL / 576 pcs 1.0 kg 40*20*11 cm |
| IS43R16320D-5TLI |
ISSI/矽成 |
DDR1 SDRAM |
3,097
|
DDR1 SDRAM / 32MX16 DDR1 / TSOP2(66) / 200 MHZ / -40 C~+85 C / RoHS / 2.5 V / TRAY / EOL / 1080 pcs 2.0 kg 37*16*9 cm |
| STI5512AWE |
STM/意法半导体 |
TELECOM CHIP |
269
|
TELECOM CHIP / STI5512 / BGA-248 / Leaded |
| IS61WV51216BLL-10MLI |
ISSI/矽成 |
SRAM-ASYNC |
7
|
SRAM-ASYNC / 512KX16 ASYNC / MBGA-48 / 10 NS / -40 C~+85 C / RoHS / 2.2V-3.6V / TRAY / 2200 pcs 2.0 kg 37*16*9 cm |
| IS43LD32320C-18BPLI |
ISSI/矽成 |
LPDDR2 MOBILE |
4,123
|
LPDDR2 MOBILE / 32MX32 LPDDR2 / PBGA-168 / 1066 MBPS / -40 C~+85 C / RoHS / 1.2 V / TRAY / 171 pcs |
| IS42S32160F-7BL |
ISSI/矽成 |
SDRAM |
1,023
|
SDRAM / 16MX32 SD / FBGA-90 / 143 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY |
| S34MS08G201BHI020 |
SKYHIGH |
FLASH-NAND |
36,670
|
FLASH-NAND / 1GX8 NAND SLC / BGA-63 / 45 NS / -40 C~+85 C / RoHS / 1.8 V / TRAY / 2100 pcs |
| IS42VS32200E-75TLI |
ISSI/矽成 |
SDRAM-LP |
150
|
SDRAM-LP / 2MX32 SD / TSOP2(86) / 133 MHZ / -40 C~+85 C / RoHS / 1.8 V / TRAY / EOL |
| IS45S16160D-7TLA1 |
ISSI/矽成 |
SDRAM |
9,723
|
SDRAM / 16MX16 SD / TSOP2(54) / 143 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 1080 pcs |
| S34ML01G100BHI003 |
SKYHIGH |
FLASH-NAND |
2,300
|
FLASH-NAND / 128MX8 NAND SLC / BGA-63 / 25 NS / -40 C~+85 C / RoHS / 3.3 V / TAPE ON REEL / EOL / 2300 pcs |
| IS43TR81280A-15GBL |
ISSI/矽成 |
DDR3 SDRAM |
14,617
|
DDR3 SDRAM / 128MX8 DDR3 / FBGA-78 / 1333 MBPS / 0 C~+85 C / RoHS / 1.5 V / TRAY / EOL / 2420 pcs |
| IS42VM16160D-8TLI |
ISSI/矽成 |
SDRAM MOBILE |
12,786
|
SDRAM MOBILE / 16MX16 SD / TSOP2(54) / 125 MHZ / -40 C~+85 C / RoHS / 1.8 V / TRAY / EOL |
| IS42VM16160D-8TLI-TR |
ISSI/矽成 |
SDRAM MOBILE |
13,498
|
SDRAM MOBILE / 16MX16 SD / TSOP2(54) / 125 MHZ / -40 C~+95 C / RoHS / 1.8 V / TAPE ON REEL / EOL |
| IS42S32160C-75BL |
ISSI/矽成 |
SDRAM |
1,080
|
SDRAM / 16MX32 SD / FBGA-90 / 133 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 2400 pcs |