H5TC4G63EFR-N0C

Produktübersicht

IC Picture

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Hersteller-Nummer H5TC4G63EFR-N0C
Hersteller SK HYNIX
Produktkategorie DDR3L SDRAM
IC-Code 256MX16 DDR3L
Andere Bezeichnungen H5TC4G63EFR-N0C D3 256X16

Produktbeschreibung

Gehäuse FBGA-96
Verpackung TRAY
RoHS RoHS
Spannungsversorgung 1.35V
Betriebstemperatur 0 C~+85 C
Geschwindigkeit
Standard Stückzahl
Abmessungen Karton
Number Of Words 256M
Bit Organization x16
Density 4G
Operating Temperature commercial temperature(0°C~85°C) & normal power
Package Material lead & halogen free(ROHS compliant)
Hynix Memory H
Die Generation 6th
No Of Banks 8 banks
Product Family DRAM
Shipping Method tray

Description The H5TC4G63EFR-xxA a 4Gb low power Double Data Rate III (DDR3L) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density, high bandwidth and low power operation at 1.35V. DDR3L SDRAM provides backward compatibility with the 1.5V DDR3 based environment without any changes. (Please refer to the SPD information for details.) SK hynix 4Gb DDR3L SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.

Verfügbare Angebote

Teilenummer Menge Datecode
H5TC4G63EFR-N0C 148 22+ Anfrage senden
H5TC4G63EFR-N0C 1.169 2020+ Anfrage senden
H5TC4G63EFR-N0C 20.000 17/18+ Anfrage senden
H5TC4G63EFR-N0C 104 1847+ Anfrage senden
H5TC4G63EFR-N0C 104 Anfrage senden
H5TC4G63EFR-N0C 7.924 Anfrage senden
H5TC4G63EFR-N0C 10.000 Anfrage senden
H5TC4G63EFR-N0C 26.570 Anfrage senden
H5TC4G63EFR-N0C 7.932 2016+ Anfrage senden
H5TC4G63EFR-N0C 82.000 Anfrage senden