庫存列表


IC 編號 廠牌 IC 類別 數量 備忘錄
M27C512-10F1(ROHS) STM/意法半导体 EPROM 3,640 EPROM / 27C512 / DIP-28 / 100NS / 0 C~+70 C / RoHS / 5 V / TUBE / EOL / 260 pcs 3.0 kg 55*9*7 cm
MT48LC32M16A2P-75:C MICRON/美光 SDRAM 5,143 SDRAM / 32MX16 SD / TSOP2 / 0 ~ 70 C / RoHS / 3.3 V / TRAY / EOL / 1000 pcs
MX25L12873FM2I-10G TR MACRONIX/MXIC/旺宏 FLASH-SPI 24,000 FLASH-SPI / 25L12873 / SOP-8 / 104 MHZ / -40 C~+85 C / RoHS / 3.0V / TAPE ON REEL / 2000 pcs 6.4 kg 41*34*39 cm
MX25L6450FM2I-10G-TR MACRONIX/MXIC/旺宏 FLASH-SPI 48,000 FLASH-SPI / 25L6450 / SOP-8 / 104 MHZ / -45 C ~ 85 C / RoHS / 3.0V / TAPE ON REEL / 2000 pcs 1.1 kg 39*36*6 cm
M27C801-100K1 (ROHS) STM/意法半导体 OTPROM 16,512 OTPROM / 27C080 / PLCC-32 / 100NS / 0 C~+70 C / RoHS / 5 V / TUBE / EOL / 320 pcs
MX25L12850FM2I-10G TR MACRONIX/MXIC/旺宏 FLASH-SPI 28,000 FLASH-SPI / 25L12850 / SOP-8 / 104 MHZ / -40 C~+85 C / RoHS / 3.0V / TAPE ON REEL / 2000 pcs
MX29F400CBTI-70G MACRONIX/MXIC/旺宏 FLASH-NOR 10,560 FLASH-NOR / 29F400 BOTTOM / TSOP-48 / 70 NS / -40 C~+85 C / RoHS / 5 V / TRAY / 960 pcs 2.1 kg 35*16*9 cm
K4B2G1646F-BCK0T00 SAMSUNG/三星 DDR3 SDRAM 200,000 DDR3 SDRAM / 128MX16 DDR3 / FBGA-96 / 800 MHZ / 0 C~+85 C / RoHS / 1.5 V / TAPE ON REEL / EOL / 2000 pcs 1.0 kg 36*34*7 cm
MX25L8006EM1I-12G/TR MACRONIX/MXIC/旺宏 FLASH-SPI 22,500 FLASH-SPI / 25L8006 / SOP-16 / 86 MHZ / -40 C~+85 C / RoHS / 3.0V / TAPE ON REEL / 2500 pcs 0.0 kg 38*36*6 cm
MX29GL128FDT2I-90G TR MACRONIX/MXIC/旺宏 FLASH-NOR 20,000 FLASH-NOR / 29LV128 / TSOP / -40 C~+85 C / RoHS / 3.3 V / TAPE ON REEL / 1000 pcs
AT45DB161E-SHD-T ADESTO DATA FLASH 18,000 DATA FLASH / 45DB161 / SOIC / -40 C~+85 C / RoHS / 2.5V-3.6V / TAPE ON REEL / 2000 pcs 0.0 kg 37*36*6 cm
K4B2G1646F-BCNBT00 SAMSUNG/三星 DDR3 SDRAM 83,980 DDR3 SDRAM / 128MX16 DDR3 / FBGA-96 / 2133(MT/S) / 0 C~+95 C / RoHS / 1.5 V / TAPE ON REEL / 2000 pcs 99.99 kg 38*36*7 cm
W25Q128BVEIG WINBOND/華邦 FLASH-SPI 260 FLASH-SPI / 25Q128 / WSON-8(8X6MM) / -40 C~+85 C / RoHS / 2.7V-3.6V / EOL
MX29F040CTI-70G MACRONIX/MXIC/旺宏 FLASH-NOR 9,360 FLASH-NOR / 29F040 / TSOP-32 / 70 NS / -40 C~+85 C / RoHS / 5 V / TRAY / 1560 pcs 2.11 kg 36*16*9 cm
K4X1G323PF-8GD8000 SAMSUNG/三星 DDR1 MOBILE 5,600 DDR1 MOBILE / 32MX32 MDDR1 / FBGA-90 / 200 MHZ / -25 C~+85 C / RoHS / 1.8 V / TRAY / 1120 pcs
TC58NVM9S3ETA00 KIOXIA/鎧俠 FLASH-NAND 57,060 FLASH-NAND / 64MX8 NAND SLC / TSOP-48 / 25 NS / 0 ~ 70 C / RoHS / 2.7V-3.6V / TRAY / EOL / 480 pcs
K4S643232H-UC70T00 SAMSUNG/三星 SDRAM 4,000 SDRAM / 2MX32 SD / TSOP2(86) / 143 MHZ / 0 C~+85 C / RoHS / 3.3 V / TAPE ON REEL / 2000 pcs 2.4 kg 36*35*7 cm
STM32F103VET6 STM/意法半导体 MCU 10,260 MCU / 32F103 / LQFP / -40 C~+85 C / RoHS / 2 V TO 3.6 / TRAY / 540 pcs 1.0 kg 38*21*10 cm
K4S281632O-LI75T00 SAMSUNG/三星 SDRAM 88,000 SDRAM / 8MX16 SD / TSOP2(54) / 133 MHZ / -40 C~+85 C / RoHS / 3.3 V / TAPE ON REEL / EOL / 2000 pcs 2.6 kg 36*35*7 cm
M27C200170XF1(ROHS) STM/意法半导体 EPROM 1,760 EPROM / 27C020 / DIP-28 / 70 NS / 0 C~+70 C / RoHS / 5 V / TUBE / 240 pcs 3.11 kg 55*9*7 cm
K4B1G1646I-BCK0000 SAMSUNG/三星 DDR3 SDRAM 4,480 DDR3 SDRAM / 64MX16 DDR3 / FBGA-96 / 800 MHZ / 0 C~+95 C / RoHS / 1.5 V / TRAY / 1120 pcs 2.0 kg 38*19*11 cm
MX25L6406EM2I-12G MACRONIX/MXIC/旺宏 FLASH-SPI 4,772 FLASH-SPI / 25FL064 / SOP-8 / 86 MHZ / -40 C~+85 C / RoHS / 3.0V / TUBE / 2024 pcs 1.6 kg 61*16*10 cm
SD-C04G2T2 TOSHIBA/東芝 MEMORY CARD-MICRO-SDHC 8,400 MEMORY CARD-MICRO-SDHC / 4GB MICRO-SD / -25 C~+85 C / RoHS / EOL / 600 pcs 1.0 kg 36*16*5 cm
K9F2G08U0D-SIB0000 SAMSUNG/三星 FLASH-NAND 960 FLASH-NAND / 256MX8 NAND SLC / TSOP-48 / -40 C~+85 C / RoHS / 2.7V-3.6V / TRAY / EOL / 960 pcs 2.0 kg 39*19*11 cm
KLM4G1YEMD-B031 SAMSUNG/三星 FLASH-EMMC 12 FLASH-EMMC / 4GB EMMC / FBGA-153 / RoHS / TRAY / EOL / 1120 pcs