| GM71V16163CT-6DR |
SK HYNIX |
DRAM |
20,000
|
DRAM / 1MX16 EDO / TSOP2(44/50) / 60 NS / 0 C~+70 C / Leaded / 3.3 V / TAPE ON REEL / 1000 pcs 1.4 kg 35*34*6 cm |
| K9F2G08U0C-BIB0000 |
SAMSUNG |
FLASH-NAND |
3,719
|
FLASH-NAND / 256MX8 NAND SLC / FBGA-63 / 25 NS / 0 C~+70 C / RoHS / 2.7V~3.6V / TRAY / 1280 pcs 2.5 kg 38*19*11 cm |
| PEF22810TV2.1 |
INFINEON |
TELECOM CHIP |
20,597
|
TELECOM CHIP / PEB22810 / SOIC-8 / Leaded / TUBE / 1000 pcs 0.7 kg 58*14*7 cm |
| KLMBG4GESD-C02PT18 |
SAMSUNG |
FLASH-EMMC |
11,000
|
FLASH-EMMC / 32GB EMMC / FBGA-100 / 52 MHZ / -40 C~+85 C / RoHS / 1.8V/3.3V / TAPE ON REEL / EOL / 1000 pcs |
| IS45S16800F-7CTLA2 |
ISSI |
SDRAM |
3,502
|
SDRAM / 8MX16 SD / TSOP2(54) / 143 MHZ / -40 C~+105 C / RoHS / 3.3 V / TRAY |
| EDD1216AASE-6B-E |
MICRON |
DDR1 SDRAM |
55,639
|
DDR1 SDRAM / 8MX16 DDR1 / FBGA-60 / 166 MHZ / 0 C~+70 C / RoHS / 2.5 V / TRAY / 1045 pcs 1.3 kg 37*17.5*7.5 cm |
| MT29F4G08ABBEAH4:E |
MICRON |
FLASH-NAND |
14,000
|
FLASH-NAND / 512MX8 NAND SLC / VFBGA-63 / 25 NS / 0 C~+70 C / RoHS / 1.8 V / TAPE ON REEL / EOL / 1000 pcs 0.86 kg 37*34*6* cm |
| M29F002BT-70N1T |
STM |
FLASH-NOR |
5,945
|
FLASH-NOR / 29F002 TOP / TSOP-32 / 70 NS / 0 C~+70 C / Leaded / 5.0 V / TAPE ON REEL / 1500 pcs 1.39 kg 35*34*4 cm |
| M24128-WMN6T |
STM |
EEPROM |
14,492
|
EEPROM / 24C128 / SO8 / Leaded / 5.0 V / TAPE ON REEL / 2500 pcs 0.0 kg 5*5*3,5 cm |
| TC58FVM5B2AFT-65BAH |
KIOXIA |
FLASH-NOR |
5,289
|
FLASH-NOR / 29DL320 / TSOP-48 / -40 C~+85 C / RoHS / 3.0V / TRAY / 480 pcs 1.13 kg 35*16*5 cm |
| MX29LV800CBXBC-90G |
MACRONIX/MXIC |
FLASH-NOR |
1,910
|
FLASH-NOR / 29LV800 BOTTOM / TFBGA-48 / 90 NS / 0 C~+85 C / RoHS / 3.3 V / TRAY |
| MX29LV320CBTC-70G |
MACRONIX/MXIC |
FLASH-NOR |
288
|
FLASH-NOR / 29LV320 / TSOP-48 / 70 NS / 0 C~+70 C / RoHS / 3.3 V / TRAY / 960 pcs |
| K4H641638N-LCCC |
SAMSUNG |
DDR1 SDRAM |
510
|
DDR1 SDRAM / 4MX16 DDR1 / TSOP2(66) / 200 MHZ / 0 C~+85 C / RoHS / 2.5 V / TRAY / 960 pcs |
| K4S511632D-UC75 |
SAMSUNG |
SDRAM |
10
|
SDRAM / 32MX16 SD / TSOP2(54) / 133 MHZ / 0 C~+85 C / RoHS / 3.3 V / EOL |
| K4S641633H-BN75000 |
SAMSUNG |
SDRAM MOBILE |
3,976
|
SDRAM MOBILE / 4MX16 SD / FBGA-54 / 133 MHZ / -25 C~+85 C / RoHS / 3.0V/3.3V / TRAY / 1280 pcs 2.4 kg 38*19*11 cm |
| EDE1116ACSE-6ELI-E |
MICRON |
DDR2 SDRAM |
23,501
|
DDR2 SDRAM / 64MX16 DDR2 / FBGA-84 / 333 MHZ / -40 C~+95 C / RoHS / 1.8 V / TRAY / EOL / 855 pcs 1.21 kg 37*18*8 cm |
| AT45DB041D-SSU SL954 |
RENESAS |
FLASH-SPI |
1,508
|
FLASH-SPI / 4MB SPI / SOIC-8 / 66 MHZ / -40 C~+85 C / RoHS / 2.7V~3.3V / TUBE / EOL / 100 pcs |
| K4S560832J-LC75000 |
SAMSUNG |
SDRAM |
28,854
|
SDRAM / 32MX8 SD / TSOP2(54) / 133 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / 960 pcs |
| K4S560832J-UC75T00 |
SAMSUNG |
SDRAM |
4,000
|
SDRAM / 32MX8 SD / TSOP2(54) / 133 MHZ / 0 C~+85 C / RoHS / 3.3 V / TAPE ON REEL / EOL / 2000 pcs 2.4 kg 36*35*7 cm |
| K4X1G323PF-8GD8000 |
SAMSUNG |
LPDDR1 MOBILE |
4,480
|
LPDDR1 MOBILE / 32MX32 LPDDR1 / FBGA-90 / 200 MHZ / -25 C~+85 C / RoHS / 1.8 V / TRAY / EOL / 1120 pcs |
| MC68302FC16C |
NXP |
PROCESSOR |
15,101
|
PROCESSOR / MC68302 / PQFP-132 / 16 MHZ / 0 C~+70 C / RoHS / 5.0 V / TRAY / 36 pcs |
| K4B8G0846D-MYK0000 |
SAMSUNG |
DDR3(L) SDRAM |
11,520
|
DDR3(L) SDRAM / 1GX8 DDR3/L / FBGA-78 / 1600 MBPS / 0 C~+85 C / RoHS / 1.35 V/1.5 V / TRAY / EOL / 1280 pcs |
| EDS2532AABH-1AR2-E |
MICRON |
SDRAM |
115,235
|
SDRAM / 8MX32 SD / FBGA-90 / 100 MHZ / 0 C~+70 C / RoHS / 3.3 V / TRAY / EOL / 680 pcs 1.0 kg 37*17.5*7.5 cm |
| IS45R16160D-75BLA2 |
ISSI |
SDRAM MOBILE |
79,599
|
SDRAM MOBILE / 16MX16 SD / FBGA-54 / 133 MHZ / -40 C~+105 C / RoHS / 2.5 V / TRAY / 2784 pcs |
| K4S560432N-LC75TCV |
SAMSUNG |
SDRAM |
22,000
|
SDRAM / 64MX4 SD / TSOP2(54) / 133 MHZ / 0 C~+85 C / RoHS / 3.3 V / TAPE ON REEL / EOL / 2000 pcs |