| TSX712IYDT |
STM/意法半导体 |
AMPLIFIER |
37,500
|
AMPLIFIER / TSX712 / SO-8 / 2.7 MHZ / -40 C~+125 C / RoHS / 16 V / TAPE ON REEL / 2500 pcs |
| NUP5120X6T2G |
ON-SEMICONDUCTOR/安森美 |
ARRAY |
520,000
|
ARRAY / NUP5120 / SOT-553-5 / 90 W / -40 C~+125 C / RoHS / 400 V / TAPE ON REEL / 4000 pcs |
| IS42S32160B-7BLI |
ISSI/矽成 |
SDRAM |
2,062
|
SDRAM / 16MX32 SD / FBGA-90 / 143 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 2400 pcs |
| IS45S16160D-75ETLA1 |
ISSI/矽成 |
SDRAM |
60,415
|
SDRAM / 16MX16 SD / TSOP2(54) / 133 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 1080 pcs |
| 27C256-12P |
MICROCHIP/微芯 |
EPROM |
352
|
EPROM / 27C256 / DIP-28 / 120 NS / 0 C~+70 C / Leaded / 5.0 V |
| S34ML08G101TFA003 |
SKYHIGH |
FLASH-NAND |
5,000
|
FLASH-NAND / 1GX8 NAND SLC / TSOP-48 / 25 NS / -40 C~+85 C / RoHS / 3.3 V / TAPE ON REEL / 1000 pcs |
| KLMAG1JETD-B041009 |
SAMSUNG/三星 |
FLASH-EMMC |
5,600
|
FLASH-EMMC / 16GB EMMC / FBGA-153 / 52 MHZ / -20 ~+85 / RoHS / 1.8V~3.3V |
| IS42S32800J-7BLI |
ISSI/矽成 |
SDRAM |
2,490
|
SDRAM / 8MX32 SD / BGA-90 / 143 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / 2400 pcs 2.11 kg 37*9*15 cm |
| K4B2G1646F-BYMAT00 |
SAMSUNG/三星 |
DDR3L SDRAM |
68,000
|
DDR3L SDRAM / 128MX16 DDR3L / FBGA-96 / 1866 MBPS / 0 C~+85 C / RoHS / 1.35V / TAPE ON REEL / 2000 pcs |
| AT45DB321E-SHF-T |
DIALOG/ADESTO/戴樂格 |
DATA FLASH |
30,000
|
DATA FLASH / 45DB321 / SOIC-8 / 85 MHZ / -40 C~+85 C / RoHS / 2.3V-3.6V / TAPE ON REEL / 2000 pcs 0.0 kg 37*35,5*6 cm |
| IS49NLC36800-25EWBLI |
ISSI/矽成 |
RLDRAM2 |
10,146
|
RLDRAM2 / 8MX36 RLD2 / WBGA-144 / 400 MHZ / -40 C~+85 C / RoHS / 1.5V/1.8V / TRAY / 104 pcs |
| EDS1232CASE-1A-E |
MICRON/美光 |
SDRAM |
41,344
|
SDRAM / 4MX32 SD / FBGA-90 / 100 MHZ / 0 C~+70 C / RoHS / 2.5 V / TRAY / 1045 pcs 1.2 kg 37.5*17.5*7.5 cm |
| IS62WV2568BLL-55TLI-TR |
ISSI/矽成 |
SRAM-ASYNC |
40,500
|
SRAM-ASYNC / 256KX8 SRAM / TSOP-32 / 55 NS / -40 C~+85 C / RoHS / 1.65V-3.6V / TAPE ON REEL / 1500 pcs 1.5 kg 36*34*6 cm |
| K4A4G165WF-BCTD0CV |
SAMSUNG/三星 |
DDR4 SDRAM |
640
|
DDR4 SDRAM / 256MX16 DDR4 / FBGA-96 / 2666 MBPS / 0 C~+85 C / RoHS / 1.2V / TRAY / 1120 pcs |
| K4F6E304HB-MGCJ000 |
SAMSUNG/三星 |
LPDDR4 MOBILE |
6,082
|
LPDDR4 MOBILE / 1GX16 LPDDR4 / FBGA-200 / 1866 MHZ / -25 C~+85 C / RoHS / 1.1 V / TRAY / EOL / 1280 pcs 2.0 kg 38*19*11 cm |
| K4M641633K-BN75000 |
SAMSUNG/三星 |
SDRAM MOBILE |
33,921
|
SDRAM MOBILE / 4MX16 SD / FBGA-54 / 133 MHZ / -25 C~+85 C / RoHS / 3.0V/3.3V / TRAY / EOL / 1280 pcs 2.4 kg 38*19*11 cm |
| IS41C16100C-50KLI |
ISSI/矽成 |
DRAM |
880
|
DRAM / 1MX16 EDO / SOJ-42 / 50 NS / -40 C~+85 C / RoHS / 5.0 V / TUBE / EOL / 1600 pcs 4.0 kg 53*13*12 cm |
| IS42S32160B-7TL |
ISSI/矽成 |
SDRAM |
9,625
|
SDRAM / 16MX32 SD / TSOP2(86) / 143 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 1080 pcs |
| IS49NLS18320A-18WBL |
ISSI/矽成 |
RLDRAM2 |
3,177
|
RLDRAM2 / 32MX18 RLD2 / WBGA-144 / 533 MHZ / 0 C~+85 C / RoHS / 1.5V/1.8V / TRAY / 104 pcs |
| M12L64322A-6TIG |
ESMT/EMP/晶豪 |
SDRAM |
843
|
SDRAM / 2MX32 SD / TSOP2(86) / 166 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / 1080 pcs |
| IS42SM16800H-75BLI |
ISSI/矽成 |
SDRAM MOBILE |
522
|
SDRAM MOBILE / 8MX16 SD / FBGA-54 / 133 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / 348 pcs |
| M27C801-100K1 (ROHS) |
STM/意法半导体 |
OTPROM |
4,752
|
OTPROM / 27C080 / PLCC-32 / 80 MHZ / 0 C~+70 C / RoHS / 5.0 V / TUBE / EOL / 320 pcs |
| IS42S16160D-7BLI |
ISSI/矽成 |
SDRAM |
3,397
|
SDRAM / 16MX16 SD / FBGA-54 / 143 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 2400 pcs 2.0 kg 37*16*9 cm |
| IS42S32400F-7BLI |
ISSI/矽成 |
SDRAM |
4,048
|
SDRAM / 4MX32 SD / FBGA-90 / 143 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / 2400 pcs 2.0 kg 37*16*9 cm |
| MX30LF1G18AC-TI |
MACRONIX/MXIC/旺宏 |
FLASH-NAND |
56,650
|
FLASH-NAND / 128MX8 NAND SLC / TSOP-48 / 25 NS / -40 C~+85 C / RoHS / 2.7V~3.6V / TRAY / 960 pcs 2.08 kg 38*16*9 cm |