| K4B2G1646F-BCK0T00 |
SAMSUNG/三星 |
DDR3 SDRAM |
242,000
|
DDR3 SDRAM / 128MX16 DDR3 / FBGA-96 / DDR3-1600(11-11-11) / 0 C TO +85 C / RoHS / 1.5 V / TAPE ON REEL / EOL / 2000 pcs 1.0 kg 36*34*7 cm |
| K4B1G1646G-BCH9T00 |
SAMSUNG/三星 |
DDR3 SDRAM |
2,562
|
DDR3 SDRAM / 64MX16 DDR3 / FBGA-96 / DDR3-1333 / COMMERCIAL / RoHS / 1.5 V / TAPE ON REEL / 2000 pcs 1.25 kg 36*35*7 cm |
| K4T51163QN-BCE70CV |
SAMSUNG/三星 |
DDR2 SDRAM |
5,120
|
DDR2 SDRAM / 32MX16 DDR2 / FBGA / 800 MHZ / COMMERCIAL / RoHS / 1.8 V / TRAY |
| MX25L8006EM1I-12G/TR |
MACRONIX/MXIC/旺宏 |
FLASH-SPI |
5,000
|
FLASH-SPI / 25L8006 / SOP / -40 ~+85 C(IND) / RoHS / 3.0V / TAPE ON REEL / 2500 pcs 0.0 kg 38*36*6 cm |
| K4B4G1646E-BMMATCV |
SAMSUNG/三星 |
DDR3LP SDRAM |
2,000
|
DDR3LP SDRAM / 256MX16 LPDDR3 / FBGA / DDR3-1866(13-13-13)4 / -40 C~+95 C / RoHS / 1.35V / TAPE ON REEL / 2000 pcs |
| K4B1G1646I-BCMAT00 |
SAMSUNG/三星 |
DDR3 SDRAM |
2,000
|
DDR3 SDRAM / 64MX16 DDR3 / FBGA-96 / DDR3-1866(13-13-13)4 / 0 C TO 95 C (TC) / RoHS / 1.5 V / TAPE ON REEL / 2000 pcs 1.0 kg 36*34*7 cm |
| IS43DR16320B-3DBL |
ISSI |
DDR2 SDRAM |
42,690
|
DDR2 SDRAM / 32MX16 DDR2 / BGA / 333MHZ / 0 ~ 70 C / RoHS / 1.8 V / TRAY / EOL / 1360 pcs 2.0 kg 37*16*9 cm |
| A29040BL-55UF |
AMIC/聯笙 |
FLASH-NOR |
4,470
|
FLASH-NOR / 29F040 / PLCC / 55 NS ACCESS SPEED / -40 ~+85 C(IND) / RoHS / 5 V / TUBE / EOL / 3000 pcs 5.5 kg 10*10-59 cm |
| MX25L12850FM2I-10G TR |
MACRONIX/MXIC/旺宏 |
FLASH-SPI |
58,000
|
FLASH-SPI / 25L12850 / SOP / 104MHZ / -40 ~+85 C(IND) / RoHS / 3.0V / TAPE ON REEL / 2000 pcs |
| K4M641633K-BN75000 |
SAMSUNG/三星 |
SDRAM-MOBILE-LP |
168,561
|
SDRAM-MOBILE-LP / 4MX16 LPSDRAM / FBGA-54 / 133MHZ / -25 C~+85 C(WIR / RoHS / 3.0V/3.3V / TRAY / EOL / 1280 pcs 2.4 kg 38*19*11 cm |
| MX25L6450FM2I-10G-TR |
MACRONIX/MXIC/旺宏 |
FLASH-SPI |
40,000
|
FLASH-SPI / 25L6450 / SOP / 104MHZ / -45 C ~ 85 C / RoHS / 3.0V / TAPE ON REEL / 2000 pcs 1.1 kg 39*36*6 cm |
| MX29GL128FDT2I-90G TR |
MACRONIX/MXIC/旺宏 |
FLASH-NOR |
2,000
|
