图片仅供参考
| 制造商IC编号 | K4T1G084QJ-BIE7 |
| 厂牌 | SAMSUNG/三星 |
| IC 类别 | DDR2 SDRAM |
| IC代码 | 128MX8 DDR2 |
| 共通IC编号 | K4T1G084QJ-BIE7000 |
| K4T1G084QJ-BIE70CV | |
| K4T1G084QJ-BIE7T | |
| K4T1G084QJ-BIE7T00 | |
| K4T1G084QJ-BIE7TCV |
| 脚位/封装 | FBGA-60 |
| 外包装 | |
| 无铅/环保 | 无铅/环保 |
| 电压(伏) | 1.8 V |
| 温度规格 | -40 C~+85 C |
| 速度 | 800 MBPS |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 128M |
| Bit Organization | x8 |
| Density | 1G |
| Internal Banks | 8 Banks |
| Power | Normal Power |
| Generation | 11th Generation |
| IC 编号 | 数量 | 生产年份 | |
|---|---|---|---|
| K4T1G084QJ-BIE7TCV | 6,000 | 17+ | 索取报价 |
| K4T1G084QJ-BIE7TCV | 0 | 24+ | 索取报价 |
| K4T1G084QJ-BIE7 | 200 | 索取报价 | |
| K4T1G084QJ-BIE7TCV | 5,371 | 索取报价 | |
| K4T1G084QJ-BIE7000 | 0 | 索取报价 | |
| K4T1G084QJ-BIE7TCV | 5,371 | 22+ | 索取报价 |
| K4T1G084QJ-BIE70CV | 7,975 | 索取报价 | |
| K4T1G084QJ-BIE7 | 40,985 | 索取报价 | |
| K4T1G084QJ-BIE7TCV | 2,000 | 索取报价 | |
| K4T1G084QJ-BIE7TCV | 50,000 | 2018+ | 索取报价 |
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| AS4C128M8D2-25BIN | FBGA-60 | 1.8 V | 800 MBPS | -40 C~+85 C |
| AS4C128M8D2-25BIN(XXPART) | FBGA-60 | 1.8 V | 800 MBPS | -40 C~+85 C |
| AS4C128M8D2-25BINTR | FBGA-60 | 1.8 V | 800 MBPS | -40 C~+85 C |
| AS4C128M8D2A-25BIN | FBGA-60 | 1.8 V | 800 MBPS | -40 C~+85 C |
| AS4C128M8D2A-25BINTR | FBGA-60 | 1.8 V | 800 MBPS | -40 C~+85 C |
| H5PS1G83JFR-S5I 13K | FBGA-60 | 1.8 V | 800 MBPS | -40 C~+85 C |
| H5PS1G83JFR-S6IR | FBGA-60 | 1.8 V | 800 MBPS | -40 C~+85 C |
| H5PS1G83KFR-S5IR | FBGA-60 | 1.8 V | 800 MBPS | -40 C~+85 C |
| IS43DR81280A-25DBLI | FBGA-60 | 1.8 V | 800 MBPS | -40 C~+85 C |
| IS43DR81280A-25EBLI | FBGA-60 | 1.8 V | 800 MBPS | -40 C~+85 C |