| IS41LV16100S-50K |
ISSI |
DRAM |
6.982
|
DRAM / 1MX16 EDO / SOJ-42 / 50 NS / 0 C~+70 C / Leaded / 3.3 V / TUBE / EOL / 1600 pcs |
| VG2617400DJ-6 |
VANGUARD |
DRAM |
400
|
DRAM / 4MX4 FP / SOJ-24/26 / 60 NS / 0 C~+70 C / Leaded / TUBE / 1000 pcs 1.64 kg 57*13*8 cm |
| UPD78063GC-536-7EA |
NEC |
MCU |
92
|
MCU / UPD78063 / Leaded |
| AT24C64W-10SI-1.8 |
MICROCHIP |
EEPROM-2WIRE |
1.186
|
EEPROM-2WIRE / 24C64 / SOIC / 100 KHZ / -40 C~+85 C / Leaded / 1.8V~5.5V / TAPE ON REEL |
| K4H641638N-LCCC |
SAMSUNG |
DDR1 SDRAM |
510
|
DDR1 SDRAM / 4MX16 DDR1 / TSOP2(66) / 200 MHZ / 0 C~+85 C / RoHS / 2.5 V / TRAY / 960 pcs |
| A428316V-35F |
AMIC |
DRAM |
10.800
|
DRAM / 256KX16 EDO / TSOP2(40/44) / 35 NS / 0 C~+70 C / RoHS / 5.0 V / TRAY / 1350 pcs 2.0 kg 37*16*9 cm |
| HY57V561620FTP-H-C |
SK HYNIX |
SDRAM |
360
|
SDRAM / 16MX16 SD / TSOP2(54) / 133 MHZ / 0 C~+70 C / RoHS / 3.3 V / TRAY / EOL / 960 pcs 2.4 kg 37*10*17 cm |
| IS42S16400D-7TL |
ISSI |
SDRAM |
60
|
SDRAM / 4MX16 SD / TSOP2(54) / 143 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 1080 pcs |
| M12L128168A-6TG |
ESMT/EMP |
SDRAM |
1.080
|
SDRAM / 8MX16 SD / TSOP2(54) / 166 MHZ / 0 C~+70 C / RoHS / 3.3 V / TRAY / 1080 pcs 2.18 kg 37*16*9 cm |
| K4S641632H-UC75 |
SAMSUNG |
SDRAM |
24
|
SDRAM / 4MX16 SD / TSOP2(54) / 133 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / 960 pcs 2.0 kg |
| K4S511632D-UC75 |
SAMSUNG |
SDRAM |
10
|
SDRAM / 32MX16 SD / TSOP2(54) / 133 MHZ / 0 C~+85 C / RoHS / 3.3 V / EOL |
| HY57V643220DLTP-7I |
SK HYNIX |
SDRAM |
7.770
|
SDRAM / 2MX32 SD / TSOP2(86) / 143 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / 960 pcs 2.4 kg 37*18*11 cm |
| GM71V16163CT-6DR |
SK HYNIX |
DRAM |
20.000
|
DRAM / 1MX16 EDO / TSOP2(44/50) / 60 NS / 0 C~+70 C / Leaded / 3.3 V / TAPE ON REEL / 1000 pcs 1.4 kg 35*34*6 cm |
| M5M410092CFP-10/AZA7 |
RENESAS |
3D-RAM |
900
|
3D-RAM / M5M410092 / FP-128 / Leaded / TRAY / 300 pcs 1.03 kg 36*16*6 cm |
| M5M4V16169DTP-8 |
MITSUBISHI |
CACHED DRAM |
360
|
CACHED DRAM / 1MX16 CDRAM / TSOP / Leaded / TRAY / 360 pcs 1.06 kg 36*16*6 cm |
| IC41LV16100S-50TG |
ISSI |
DRAM |
12.016
|
DRAM / 1MX16 EDO / TSOP2(44/50) / 50 NS / 0 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 1170 pcs 2.0 kg 38*19*10 cm |
| K521H12ACE-B050T00 |
SAMSUNG |
MCP |
4.000
|
MCP / 1GB NAND+512M LPDDR1 / FBGA-107 / 5 NS / 0 C~+85 C / RoHS / 1.70-1.95V / TAPE ON REEL / 2000 pcs 1.11 kg 36*35*7 cm |
| EDD5116AGTA-5B-E |
MICRON |
DDR1 SDRAM |
1.080
|
DDR1 SDRAM / 32MX16 DDR1 / TSOP2(66) / 200 MHZ / 0 C~+70 C / RoHS / 2.5 V / TRAY / EOL / 540 pcs 1.5 kg 38*18*8 cm |
| K4H280838E-TCB000 |
SAMSUNG |
DDR1 SDRAM |
126
|
DDR1 SDRAM / 16MX8 DDR1 / TSOP2(66) / 133 MHZ / 0 C~+85 C / Leaded / 2.5 V / TRAY |
| IC41LV16256-35T |
ISSI |
DRAM |
3.343
|
DRAM / 256KX16 EDO / TSOP2(40/44) / 0 C~+85 C / Leaded / 3.3 V / TRAY / EOL / 1350 pcs 2.0 kg 37X16X9 cm |
| MSM54V16258BS-40TKR1 |
OKI |
DRAM |
3.000
|
DRAM / 256KX16 EDO / TSOP2(40/44) / 40 NS / 0 C~+70 C / Leaded / 3.3 V / TAPE ON REEL / 1000 pcs 1.15 kg 36*37*7 cm |
| GT218001B |
NVIDIA |
CPU |
35
|
CPU / GT218 / QFP / RoHS / TRAY |
| MTC20156TB-I |
ALCATEL |
MODEM CHIP |
309
|
MODEM CHIP / MTC20156 / TQFP / Leaded |
| CN8395-KBGR7186-15 |
CONEXANT |
MICROPROCESSOR |
157
|
MICROPROCESSOR / CN8395 / BGA / Leaded / TRAY / 40 pcs |
| MTC20144TQ-C |
ALCATEL |
ASIC |
104
|
ASIC / MTC20144 / QFP / Leaded |