| K4B1G1646I-BCK0000 |
SAMSUNG/三星 |
DDR3 SDRAM |
17,920
|
DDR3 SDRAM / 64MX16 DDR3 / FBGA-96 / 800 MHZ / 0 C~+95 C / RoHS / 1.5 V / TRAY / 1120 pcs 2.0 kg 38*19*11 cm |
| SPC5605BK0MLL6R |
NXP/恩智浦 |
MCU |
604
|
MCU / SPC5605 / LQFP-100 / 64MHZ / RoHS |
| UPD70F3373M2GKA-GAK-E3-QS-AX |
RENESAS/瑞萨 |
MCU |
7,463
|
MCU / 70F3373 / LQFP / -40 C~+85 C / RoHS / TAPE ON REEL / 1000 pcs |
| MT41K64M16TW-107:JTR |
MICRON/美光 |
DDR3L SDRAM |
4,000
|
DDR3L SDRAM / 64MX16 DDR3L / FBGA-96(8*14MM) / 1866(MT/S) / 0 C~+85 C / RoHS / 1.35V / TAPE ON REEL / 2000 pcs |
| K4E6E304EC-EGCG000 |
SAMSUNG/三星 |
DDR3 MOBILE |
2,240
|
DDR3 MOBILE / 512MX32 MDDR3 / FBGA-178 / 2133(MT/S) / -25 C~+85 C / RoHS / 1.8V/1.2V/ / TRAY / 1120 pcs 2.0 kg 38*19*11 cm |
| M27C512-10F1(ROHS) |
STM/意法半导体 |
EPROM |
3,120
|
EPROM / 27C512 / DIP-28 / 100 NS / 0 C~+70 C / RoHS / 5 V / TUBE / EOL / 260 pcs 3.0 kg 55*9*7 cm |
| K4B2G0846F-BCMAT00 |
SAMSUNG/三星 |
DDR3 SDRAM |
36,000
|
DDR3 SDRAM / 256MX8 DDR3 / FBGA-78 / 1866(MT/S) / 0 C~+85 C / RoHS / 1.5 V / TAPE ON REEL / 2000 pcs 1.0 kg 36*34*7 cm |
| L9952XPTR-S |
STM/意法半导体 |
PMIC/POWER MANAGEMENT |
1,000
|
PMIC/POWER MANAGEMENT / L9952 / PSSO-36 / RoHS / TAPE ON REEL |
| MC10XS3535JHFKR2 |
NXP/恩智浦 |
POWER SWITCH |
10,800
|
POWER SWITCH / 10XS3535 / PQFN-24 / RoHS / 12 V / TAPE ON REEL |
| MC33910G5ACR2 |
NXP/恩智浦 |
TRANSCEIVER |
8,000
|
TRANSCEIVER / MC33910 / LQFP-32 / -40 C~+125 C / RoHS / 5 V / TAPE ON REEL / 2000 pcs |
| S9S08AW48E7CPUER |
NXP/恩智浦 |
MCU |
9,000
|
MCU / 9S08 / LQFP-64 / 40 MHZ / -40 C~+125 C / RoHS / 2.7V-5.5V / TAPE ON REEL |
| MC35XS3500DHFKR2 |
NXP/恩智浦 |
POWER SWITCH |
1,200
|
POWER SWITCH / 35XS3500 / PQFN-24 / -40 C~+125 C / RoHS / 7V~20V / TRAY / 1200 pcs |
| HY628100BLLG-70 |
SK HYNIX/海力士 |
SRAM |
974
|
SRAM / 128KX8 SLOW / SOP / 70 NS / Leaded / 5 V / TAPE ON REEL / 1000 pcs |
| AT25DF321A-MH-Y |
ADESTO |
FLASH-SPI |
7,030
|
FLASH-SPI / 25DF321 / UDFN-8 / 85 MHZ / -40 C~+85 C / RoHS / 2.7V-3.6V / TRAY / 570 pcs |
| IS43DR16640B-3DBLI |
ISSI/矽成 |
DDR2 SDRAM |
9,405
|
DDR2 SDRAM / 64MX16 DDR2 / FBGA-84 / 333 MHZ / -40 C~+85 C / RoHS / 1.8 V / TRAY / 2090 pcs 2.0 kg 32*36*9* cm |
| AT25DF081ASHB |
ADESTO |
FLASH-SPI |
8,910
|
FLASH-SPI / 25DF081 / SOIC-8 / 100MHZ / -40 C~+85 C / RoHS / 2.7V-3.6V / TUBE / 90 pcs |
| AT24C16CSSHMT |
MICROCHIP/微芯 |
EEPROM-2WIRE |
12,000
|
EEPROM-2WIRE / 24C16 / SOIC-8 / 1 MHZ / -40 C~+85 C / RoHS / 1.70V~5.5V / 4000 pcs |
| MT47H64M16NF-25E:M TR |
MICRON/美光 |
DDR2 SDRAM |
4,000
|
DDR2 SDRAM / 64MX16 DDR2 / FBGA-84 / 800(MT/S) / 0 C~+85 C / RoHS / 1.8 V / TAPE ON REEL / 2000 pcs 1.0 kg 36*34,5*6 cm |
| AT93C46DN-SH-T |
MICROCHIP/微芯 |
EEPROM |
14,000
|
EEPROM / 93C46 / SOIC-8 / 1 MHZ / -40 C~+85 C / RoHS / 1.8V-5.5 V / TAPE ON REEL / 4000 pcs |
| AT24C128C-XHM-T |
MICROCHIP/微芯 |
EEPROM-2WIRE |
20,000
|
EEPROM-2WIRE / 24C128 / TSSOP / 1 MHZ / -40 C~+85 C / RoHS / 1.70V~5.5V / TAPE ON REEL / 5000 pcs |
| AT25DF041B-MHN-T |
MICROCHIP/微芯 |
FLASH-SPI |
24,000
|
FLASH-SPI / 25DF041 / UDFN-8 / 104MHZ / -40 C~+85 C / RoHS / 1.65V-3.6V / TAPE ON REEL / 6000 pcs 1.0 kg 36*34*5 cm |
| AT45DB161E-SSHD-T |
ADESTO |
DATA FLASH |
24,000
|
DATA FLASH / 45DB161 / SOIC-8 / 85 MHZ / -40 C~+85 C / RoHS / 2.5V-3.6V / TAPE ON REEL / 4000 pcs |
| AT25DF081A-SSH-T |
ADESTO |
FLASH-SPI |
16,000
|
FLASH-SPI / 25DF081 / SOIC-8 / 100MHZ / -40 C~+85 C / RoHS / 2.7V-3.6V / TAPE ON REEL / 4000 pcs |
| AT45DB161E-MHD-Y |
ADESTO |
DATA FLASH |
33,980
|
DATA FLASH / 45DB161 / UDFN-8 / 85 MHZ / -40 C~+85 C / RoHS / 2.5V-3.6V / TRAY / 570 pcs |
| AT45DB021E-SHN-T |
ADESTO |
DATA FLASH |
40,000
|
DATA FLASH / 45DB021 / SOIC-8 / -45 C ~ 85 C / RoHS / 1.65V-3.6V / TAPE ON REEL / 2000 pcs |