| M27C256B-45XF1(ROHS) |
STM/意法半导体 |
EPROM |
1,040
|
EPROM / 27C256 / CDIP-28 / 45 NS / 0 C~+70 C / RoHS / 5 V / TUBE / 260 pcs 3.0 kg 55*9*7 cm |
| MX30LF1G18AC-XKIT/R |
MACRONIX/MXIC/旺宏 |
FLASH-NAND |
21,000
|
FLASH-NAND / 128MX8 NAND SLC / VFBGA-63 / 1 MHZ / -40 C~+85 C / RoHS / 2.7V~3.6V / TAPE ON REEL / 3000 pcs 1.0 kg 39*36*6 cm |
| STM32G030F6P6TR |
STM/意法半导体 |
MCU-ARM |
105,000
|
MCU-ARM / 32G030 / TSSOP-20 / 64MHZ / -40 C~+85 C / RoHS / 2.0V-3.6V / TAPE ON REEL / 2500 pcs |
| K4B8G0846D-MYK0000 |
SAMSUNG/三星 |
DDR3L SDRAM |
11,520
|
DDR3L SDRAM / 1GX8 DDR3L / FBGA-78 / 800 MHZ / 0 C~+85 C / RoHS / 1.35V/1.5V / TRAY / EOL / 1280 pcs |
| MX30LF1G18AC-TI TR |
MACRONIX/MXIC/旺宏 |
FLASH-NAND |
12,000
|
FLASH-NAND / 128MX8 NAND SLC / TSOP-48 / 1 MHZ / -40 C~+85 C / RoHS / 3.3 V / TAPE ON REEL / 1500 pcs 1.7 kg 39*36*6 cm |
| K4F6E304HB-MGCJ000 |
SAMSUNG/三星 |
LPDDR4 MOBILE |
7,382
|
LPDDR4 MOBILE / 512MX32 LPDDR4 / WFBGA-200 / 1866 MHZ / -25 C~+85 C / RoHS / 1.1 V / TRAY / 1280 pcs 2.0 kg 38*19*11 cm |
| MX30UF1G16AC-XKI TR |
MACRONIX/MXIC/旺宏 |
FLASH-NAND |
33,000
|
FLASH-NAND / 64MX16 NAND SLC / FBGA-63 / 25NS / -40 C~+85 C / RoHS / 1.70-1.95V / TAPE ON REEL / 3000 pcs 1.0 kg 39*36*6 cm |
| IS45S16100H-7BLA2-TR |
ISSI/矽成 |
SDRAM |
2,721
|
SDRAM / 1MX16 SD / FBGA-60 / 143 MHZ / -40 C~+105 C / RoHS / 3.3 V / TAPE ON REEL |
| IS61WV102416DBLL-10TLI |
ISSI/矽成 |
SRAM-ASYNC |
2,880
|
SRAM-ASYNC / 1MX16 FAST / TSOP-48 / 10 NS / -40 C~+85 C / RoHS / 2.4V~3.6V / TRAY / 960 pcs 2.0 kg 9*16*37 cm |
| MX25L6433FM2I-08G-TR |
MACRONIX/MXIC/旺宏 |
FLASH-SPI |
18,000
|
FLASH-SPI / 64MB SPI / SOP-8 / 133 MHZ / -40 C~+85 C / RoHS / 3.3 V / TAPE ON REEL / 2000 pcs 0.0 kg 39*36*6 cm |
| IS46LR32320B-6BLA1 |
ISSI/矽成 |
LPDDR1 MOBILE |
7
|
LPDDR1 MOBILE / 32MX32 LPDDR1 / FBGA-90 / 166MHZ / -40 C~+95 C / RoHS / 1.8 V / TRAY |
| IS45S32160F-7BLA2 |
ISSI/矽成 |
SDRAM |
6
|
SDRAM / 16MX32 SD / TFBGA-90 / 143 MHZ / -40 C~+105 C / RoHS / 3.3 V / TRAY |
| IS43TR85120BL-107MBLI |
ISSI/矽成 |
DDR3 SDRAM |
1
|
DDR3 SDRAM / 512MX8 DDR3 / FBGA-78 / 933 MHZ / -40 C~+95 C / RoHS / 1.5 V / TRAY / 242 pcs |
| IS46LR32320B-5BLA2 |
ISSI/矽成 |
LPDDR1 MOBILE |
22
|
LPDDR1 MOBILE / 32MX32 LPDDR1 / FBGA-90 / 200 MHZ / -40 C~+105 C / RoHS / 1.8 V / TRAY |
| IS43R16320F-6TLI |
ISSI/矽成 |
DDR1 SDRAM |
13
|
DDR1 SDRAM / 32MX16 DDR1 / TSOP2(66) / 166MHZ / -40 C~+95 C / RoHS / 2.5 V |
| IS43R16320F-5TLI |
ISSI/矽成 |
DDR1 SDRAM |
504
|
DDR1 SDRAM / 32MX16 DDR1 / TSOP2(66) / 200 MHZ / -40 C~+95 C / RoHS / 2.5 V |
| IS43LD32640B-18BPLI |
ISSI/矽成 |
LPDDR2 MOBILE |
4
|
LPDDR2 MOBILE / 64MX32 LPDDR2 / FBGA-134 / 533 MHZ / -40 C~+95 C / Leaded / 1.2/1.8V |
| IS43R16320D-5BLI |
ISSI/矽成 |
DDR1 SDRAM |
15
|
DDR1 SDRAM / 32MX16 DDR1 / BGA-60 / 200 MHZ / -40 C~+95 C / RoHS / 2.5 V / TRAY / 1900 pcs |
| IS43LD32640B-25BPL |
ISSI/矽成 |
LPDDR2 MOBILE |
13
|
LPDDR2 MOBILE / 64MX32 LPDDR2 / FBGA-134 / 400 MHZ / 0 C~+85 C / Leaded / 1.2/1.8V |
| IS46LD32160A-18BLA2 |
ISSI/矽成 |
LPDDR2 MOBILE |
33
|
LPDDR2 MOBILE / 16MX32 LPDDR2 / FBGA-134 / 533 MHZ / -40 C~+105 C / RoHS / 1.14V~1.95 / TRAY |
| IS46LD32320C-18BPLA2 |
ISSI/矽成 |
LPDDR2 MOBILE |
1,075
|
LPDDR2 MOBILE / 32MX32 LPDDR2 / PBGA-168 / 533 MHZ / -40 C~+105 C / RoHS / 1.14V~1.95 / TRAY |
| IS43R86400D-5TL |
ISSI/矽成 |
DDR1 SDRAM |
597
|
DDR1 SDRAM / 64MX8 DDR1 / TSOP2(66) / 200 MHZ / 0 C~+85 C / RoHS / 2.5 V / TRAY / 1080 pcs |
| IS45VM32160E-6BLA2 |
ISSI/矽成 |
SDRAM MOBILE |
220
|
SDRAM MOBILE / 16MX32 SD / FBGA-90 / 166MHZ / -40 C~+105 C / RoHS / 1.8 V / TRAY |
| IS45S16100H-7BLA2 |
ISSI/矽成 |
SDRAM |
1,300
|
SDRAM / 1MX16 SD / FBGA-60 / 143 MHZ / -40 C~+105 C / RoHS / 3.3 V / TRAY |
| IS43DR16320E-3DBLI |
ISSI/矽成 |
DDR2 SDRAM |
19
|
DDR2 SDRAM / 32MX16 DDR2 / FBGA-84 / 333 MHZ / -40 C~+95 C / RoHS / 1.8 V / TRAY / 209 pcs |