图片仅供参考
制造商IC编号 | K4T1G084QJ-BIE7 |
厂牌 | SAMSUNG/三星 |
IC 类别 | DDR2 SDRAM |
IC代码 | 128MX8 DDR2 |
共通IC编号 | K4T1G084QJ-BIE7000 |
K4T1G084QJ-BIE70CV | |
K4T1G084QJ-BIE7T | |
K4T1G084QJ-BIE7T00 | |
K4T1G084QJ-BIE7TCV |
脚位/封装 | FBGA-60 |
外包装 | |
无铅/环保 | 无铅/环保 |
电压(伏) | 1.8 V |
温度规格 | -40 C~+85 C |
速度 | 800 MBPS |
标准包装数量 | |
标准外箱 | |
Number Of Words | 128M |
Bit Organization | x8 |
Density | 1G |
Internal Banks | 8 Banks |
Generation | 11th Generation |
Power | Normal Power |
IC 编号 | 数量 | 生产年份 | |
---|---|---|---|
K4T1G084QJ-BIE7 | 200 | 索取报价 | |
K4T1G084QJ-BIE7TCV | 5,371 | 索取报价 | |
K4T1G084QJ-BIE7000 | 0 | 索取报价 | |
K4T1G084QJ-BIE7TCV | 5,371 | 22+ | 索取报价 |
K4T1G084QJ-BIE70CV | 7,975 | 索取报价 | |
K4T1G084QJ-BIE7 | 40,985 | 索取报价 | |
K4T1G084QJ-BIE7TCV | 2,000 | 索取报价 | |
K4T1G084QJ-BIE7TCV | 50,000 | 2018+ | 索取报价 |
K4T1G084QJ-BIE7 | 28 | 索取报价 | |
K4T1G084QJ-BIE7000 | 50,000 | 索取报价 |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
H5PS1G83JFR-S5I 13K | FBGA-60 | 1.8 V | 800 MBPS | -40 C~+85 C |
H5PS1G83JFR-S6IR | FBGA-60 | 1.8 V | 800 MBPS | -40 C~+85 C |
H5PS1G83KFR-S5IR | FBGA-60 | 1.8 V | 800 MBPS | -40 C~+85 C |
IS43DR81280A-25DBLI | FBGA-60 | 1.8 V | 800 MBPS | -40 C~+85 C |
IS43DR81280A-25EBLI | FBGA-60 | 1.8 V | 800 MBPS | -40 C~+85 C |
IS43DR81280B-25DBI | FBGA-60 | 1.8 V | 800 MBPS | -40 C~+85 C |
IS43DR81280B-25DBLI | FBGA-60 | 1.8 V | 800 MBPS | -40 C~+85 C |
IS43DR81280B-25EBLI | FBGA-60 | 1.8 V | 800 MBPS | -40 C~+85 C |
IS43DR81280C-25DBLI | FBGA-60 | 1.8 V | 800 MBPS | -40 C~+85 C |
IS46DR81280A-25DBLA1 | FBGA-60 | 1.8 V | 800 MBPS | -40 C~+85 C |