EDB1316BDBH-1DAAT-F-D

Produktübersicht

IC Picture

Bilder dienen nur der Illustration

Hersteller-Nummer EDB1316BDBH-1DAAT-F-D
Hersteller MICRON
Produktkategorie LPDDR2 MOBILE
IC-Code 64MX16 LPDDR2

Produktbeschreibung

Gehäuse FBGA-134
Verpackung
RoHS RoHS
Spannungsversorgung 1.14V~1.95
Betriebstemperatur -40 C~+105 C
Geschwindigkeit 1066 MBPS
Standard Stückzahl
Abmessungen Karton

General Description The Low-Power DDR2 SDRAM (LPDDR2) is a high-speed CMOS, dynamic random-access memory containing 1,073,741,824 bits. The LPDDR2-S4 device is internally configured as an eight-bank DRAM. Each of the x16’s 134,217,728-bit banks is organized as 8192 rows by 1024 columns by 16 bits. Each of the x32’s 134,217,728-bit banks is organized as 8192 rows by 512 columns by 32 bits.

Verfügbare Angebote

Teilenummer Menge Datecode
EDB1316BDBH-1DAAT-F-D 220 Anfrage senden
EDB1316BDBH-1DAAT-F-D 800 Anfrage senden
EDB1316BDBH-1DAAT-F-D 900 Anfrage senden
EDB1316BDBH-1DAAT-F-D 0 Anfrage senden
EDB1316BDBH-1DAAT-F-D 560 Anfrage senden
EDB1316BDBH-1DAAT-F-D 660 Anfrage senden
EDB1316BDBH-1DAAT-F-D 1.050 Anfrage senden

FFFE (Form, Fit & Functional Equivalents)

Teilenummer Gehäuse Spannungsversorgung Geschwindigkeit Betriebstemperatur
IS46LD16640C-18BLA2 FBGA-134 1.2/1.8V 1066 MBPS -40 C~+105 C
IS46LD16640C-18BLA2-BM FBGA-134 1.2/1.8V 1066 MBPS -40 C~+105 C
IS46LD16640C-18BLA2-TR FBGA-134 1.2/1.8V 1066 MBPS -40 C~+105 C
IS46LD16640C-18BLA25 FBGA-134 1.2/1.8V 1066 MBPS -40 C~+105 C