| K4B1G1646I-BCK0000 |
SAMSUNG/三星 |
DDR3 SDRAM |
12,627
|
DDR3 SDRAM / 64MX16 DDR3 / FBGA-96 / 800 MHZ / 0 C~+95 C / RoHS / 1.5 V / TRAY / 1120 pcs 2.0 kg 38*19*11 cm |
| K4B2G1646F-BCK0T00 |
SAMSUNG/三星 |
DDR3 SDRAM |
70,000
|
DDR3 SDRAM / 128MX16 DDR3 / FBGA-96 / 800 MHZ / 0 C~+85 C / RoHS / 1.5 V / TAPE ON REEL / 2000 pcs 1.0 kg 36*34*7 cm |
| MP1921HS-A-LF-Z |
MPS/芯源 |
GATE DRIVER |
72,500
|
GATE DRIVER / MP1921 / SOIC-8 / 500 KHZ / -40 C~+125 C / RoHS / 9V~18V / TAPE ON REEL / 2500 pcs |
| MX30UF1G16AC-XKI TR |
MACRONIX/MXIC/旺宏 |
FLASH-NAND |
6,000
|
FLASH-NAND / 64MX16 NAND SLC / FBGA-63 / 25NS / -40 C~+85 C / RoHS / 1.70-1.95V / TAPE ON REEL |
| MX30LF4G28AC-TI/TR |
MACRONIX/MXIC/旺宏 |
FLASH-NAND |
18,000
|
FLASH-NAND / 512MX8 NAND SLC / TSOP-48 / 1 MHZ / -40 C~+85 C / RoHS / 2.7V~3.6V / TAPE ON REEL / 1500 pcs 1.0 kg 39*36*6 cm |
| IS45S16160D-7BLA1 |
ISSI/矽成 |
SDRAM-AUTO |
4,827
|
SDRAM-AUTO / 16MX16 SD / FBGA-54 / 143 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 2400 pcs |
| MT48LC16M16A2P-6AIT:G TR |
MICRON/美光 |
SDRAM |
10,000
|
SDRAM / 16MX16 SD / TSOP2(54) / 167 MHZ / -40 C~+85 C / RoHS / 3.3 V / TAPE ON REEL / 2000 pcs 2.32 kg 36*34*6 cm |
| IS43DR16320B-3DBL |
ISSI/矽成 |
DDR2 SDRAM |
41,580
|
DDR2 SDRAM / 32MX16 DDR2 / FBGA-84 / 333 MHZ / 0 C~+85 C / RoHS / 1.8 V / TRAY / EOL / 1360 pcs 2.0 kg 37*16*9 cm |
| LPC2478FBD208K |
NXP/恩智浦 |
MCU-ARM |
2,340
|
MCU-ARM / LPC2478 / LQFP-208 / 72 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / 180 pcs |
| V62C51864L-35P |
MOSEL-VITELIC |
SRAM |
34,782
|
SRAM / 8KX8 SRAM / PDIP-28 / 35 NS / 0 C~+70 C / Leaded / 5 V / TUBE / 650 pcs 5.0 kg 24*8*51 cm |
| K4B4G0846D-BCK0000 |
SAMSUNG/三星 |
DDR3 SDRAM |
7,680
|
DDR3 SDRAM / 512MX8 DDR3 / FBGA-78 / 800 MHZ / 0 C~+85 C / RoHS / 1.5 V / TRAY / EOL / 1280 pcs 2.0 kg 39*19*11 cm |
| LPC2138FBD64/01,15 |
NXP/恩智浦 |
MCU |
160
|
MCU / LPC2138 / LQFP-64 / 60 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / 160 pcs 0.46 kg 33*15*2 cm |
| K4B2G0846F-BCK0T00 |
SAMSUNG/三星 |
DDR3 SDRAM |
4,000
|
