| M27C512-10F1(ROHS) |
STM/意法半导体 |
EPROM |
3,640
|
EPROM / 27C512 / DIP-28 / 100NS / 0 C~+70 C / RoHS / 5 V / TUBE / EOL / 260 pcs 3.0 kg 55*9*7 cm |
| MT48LC32M16A2P-75:C |
MICRON/美光 |
SDRAM |
5,143
|
SDRAM / 32MX16 SD / TSOP2 / 0 ~ 70 C / RoHS / 3.3 V / TRAY / EOL / 1000 pcs |
| MX25L12873FM2I-10G TR |
MACRONIX/MXIC/旺宏 |
FLASH-SPI |
24,000
|
FLASH-SPI / 25L12873 / SOP-8 / 104 MHZ / -40 C~+85 C / RoHS / 3.0V / TAPE ON REEL / 2000 pcs 6.4 kg 41*34*39 cm |
| MX25L6450FM2I-10G-TR |
MACRONIX/MXIC/旺宏 |
FLASH-SPI |
48,000
|
FLASH-SPI / 25L6450 / SOP-8 / 104 MHZ / -45 C ~ 85 C / RoHS / 3.0V / TAPE ON REEL / 2000 pcs 1.1 kg 39*36*6 cm |
| M27C801-100K1 (ROHS) |
STM/意法半导体 |
OTPROM |
16,512
|
OTPROM / 27C080 / PLCC-32 / 100NS / 0 C~+70 C / RoHS / 5 V / TUBE / EOL / 320 pcs |
| MX25L12850FM2I-10G TR |
MACRONIX/MXIC/旺宏 |
FLASH-SPI |
28,000
|
FLASH-SPI / 25L12850 / SOP-8 / 104 MHZ / -40 C~+85 C / RoHS / 3.0V / TAPE ON REEL / 2000 pcs |
| MX29F400CBTI-70G |
MACRONIX/MXIC/旺宏 |
FLASH-NOR |
10,560
|
FLASH-NOR / 29F400 BOTTOM / TSOP-48 / 70 NS / -40 C~+85 C / RoHS / 5 V / TRAY / 960 pcs 2.1 kg 35*16*9 cm |
| K4B2G1646F-BCK0T00 |
SAMSUNG/三星 |
DDR3 SDRAM |
200,000
|
DDR3 SDRAM / 128MX16 DDR3 / FBGA-96 / 800 MHZ / 0 C~+85 C / RoHS / 1.5 V / TAPE ON REEL / EOL / 2000 pcs 1.0 kg 36*34*7 cm |
| MX25L8006EM1I-12G/TR |
MACRONIX/MXIC/旺宏 |
FLASH-SPI |
22,500
|
FLASH-SPI / 25L8006 / SOP-16 / 86 MHZ / -40 C~+85 C / RoHS / 3.0V / TAPE ON REEL / 2500 pcs 0.0 kg 38*36*6 cm |
| MX29GL128FDT2I-90G TR |
MACRONIX/MXIC/旺宏 |
FLASH-NOR |
20,000
|
FLASH-NOR / 29LV128 / TSOP / -40 C~+85 C / RoHS / 3.3 V / TAPE ON REEL / 1000 pcs |
| AT45DB161E-SHD-T |
ADESTO |
DATA FLASH |
18,000
|
DATA FLASH / 45DB161 / SOIC / -40 C~+85 C / RoHS / 2.5V-3.6V / TAPE ON REEL / 2000 pcs 0.0 kg 37*36*6 cm |
| K4B2G1646F-BCNBT00 |
SAMSUNG/三星 |
DDR3 SDRAM |
83,980
|
DDR3 SDRAM / 128MX16 DDR3 / FBGA-96 / 2133(MT/S) / 0 C~+95 C / RoHS / 1.5 V / TAPE ON REEL / 2000 pcs 99.99 kg 38*36*7 cm |
| W25Q128BVEIG |
