庫存列表


IC 編號 廠牌 IC 類別 數量 備忘錄
K4B2G1646F-BMMA000 SAMSUNG/三星 DDR3L SDRAM 7,840 DDR3L SDRAM / 128MX16 DDR3L / FBGA-96 / 933 MHZ / -40 C~+95 C / RoHS / 1.35V / TRAY / 1120 pcs
K4B4G1646E-BMMA000 SAMSUNG/三星 DDR3L SDRAM 4,930 DDR3L SDRAM / 256MX16 DDR3L / FBGA-96 / 933 MHZ / -40 C~+95 C / RoHS / 1.35V / TRAY / 1120 pcs
MX25L6433FMI-08G/TR MACRONIX/MXIC/旺宏 FLASH-SPI 3,000 FLASH-SPI / 64MB SPI / SOP-16 / 133 MHZ / -40 C~+85 C / RoHS / 3.3 V / TAPE ON REEL / 1000 pcs
DSPIC33CK256MP205-I/PT MICROCHIP/微芯 DIGITAL SIGNAL CONTROLLER 375 DIGITAL SIGNAL CONTROLLER / 33CK256 / TQFP-48 / 100 MHZ / -40 C~+85 C / RoHS / 3.0V~3.6V / TRAY / 250 pcs
MX30LF1G18AC-XKIT/R MACRONIX/MXIC/旺宏 FLASH-NAND 6,000 FLASH-NAND / 128MX8 NAND SLC / VFBGA-63 / 1 MHZ / -40 C~+85 C / RoHS / 2.7V~3.6V / TAPE ON REEL / 3000 pcs 1.0 kg 39*36*6 cm
M27C1001-45XB1(ROHS) STM/意法半导体 EPROM 8,280 EPROM / 27C010 / PDIP-28 / 45 NS / 0 C~+70 C / RoHS / 5 V / TUBE / EOL / 360 pcs
K4T1G084QJ-BCE7000 SAMSUNG/三星 DDR2 SDRAM 26,967 DDR2 SDRAM / 128MX8 DDR2 / FBGA-60 / 400 MHZ / 0 C~+95 C / RoHS / 1.8 V / TRAY / EOL / 1280 pcs 2.0 kg 38*19*11 cm
IS49RL36160-107EBL ISSI/矽成 RLDRAM3 652 RLDRAM3 / 16MX36 RLD3 / FBGA-168 / 933 MHZ / 0 C~+95 C / RoHS / 1.35V / TRAY / 119 pcs
IS46TR81280BL-125JBLA2 ISSI/矽成 DDR3L SDRAM 90 DDR3L SDRAM / 128MX8 DDR3L / FBGA-78 / 800 MHZ / -40 C~+105 C / RoHS / 1.35V / TRAY
IS45VM32400H-6BLA2-BM ISSI/矽成 SDRAM MOBILE 12 SDRAM MOBILE / 4MX32 SD / FBGA-90 / 166MHZ / -40 C~+105 C / RoHS / 1.8 V
IS43LD32640B-18BPL ISSI/矽成 LPDDR2 MOBILE 15 LPDDR2 MOBILE / 64MX32 LPDDR2 / FBGA-134 / 533 MHZ / 0 C~+85 C / RoHS / 1.2/1.8V
IS49RL36160-093EBL-BM ISSI/矽成 RLDRAM3 210 RLDRAM3 / 16MX36 RLD3 / FBGA-168 / 1066 MHZ / 0 C~+95 C / RoHS / 1.35V
IS49RL18320-125BL-BM ISSI/矽成 RLDRAM3 96 RLDRAM3 / 32MX18 RLD3 / FBGA-168 / 800 MHZ / 0 C~+95 C / RoHS / 1.35V
IS49RL36160-107EBL-BM ISSI/矽成 RLDRAM3 550 RLDRAM3 / 16MX36 RLD3 / FBGA-168 / 933 MHZ / 0 C~+95 C / RoHS / 1.35V
IS49RL36160-107EBLI ISSI/矽成 RLDRAM3 718 RLDRAM3 / 16MX36 RLD3 / FBGA-168 / 933 MHZ / -40 C~+95 C / RoHS / 1.35V / TRAY
IS43LR32320B-5BLI ISSI/矽成 LPDDR1 MOBILE 44,970 LPDDR1 MOBILE / 32MX32 LPDDR1 / FBGA-90 / 200 MHZ / -40 C~+95 C / RoHS / 1.8 V / TRAY
IS42SM16400M-6BLI ISSI/矽成 SDRAM MOBILE 7 SDRAM MOBILE / 4MX16 SD / FBGA-54 / 166MHZ / -40 C~+95 C / RoHS / 3.3 V / TRAY
IS42SM16200D-6BLI ISSI/矽成 SDRAM MOBILE 4 SDRAM MOBILE / 2MX16 SD / FBGA-54 / 166MHZ / -40 C~+95 C / RoHS / 3.3 V / TRAY
IS42S16160J-7BI ISSI/矽成 SDRAM 7 SDRAM / 16MX16 SD / FBGA-54 / 143 MHZ / -40 C~+85 C / Leaded / 3.3 V / TRAY
IS46TR16640B-15GBLA2 ISSI/矽成 DDR3 SDRAM 90 DDR3 SDRAM / 64MX16 DDR3 / FBGA-96 / 667 MHZ / -40 C~+105 C / RoHS / 1.5 V / TRAY / 190 pcs
IS46R83200F-6BA2-BM ISSI/矽成 DDR1 SDRAM 823 DDR1 SDRAM / 32MX8 DDR1 / BGA-60 / 166MHZ / -40 C~+105 C / Leaded / 2.5 V
IS43LD32800B-25BLI ISSI/矽成 LPDDR2 MOBILE 241 LPDDR2 MOBILE / 8MX32 LPDDR2 / FBGA / 400 MHZ / -40 C~+95 C / RoHS / 1.14V~1.95
IS43DR16640C-3DBI ISSI/矽成 DDR2 SDRAM 228 DDR2 SDRAM / 64MX16 DDR2 / FBGA-84 / 333 MHZ / -40 C~+85 C / Leaded / 1.8 V
IS43TR16640BL-107MBL ISSI/矽成 DDR3L SDRAM 2,661 DDR3L SDRAM / 64MX16 DDR3L / FBGA-96 / 933 MHZ / 0 C~+85 C / RoHS / 1.35V / TRAY / EOL
IS46DR16320D-3DBA2 ISSI/矽成 DDR2 SDRAM 1,356 DDR2 SDRAM / 32MX16 DDR2 / FBGA-84 / 333 MHZ / -40 C~+105 C / Leaded / 1.8 V / TRAY