H5AN4G6NAFR-UCH

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Hersteller-Nummer H5AN4G6NAFR-UCH
Hersteller SK HYNIX
Produktkategorie DDR4 SDRAM
IC-Code 256MX16 DDR4

Produktbeschreibung

Gehäuse FBGA-96
Verpackung TRAY
RoHS RoHS
Spannungsversorgung 1.2V
Betriebstemperatur
Geschwindigkeit
Standard Stückzahl
Abmessungen Karton
Number Of Words 256M
Bit Organization x16
Density 4G
Package Material lead & halogen free(ROHS compliant)
Hynix Memory H
Die Generation 2nd
No Of Banks Non-TSV
Product Family DRAM
Shipping Method tray

Description The H5AN4G4NAFR-xxC, H5AN4G8NAFR-xxC and H5AN4G6NAFR-xxC are a 4Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK hynix 4Gb DDR4 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.

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