DDR3 SDRAM / 256MX8 DDR3 / FBGA-78 / 800 MHZ / 0 C~+85 C / RoHS / 1.5 V / TAPE ON REEL / 2000 pcs 2.0 kg 38*19*11 cm |
| AP-MSD08GIA-1HTM |
APACER/宇瞻 |
MEMORY CARD-MICRO-SDHC |
1,520
|
MEMORY CARD-MICRO-SDHC / 8GB MICRO-SD / -40 C~+85 C / RoHS / 3.3 V / TRAY / 120 pcs |
| S34ML04G100TFI000 |
SKYHIGH/ CYPRESS |
FLASH-NAND |
22,944
|
FLASH-NAND / 512MX8 NAND SLC / TSOP-48 / 25NS / -40 C~+85 C / RoHS / 3.3 V / TRAY / 960 pcs 2.5 kg 40*19*12 cm |
| MX29F040CTI-70G |
MACRONIX/MXIC/旺宏 |
FLASH-NOR |
7,800
|
FLASH-NOR / 29F040 / TSOP-32 / 70 NS / -40 C~+85 C / RoHS / 5 V / TRAY / 1560 pcs 2.11 kg 36*16*9 cm |
| S34ML02G200TFI000 |
SKYHIGH/ CYPRESS |
FLASH-NAND |
32,640
|
FLASH-NAND / 256MX8 NAND SLC / TSOP-48 / 25NS / -40 C~+85 C / RoHS / 3.3 V / TRAY / 960 pcs |
| M27C801-100K1 (ROHS) |
STM/意法半导体 |
OTPROM |
4,752
|
OTPROM / 27C080 / PLCC-32 / 100 NS / 0 C~+70 C / RoHS / 5 V / TUBE / EOL / 320 pcs |
| MX29F040CQI-70G |
MACRONIX/MXIC/旺宏 |
FLASH-NOR |
6,720
|
FLASH-NOR / 29F040 / PLCC-32 / 70 NS / -40 C~+85 C / RoHS / 5 V / TUBE / 2240 pcs 4.9 kg 61*16*10 cm |
| LPC1769FBD100,551 |
NXP/恩智浦 |
MCU-ARM |
900
|
MCU-ARM / LPC1769 / LQFP-100 / 120MHZ / -40 C~+85 C / RoHS / 2.4V~3.6V / TRAY / 90 pcs 0.6 kg 35,5*18,5*4,5 cm |
| K4T1G164QF-BCE6000 |
SAMSUNG/三星 |
DDR2 SDRAM |
8,020
|
DDR2 SDRAM / 64MX16 DDR2 / FBGA-84 / 333 MHZ / 0 C~+85 C / RoHS / 1.8 V / TRAY / EOL / 1280 pcs |
| HY628100BLLG-70 |
SK HYNIX/海力士 |
SRAM |
1,161
|
SRAM / 128KX8 SLOW / SOP-32 / 70 NS / 0 C~+70 C / Leaded / 5 V / TAPE ON REEL / 1000 pcs |
| K4M641633K-BN75000 |
SAMSUNG/三星 |
SDRAM MOBILE |
35,201
|
SDRAM MOBILE / 4MX16 SD / FBGA-54 / 133 MHZ / -25 C~+85 C / RoHS / 3.0V/3.3V / TRAY / EOL / 1280 pcs 2.4 kg 38*19*11 cm |
| S29GL064N-90TFI040 |
INFINEON/英飞凌 |
FLASH-MIRRORBIT |
1,916
|
FLASH-MIRRORBIT / 29GL064N / TSOP-48 / 90 NS / -40 C~+85 C / RoHS / 2.7V~3.6V / TRAY / 960 pcs 2.38 kg 39*19*12 cm |
| MT45W2MW16PGA-70IT |
MICRON/美光 |
SRAM-PSEUDO |
68,000
|
SRAM-PSEUDO / 2MX16 PSEUDO / FBGA-48 / 70 NS / -40 C~+85 C / RoHS / 1.8 V / TAPE ON REEL / EOL / 1000 pcs |