WINBOND/華邦 |
FLASH-SPI |
260
|
FLASH-SPI / 25Q128 / WSON-8(8X6MM) / -40 C~+85 C / RoHS / 2.7V-3.6V / EOL |
| MX29F040CTI-70G |
MACRONIX/MXIC/旺宏 |
FLASH-NOR |
9,360
|
FLASH-NOR / 29F040 / TSOP-32 / 70 NS / -40 C~+85 C / RoHS / 5 V / TRAY / 1560 pcs 2.11 kg 36*16*9 cm |
| K4X1G323PF-8GD8000 |
SAMSUNG/三星 |
DDR1 MOBILE |
5,600
|
DDR1 MOBILE / 32MX32 MDDR1 / FBGA-90 / 200 MHZ / -25 C~+85 C / RoHS / 1.8 V / TRAY / 1120 pcs |
| TC58NVM9S3ETA00 |
KIOXIA/鎧俠 |
FLASH-NAND |
57,060
|
FLASH-NAND / 64MX8 NAND SLC / TSOP-48 / 25 NS / 0 ~ 70 C / RoHS / 2.7V-3.6V / TRAY / EOL / 480 pcs |
| K4S643232H-UC70T00 |
SAMSUNG/三星 |
SDRAM |
4,000
|
SDRAM / 2MX32 SD / TSOP2(86) / 143 MHZ / 0 C~+85 C / RoHS / 3.3 V / TAPE ON REEL / 2000 pcs 2.4 kg 36*35*7 cm |
| STM32F103VET6 |
STM/意法半导体 |
MCU |
10,260
|
MCU / 32F103 / LQFP / -40 C~+85 C / RoHS / 2 V TO 3.6 / TRAY / 540 pcs 1.0 kg 38*21*10 cm |
| K4S281632O-LI75T00 |
SAMSUNG/三星 |
SDRAM |
88,000
|
SDRAM / 8MX16 SD / TSOP2(54) / 133 MHZ / -40 C~+85 C / RoHS / 3.3 V / TAPE ON REEL / EOL / 2000 pcs 2.6 kg 36*35*7 cm |
| M27C200170XF1(ROHS) |
STM/意法半导体 |
EPROM |
1,760
|
EPROM / 27C020 / DIP-28 / 70 NS / 0 C~+70 C / RoHS / 5 V / TUBE / 240 pcs 3.11 kg 55*9*7 cm |
| K4B1G1646I-BCK0000 |
SAMSUNG/三星 |
DDR3 SDRAM |
4,480
|
DDR3 SDRAM / 64MX16 DDR3 / FBGA-96 / 800 MHZ / 0 C~+95 C / RoHS / 1.5 V / TRAY / 1120 pcs 2.0 kg 38*19*11 cm |
| MX25L6406EM2I-12G |
MACRONIX/MXIC/旺宏 |
FLASH-SPI |
4,772
|
FLASH-SPI / 25FL064 / SOP-8 / 86 MHZ / -40 C~+85 C / RoHS / 3.0V / TUBE / 2024 pcs 1.6 kg 61*16*10 cm |
| SD-C04G2T2 |
TOSHIBA/東芝 |
MEMORY CARD-MICRO-SDHC |
8,400
|
MEMORY CARD-MICRO-SDHC / 4GB MICRO-SD / -25 C~+85 C / RoHS / EOL / 600 pcs 1.0 kg 36*16*5 cm |
| K9F2G08U0D-SIB0000 |
SAMSUNG/三星 |
FLASH-NAND |
960
|
FLASH-NAND / 256MX8 NAND SLC / TSOP-48 / -40 C~+85 C / RoHS / 2.7V-3.6V / TRAY / EOL / 960 pcs 2.0 kg 39*19*11 cm |
| KLM4G1YEMD-B031 |
SAMSUNG/三星 |
FLASH-EMMC |
12
|
FLASH-EMMC / 4GB EMMC / FBGA-153 / RoHS / TRAY / EOL / 1120 pcs |