| K9F2G08U0C-BCB0000 |
SAMSUNG |
FLASH-NAND |
1,171
|
FLASH-NAND / 256MX8 NAND SLC / FBGA-63 / 25 NS / 0 C~+70 C / RoHS / 2.7V~3.6V / TRAY / 1280 pcs |
| IS42S16160D-75ETL |
ISSI |
SDRAM |
4,090
|
SDRAM / 16MX16 SD / TSOP2(54) / 133 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / EOL |
| K9F5608U0D-JIB0000 |
SAMSUNG |
FLASH-NAND |
38,400
|
FLASH-NAND / 32MX8 NAND SLC / FBGA-63 / 50 NS / -40 C~+85 C / RoHS / 2.7V~3.6V / TRAY / EOL / 1280 pcs 2.0 kg 38*19*11 cm |
| K4T1G084QJ-BIE7TCV |
SAMSUNG |
DDR2 SDRAM |
4,000
|
DDR2 SDRAM / 128MX8 DDR2 / FBGA-60 / 800 MBPS / -40 C~+85 C / RoHS / 1.8 V / TAPE ON REEL / EOL / 2000 pcs |
| RF1S740SM9AS |
HARRIS |
TRANSISTOR |
34,400
|
TRANSISTOR / 1S740 / TO-236-3 / 70 A / -55 C~+175 C / Leaded / 4.0V / TAPE ON REEL / 800 pcs |
| IS46TR16128A-187FBLA1-TR |
ISSI |
DDR3 SDRAM |
2,250
|
DDR3 SDRAM / 128MX16 DDR3 / FBGA-96 / 1066 MBPS / -40 C~+85 C / RoHS / 1.5 V / TAPE ON REEL |
| MX25L6433FMI-08G/TR |
MACRONIX/MXIC |
FLASH-SPI |
1,000
|
FLASH-SPI / 64MB SPI / SOP-16 / 133 MHZ / -40 C~+85 C / RoHS / 3.3 V / TAPE ON REEL / 1000 pcs |
| M29DW323DT-70N6 |
MICRON |
FLASH-NOR |
19,508
|
FLASH-NOR / 32MB PARALLEL / TSOP-48 / 70 NS / -40 C~+85 C / Leaded / 2.7V~3.6V / TRAY / 576 pcs 1.87 kg 40*20*11 cm |
| MX30LF4G28AC-TI/TR |
MACRONIX/MXIC |
FLASH-NAND |
7,500
|
FLASH-NAND / 512MX8 NAND SLC / TSOP-48 / 25 NS / -40 C~+85 C / RoHS / 2.7V~3.6V / TAPE ON REEL / 1500 pcs 1.0 kg 39*36*6 cm |
| K5N3217ATA-AT8T0TN |
SAMSUNG |
MCP |
21,000
|
MCP / 32MF+16MUR / FBGA-52 / 83 MHZ / -25 C~+85 C / RoHS / 1.8 V / TAPE ON REEL / 3000 pcs |
| IS46DR16128A-3DBLA2 |
ISSI |
DDR2 SDRAM |
826
|
DDR2 SDRAM / 128MX16 DDR2 / FBGA-84 / 667 MBPS / -40 C~+105 C / RoHS / 1.8 V / TRAY / 1620 pcs |
| IS43R16160F-5BLI |
ISSI |
DDR1 SDRAM |
6,024
|
DDR1 SDRAM / 16MX16 DDR1 / FBGA-60 / 200 MHZ / -40 C~+85 C / RoHS / 2.5 V / TRAY / 1900 pcs |
| S34MS02G200GHI000 |
SKYHIGH |
FLASH-NAND |
25,303
|
FLASH-NAND / 256MX8 NAND SLC / BGA-67 / 45 NS / -40 C~+85 C / RoHS / 1.8 V / TRAY / EOL / 90 pcs |
| IS46LR16160G-6BLA2 |
ISSI |
LPDDR1 MOBILE |
2,986
|
LPDDR1 MOBILE / 16MX16 LPDDR1 / FBGA-60 / 166 MHZ / -40 C~+105 C / RoHS / 1.8 V / TRAY |
| K521H12ACE-B050T00 |
SAMSUNG |
MCP |
4,000
|
MCP / 1GB NAND+512M LPDDR1 / FBGA-107 / 5 NS / 0 C~+85 C / RoHS / 1.70-1.95V / TAPE ON REEL / 2000 pcs 1.11 kg 36*35*7 cm |
| MD5832-D256-V3Q18-X |
SANDISK/WD |
FLASH-DISK ON CHIP |
500
|
FLASH-DISK ON CHIP / 32MB DOC / FBGA-85 / 55 NS / -40 C~+125 C / Leaded / 3.3 V |
| MBM29QM96DF-65PBT |
FUJITSU |
FLASH-NOR |
7,797
|
FLASH-NOR / 29LV100 / FBGA-80 / 65 NS / -40 C~+85 C / Leaded / 2.7V~3.6V / TRAY / 2100 pcs 0.9 kg 16X8X36 cm |
| IS43LR16160G-6BLI |
ISSI |
LPDDR1 MOBILE |
87
|
LPDDR1 MOBILE / 16MX16 LPDDR1 / FBGA-60 / 166 MHZ / -40 C~+85 C / RoHS / 1.8 V / TRAY / 3000 pcs |
| STTH3R06 |
STM |
RECTIFIER |
97,200
|
RECTIFIER / 3R06 / THROUGH HOLE / 3 A / -40 C~+175 C / RoHS / 600 V / TAPE ON REEL / 600 pcs 0.8 kg 25,5*8*8 CM cm |
| IS42S32200E-6BLI |
ISSI |
SDRAM |
1,509
|
SDRAM / 2MX32 SD / TFBGA-90 / 166 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / EOL |
| IS43TR16128AL-125KBLI |
ISSI |
DDR3L SDRAM |
862
|
DDR3L SDRAM / 128MX16 DDR3L / FBGA-96 / 1600 MBPS / -40 C~+85 C / RoHS / 1.35 V / TRAY / EOL / 1900 pcs |
| IS49NLC36160A-18WBLI |
ISSI |
RLDRAM2 |
975
|
RLDRAM2 / 16MX36 RLD2 / WBGA-144 / 533 MHZ / -40 C~+85 C / RoHS / 1.5V/1.8V / TRAY |
| IS49NLC36800-25EWBLI |
ISSI |
RLDRAM2 |
10,146
|
RLDRAM2 / 8MX36 RLD2 / WBGA-144 / 400 MHZ / -40 C~+85 C / RoHS / 1.5V/1.8V / TRAY / 104 pcs |
| IS46TR16256AL-125KBLA1 |
ISSI |
DDR3L SDRAM |
2,298
|
DDR3L SDRAM / 256MX16 DDR3L / BGA-96 / 1600 MBPS / -40 C~+85 C / RoHS / 1.35V/1.5V / TRAY / EOL |
| IS43TR16640BL-107MBL |
ISSI |
DDR3L SDRAM |
2,661
|
DDR3L SDRAM / 64MX16 DDR3L / FBGA-96 / 1866 MBPS / 0 C~+85 C / RoHS / 1.35V / TRAY / EOL |