FLASH-NOR / 29LV128 / TSOP / -40 ~+85 C(IND) / RoHS / 3.3 V / TAPE ON REEL / 1000 pcs |
| LPC2138FBD64/01,15 |
NXP/恩智浦 |
MCU |
7,200
|
MCU / LPC2138 / LQFP-64 / RoHS / TRAY / 160 pcs 0.46 kg 33*15*1 cm |
| MX25U12835FM2I-10G TR |
MACRONIX/MXIC/旺宏 |
FLASH-SPI |
4,000
|
FLASH-SPI / 25Q128 / SOP / 104MHZ / -40 ~+85 C(IND) / RoHS / 1.8 V / TAPE ON REEL / 2000 pcs |
| M27C512-45XF1 |
STM/意法半导体 |
EPROM |
7,956
|
EPROM / 27C512 / CDIP / 0 ~ 70 C / Leaded / 5 V / TUBE / EOL / 260 pcs 3.0 kg 55*9*8 cm |
| LPC1768FBD100,551 |
NXP/恩智浦 |
MCU-ARM |
7,200
|
MCU-ARM / LPC1768 / LQFP100 / -40 ~+85 C(IND) / RoHS / 3.3 V / TRAY / 90 pcs 0.51 kg 36*19*4 cm |
| K4B4G0846E-BCMAT00 |
SAMSUNG/三星 |
DDR3 SDRAM |
78,000
|
DDR3 SDRAM / 512MX8 DDR3 / FBGA-78 / DDR3-1866(13-13-13)4 / 0 C TO 95 C (TC) / RoHS / 1.5 V / TAPE ON REEL / EOL / 2000 pcs |
| MX29F040CQI-70G |
MACRONIX/MXIC/旺宏 |
FLASH-NOR |
14,912
|
FLASH-NOR / 29F040 / PLCC / 70NS / INDUSTRIAL / RoHS / 5 V / TUBE / 2240 pcs 4.9 kg 61*16*10 cm |
| MX29F800CBTI-70G |
MACRONIX/MXIC/旺宏 |
FLASH-NOR |
7,270
|
FLASH-NOR / 29F800 BOTTOM / TSOP / 70NS / INDUSTRIAL / RoHS / 5 V / TRAY / 960 pcs 1.94 kg 36*16*9 cm |
| LPC1756FBD80551 |
NXP/恩智浦 |
MCU-ARM |
5,117
|
MCU-ARM / LPC1756 / LQFP-80 / RoHS / TRAY / 119 pcs 0.0 kg 35*19*4 cm |
| MX30LF1G18AC-TI |
MACRONIX/MXIC/旺宏 |
FLASH-NAND |
5,770
|
FLASH-NAND / 128MX8 NAND SLC / TSOP / INDUSTRIAL / RoHS / 2.7V-3.6V / TRAY / 960 pcs 2.08 kg 38*16*9 cm |
| K4B2G0846F-BCK0T00 |
SAMSUNG/三星 |
DDR3 SDRAM |
6,000
|
DDR3 SDRAM / 256MX8 DDR3 / FBGA / DDR3-1600(11-11-11) / COMMERCIAL / RoHS / 1.5 V / TAPE ON REEL / 2000 pcs 2.0 kg 38*19*11 cm |
| M27C801-100K1 (ROHS) |
STM/意法半导体 |
OTPROM |
17,152
|
OTPROM / 27C080 / PLCC / RoHS / 5 V / TUBE / EOL / 320 pcs |
| K4B4G1646E-BMMA0CV |
SAMSUNG/三星 |
DDR3LP SDRAM |
38,080
|
DDR3LP SDRAM / 256MX16 LPDDR3 / FBGA / DDR3-1866(13-13-13)4 / RoHS / 1.35V / TRAY / 1120 pcs |
| LPC1754FBD80551 |
NXP/恩智浦 |
MCU-ARM |
10,234
|
MCU-ARM / LPC1754 / LQFP-80 / RoHS / TRAY / 119 pcs 0.0 kg 35*18*4 cm |