| Gehäuse |
FBGA-96
|
| Verpackung |
TRAY
|
| RoHS |
RoHS
|
| Spannungsversorgung |
1.35V
|
| Betriebstemperatur |
0 C~+85 C
|
| Geschwindigkeit |
1600 MBPS
|
| Standard Stückzahl |
|
| Abmessungen Karton |
|
| Number Of Words |
256M
|
| Bit Organization |
x16
|
| Density |
4G
|
| Operating Temperature |
commercial temperature(0°C~85°C) & normal power
|
| Package Material |
lead & halogen free(ROHS compliant)
|
| Hynix Memory |
H
|
| Die Generation |
1st
|
| No Of Banks |
8 banks
|
| Product Family |
DRAM
|
| Shipping Method |
tray
|
Description
The H5TC4G83MFR-xxA(I) and H5TC4G63MFR-xxA(I) are a 4Gb low power Double Data Rate III (DDR3L)
Synchronous DRAM, ideally suited for the main memory applications which requires large memory density,
high bandwidth and low power operation at 1.35V. SK Hynix DDR3L SDRAM provides backward compatibility with the 1.5V DDR3 based environment without any changes. (Please refer to the SPD information for
details.)
SK Hynix 4Gb DDR3L SDRAMs offer fully synchronous operations referenced to both rising and falling
edges of the clock. While all addresses and control inputs are latched on the rising edges of the clock (falling edges of the clock), data, data strobes and write data masks inputs are sampled on both rising and
falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.
