圖片僅供參考
製造商IC編號 | K4T1G084QJ-BIE7 |
廠牌 | SAMSUNG/三星 |
IC 類別 | DDR2 SDRAM |
IC代碼 | 128MX8 DDR2 |
共通IC編號 | K4T1G084QJ-BIE7000 |
K4T1G084QJ-BIE70CV | |
K4T1G084QJ-BIE7T | |
K4T1G084QJ-BIE7T00 | |
K4T1G084QJ-BIE7TCV |
脚位/封装 | FBGA-60 |
外包裝 | |
無鉛/環保 | 無鉛/環保 |
電壓(伏) | 1.8 V |
溫度規格 | -40 C~+85 C |
速度 | 800 MBPS |
標準包裝數量 | |
標準外箱 | |
Number Of Words | 128M |
Bit Organization | x8 |
Density | 1G |
Internal Banks | 8 Banks |
Generation | 11th Generation |
Power | Normal Power |
IC 編號 | 數量 | 生產年份 | |
---|---|---|---|
K4T1G084QJ-BIE7 | 200 | 索取報價 | |
K4T1G084QJ-BIE7TCV | 5,371 | 索取報價 | |
K4T1G084QJ-BIE7000 | 0 | 索取報價 | |
K4T1G084QJ-BIE7TCV | 5,371 | 22+ | 索取報價 |
K4T1G084QJ-BIE70CV | 7,975 | 索取報價 | |
K4T1G084QJ-BIE7 | 40,985 | 索取報價 | |
K4T1G084QJ-BIE7TCV | 2,000 | 索取報價 | |
K4T1G084QJ-BIE7TCV | 50,000 | 2018+ | 索取報價 |
K4T1G084QJ-BIE7 | 28 | 索取報價 | |
K4T1G084QJ-BIE7000 | 50,000 | 索取報價 |
IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
---|---|---|---|---|
H5PS1G83JFR-S5I 13K | FBGA-60 | 1.8 V | 800 MBPS | -40 C~+85 C |
H5PS1G83JFR-S6IR | FBGA-60 | 1.8 V | 800 MBPS | -40 C~+85 C |
H5PS1G83KFR-S5IR | FBGA-60 | 1.8 V | 800 MBPS | -40 C~+85 C |
IS43DR81280A-25DBLI | FBGA-60 | 1.8 V | 800 MBPS | -40 C~+85 C |
IS43DR81280A-25EBLI | FBGA-60 | 1.8 V | 800 MBPS | -40 C~+85 C |
IS43DR81280B-25DBI | FBGA-60 | 1.8 V | 800 MBPS | -40 C~+85 C |
IS43DR81280B-25DBLI | FBGA-60 | 1.8 V | 800 MBPS | -40 C~+85 C |
IS43DR81280B-25EBLI | FBGA-60 | 1.8 V | 800 MBPS | -40 C~+85 C |
IS43DR81280C-25DBLI | FBGA-60 | 1.8 V | 800 MBPS | -40 C~+85 C |
IS46DR81280A-25DBLA1 | FBGA-60 | 1.8 V | 800 MBPS | -40 C~+85 C |