IC 編號 | 廠牌 | IC 類別 | 數量 | 備忘錄 |
---|---|---|---|---|
K4B2G1646F-BMMA000 | SAMSUNG/三星 | DDR3L SDRAM | 7,840 | DDR3L SDRAM / 128MX16 DDR3L / FBGA-96 / 933 MHZ / -40 C~+95 C / RoHS / 1.35V / TRAY / 1120 pcs |
K4B4G1646E-BMMA000 | SAMSUNG/三星 | DDR3L SDRAM | 4,930 | DDR3L SDRAM / 256MX16 DDR3L / FBGA-96 / 933 MHZ / -40 C~+95 C / RoHS / 1.35V / TRAY / 1120 pcs |
MX25L6433FMI-08G/TR | MACRONIX/MXIC/旺宏 | FLASH-SPI | 3,000 | FLASH-SPI / 64MB SPI / SOP-16 / 133 MHZ / -40 C~+85 C / RoHS / 3.3 V / TAPE ON REEL / 1000 pcs |
DSPIC33CK256MP205-I/PT | MICROCHIP/微芯 | DIGITAL SIGNAL CONTROLLER | 375 | DIGITAL SIGNAL CONTROLLER / 33CK256 / TQFP-48 / 100 MHZ / -40 C~+85 C / RoHS / 3.0V~3.6V / TRAY / 250 pcs |
MX30LF1G18AC-XKIT/R | MACRONIX/MXIC/旺宏 | FLASH-NAND | 6,000 | FLASH-NAND / 128MX8 NAND SLC / VFBGA-63 / 1 MHZ / -40 C~+85 C / RoHS / 2.7V~3.6V / TAPE ON REEL / 3000 pcs 1.0 kg 39*36*6 cm |
M27C1001-45XB1(ROHS) | STM/意法半导体 | EPROM | 8,280 | EPROM / 27C010 / PDIP-28 / 45 NS / 0 C~+70 C / RoHS / 5 V / TUBE / EOL / 360 pcs |
K4T1G084QJ-BCE7000 | SAMSUNG/三星 | DDR2 SDRAM | 26,967 | DDR2 SDRAM / 128MX8 DDR2 / FBGA-60 / 400 MHZ / 0 C~+95 C / RoHS / 1.8 V / TRAY / EOL / 1280 pcs 2.0 kg 38*19*11 cm |
IS49RL36160-107EBL | ISSI/矽成 | RLDRAM3 | 652 | RLDRAM3 / 16MX36 RLD3 / FBGA-168 / 933 MHZ / 0 C~+95 C / RoHS / 1.35V / TRAY / 119 pcs |
IS46TR81280BL-125JBLA2 | ISSI/矽成 | DDR3L SDRAM | 90 | DDR3L SDRAM / 128MX8 DDR3L / FBGA-78 / 800 MHZ / -40 C~+105 C / RoHS / 1.35V / TRAY |
IS45VM32400H-6BLA2-BM | ISSI/矽成 | SDRAM MOBILE | 12 | SDRAM MOBILE / 4MX32 SD / FBGA-90 / 166MHZ / -40 C~+105 C / RoHS / 1.8 V |
IS43LD32640B-18BPL | ISSI/矽成 | LPDDR2 MOBILE | 15 | LPDDR2 MOBILE / 64MX32 LPDDR2 / FBGA-134 / 533 MHZ / 0 C~+85 C / RoHS / 1.2/1.8V |
IS49RL36160-093EBL-BM | ISSI/矽成 | RLDRAM3 | 210 | RLDRAM3 / 16MX36 RLD3 / FBGA-168 / 1066 MHZ / 0 C~+95 C / RoHS / 1.35V |
IS49RL18320-125BL-BM | ISSI/矽成 | RLDRAM3 | 96 | RLDRAM3 / 32MX18 RLD3 / FBGA-168 / 800 MHZ / 0 C~+95 C / RoHS / 1.35V |
IS49RL36160-107EBL-BM | ISSI/矽成 | RLDRAM3 | 550 | RLDRAM3 / 16MX36 RLD3 / FBGA-168 / 933 MHZ / 0 C~+95 C / RoHS / 1.35V |
IS49RL36160-107EBLI | ISSI/矽成 | RLDRAM3 | 718 | RLDRAM3 / 16MX36 RLD3 / FBGA-168 / 933 MHZ / -40 C~+95 C / RoHS / 1.35V / TRAY |
IS43LR32320B-5BLI | ISSI/矽成 | LPDDR1 MOBILE | 44,970 | LPDDR1 MOBILE / 32MX32 LPDDR1 / FBGA-90 / 200 MHZ / -40 C~+95 C / RoHS / 1.8 V / TRAY |
IS42SM16400M-6BLI | ISSI/矽成 | SDRAM MOBILE | 7 | SDRAM MOBILE / 4MX16 SD / FBGA-54 / 166MHZ / -40 C~+95 C / RoHS / 3.3 V / TRAY |
IS42SM16200D-6BLI | ISSI/矽成 | SDRAM MOBILE | 4 | SDRAM MOBILE / 2MX16 SD / FBGA-54 / 166MHZ / -40 C~+95 C / RoHS / 3.3 V / TRAY |
IS42S16160J-7BI | ISSI/矽成 | SDRAM | 7 | SDRAM / 16MX16 SD / FBGA-54 / 143 MHZ / -40 C~+85 C / Leaded / 3.3 V / TRAY |
IS46TR16640B-15GBLA2 | ISSI/矽成 | DDR3 SDRAM | 90 | DDR3 SDRAM / 64MX16 DDR3 / FBGA-96 / 667 MHZ / -40 C~+105 C / RoHS / 1.5 V / TRAY / 190 pcs |
IS46R83200F-6BA2-BM | ISSI/矽成 | DDR1 SDRAM | 823 | DDR1 SDRAM / 32MX8 DDR1 / BGA-60 / 166MHZ / -40 C~+105 C / Leaded / 2.5 V |
IS43LD32800B-25BLI | ISSI/矽成 | LPDDR2 MOBILE | 241 | LPDDR2 MOBILE / 8MX32 LPDDR2 / FBGA / 400 MHZ / -40 C~+95 C / RoHS / 1.14V~1.95 |
IS43DR16640C-3DBI | ISSI/矽成 | DDR2 SDRAM | 228 | DDR2 SDRAM / 64MX16 DDR2 / FBGA-84 / 333 MHZ / -40 C~+85 C / Leaded / 1.8 V |
IS43TR16640BL-107MBL | ISSI/矽成 | DDR3L SDRAM | 2,661 | DDR3L SDRAM / 64MX16 DDR3L / FBGA-96 / 933 MHZ / 0 C~+85 C / RoHS / 1.35V / TRAY / EOL |
IS46DR16320D-3DBA2 | ISSI/矽成 | DDR2 SDRAM | 1,356 | DDR2 SDRAM / 32MX16 DDR2 / FBGA-84 / 333 MHZ / -40 C~+105 C / Leaded / 1.8 V / TRAY |