| K4B2G1646F-BYMA000 |
SAMSUNG/三星 |
DDR3L SDRAM |
13,328
|
DDR3L SDRAM / 128MX16 DDR3L / FBGA-96 / 1866 MBPS / 0 C~+85 C / RoHS / 1.35V / TRAY / 1120 pcs |
| IS49NLS18320A-18WBL |
ISSI/矽成 |
RLDRAM2 |
3,177
|
RLDRAM2 / 32MX18 RLD2 / WBGA-144 / 533 MHZ / 0 C~+85 C / RoHS / 1.5V/1.8V / TRAY / 104 pcs |
| K4T51163QN-BCE7000 |
SAMSUNG/三星 |
DDR2 SDRAM |
5,001
|
DDR2 SDRAM / 32MX16 DDR2 / FBGA-84 / 800 MBPS / 0 C~+95 C / RoHS / 1.8 V / TRAY / EOL / 1280 pcs 2.0 kg 38*19*11 cm |
| AT45DB081E-SHN-T |
DIALOG/ADESTO/戴樂格 |
DATA FLASH |
52,000
|
DATA FLASH / 45DB081 / SOIC-8 / 85 MHZ / -40 C~+85 C / RoHS / 1.70V~3.6V / TAPE ON REEL / 2000 pcs |
| M12L64322A-6TIG |
ESMT/EMP/晶豪 |
SDRAM |
843
|
SDRAM / 2MX32 SD / TSOP2(86) / 166 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / 1080 pcs |
| IS42SM16800H-75BLI |
ISSI/矽成 |
SDRAM MOBILE |
522
|
SDRAM MOBILE / 8MX16 SD / FBGA-54 / 133 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / 348 pcs |
| MT47H32M16NF-25E IT:H TR |
MICRON/美光 |
DDR2 SDRAM |
30,000
|
DDR2 SDRAM / 32MX16 DDR2 / FBGA-84 / 800 MBPS / -40 C~+85 C / RoHS / 1.8 V / TAPE ON REEL / 2000 pcs 1.0 kg 36*34*6 cm |
| M27C801-100K1 (ROHS) |
STM/意法半导体 |
OTPROM |
4,752
|
OTPROM / 27C080 / PLCC-32 / 80 MHZ / 0 C~+70 C / RoHS / 5.0 V / TUBE / EOL / 320 pcs |
| IS42S16160D-7BLI |
ISSI/矽成 |
SDRAM |
3,397
|
SDRAM / 16MX16 SD / FBGA-54 / 143 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 2400 pcs 2.0 kg 37*16*9 cm |
| IS42S32400F-7BLI |
ISSI/矽成 |
SDRAM |
4,048
|
SDRAM / 4MX32 SD / FBGA-90 / 143 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / 2400 pcs 2.0 kg 37*16*9 cm |
| MX30LF1G18AC-TI |
MACRONIX/MXIC/旺宏 |
FLASH-NAND |
56,650
|
FLASH-NAND / 128MX8 NAND SLC / TSOP-48 / 25 NS / -40 C~+85 C / RoHS / 2.7V~3.6V / TRAY / 960 pcs 2.08 kg 38*16*9 cm |
| IS43DR32160C-3DBL |
ISSI/矽成 |
DDR2 SDRAM |
3,151
|
DDR2 SDRAM / 16MX32 DDR2 / FBGA-126 / 333 MHZ / 0 C~+85 C / RoHS / 1.8 V / TRAY / 162 pcs |
| IS62WV2568BLL-55TLI-TR |
ISSI/矽成 |
SRAM-ASYNC |
40,500
|
SRAM-ASYNC / 256KX8 SRAM / TSOP-32 / 55 NS / -40 C~+85 C / RoHS / 1.65V-3.6V / TAPE ON REEL / 1500 pcs 1.5 kg 36*34*6 cm |
| IS61LV6416-10BLI |
ISSI/矽成 |
SRAM |
1,365
|
SRAM / 64KX16 FAST / BGA-48 / 10 NS / -40 C~+85 C / RoHS / 3.3 V / TRAY / 4800 pcs 2.0 kg 16*9*18 cm |
| S34MS02G200GHI000 |
SKYHIGH |
FLASH-NAND |
25,303
|
FLASH-NAND / 256MX8 NAND SLC / BGA-67 / 45 NS / -40 C~+85 C / RoHS / 1.8 V / TRAY / EOL / 90 pcs |
| S40FC002C1B2I00000 |
SKYHIGH |
FLASH-EMMC |
46,315
|
FLASH-EMMC / 2GB EMMC / FBGA-153 / 52 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / 225 pcs |
| S40FC004C1B1I00014 |
SKYHIGH |
FLASH-EMMC |
45,418
|
FLASH-EMMC / 4GB EMMC / FBGA-153 / 52 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / 1710 pcs |
| S40FC004C1B1C00030 |
SKYHIGH |
FLASH-EMMC |
1,209
|
FLASH-EMMC / 4GB EMMC / FBGA-153 / 52 MHZ / 0 C~+70 C / RoHS / 3.3 V / TAPE ON REEL |
| S34MS08G201BHI020 |
SKYHIGH |
FLASH-NAND |
36,670
|
FLASH-NAND / 1GX8 NAND SLC / BGA-63 / 45 NS / -40 C~+85 C / RoHS / 1.8 V / TRAY / 210 pcs |
| S34MS04G204BHI010 |
SKYHIGH |
FLASH-NAND |
2,049
|
FLASH-NAND / 256MX16 NAND SLC / BGA-63 / 45 NS / -40 C~+85 C / RoHS / 1.8 V / TRAY / EOL |
| S34MS02G100BHI000 |
SKYHIGH |
FLASH-NAND |
73,778
|
FLASH-NAND / 256MX8 NAND SLC / BGA-63 / 45 NS / -40 C~+85 C / RoHS / 1.8 V / TRAY / 2100 pcs |
| S34MS01G200TFI900 |
SKYHIGH |
FLASH-NAND |
2,718
|
FLASH-NAND / 128MX8 NAND SLC / TSOP-48 / 45 NS / -40 C~+85 C / RoHS / 1.8 V / TRAY |
| S34MS01G200GHI000 |
SKYHIGH |
FLASH-NAND |
16,434
|
FLASH-NAND / 128MX8 NAND SLC / BGA-67 / 45 NS / -40 C~+85 C / RoHS / 1.8 V / TRAY |
| S34ML16G303TFV000 |
SKYHIGH |
FLASH-NAND |
2,037
|
FLASH-NAND / 2GX8 NAND SLC / TSOP-48 / 45 NS / -40 C~+105 C / RoHS / 3.3 V / TRAY |
| S34ML08G301TFI100 |
SKYHIGH |
FLASH-NAND |
23,944
|
FLASH-NAND / 1GX8 NAND SLC / TSOP-48 / 25 NS / -40 C~+85 C / RoHS / 3.3 V / TRAY / 960 pcs |