H5TQ4G83CFR-RDA

Produktübersicht

IC Picture

Bilder dienen nur der Illustration

Hersteller-Nummer H5TQ4G83CFR-RDA
Hersteller SK HYNIX
Produktkategorie DDR3L SDRAM
IC-Code 512MX8 DDR3

Produktbeschreibung

Gehäuse FBGA-78
Verpackung TRAY
RoHS RoHS
Spannungsversorgung 1.5 V
Betriebstemperatur 0 C~+85 C
Geschwindigkeit 1866 MBPS
Standard Stückzahl
Abmessungen Karton
Number Of Words 512M
Bit Organization x8
Density 4G
Operating Temperature commercial temperature(0°C~85°C) & 1.35 VDD power
Package Material lead & halogen free(ROHS compliant)
Hynix Memory H
Die Generation 4th
No Of Banks 8 banks
Product Family DRAM
Shipping Method tray

Verfügbare Angebote

Teilenummer Menge Datecode
H5TQ4G83CFR-RDA 48.000 Anfrage senden

FFFE (Form, Fit & Functional Equivalents)

Teilenummer Gehäuse Spannungsversorgung Geschwindigkeit Betriebstemperatur
H5TQ4G83BFR-RDA FBGA-78 1.5 V 1866 MBPS 0 C~+85 C
H5TQ4G83BFR-RDCA FBGA-78 1.5 V 1866 MBPS 0 C~+85 C
H5TQ4G83EFR-RDA FBGA-78 1.5 V 1866 MBPS 0 C~+85 C
IS43TR85120A-107MBL BGA-78 1.5 V 1866 MBPS 0 C~+85 C
IS43TR85120AL BGA-78 1.35V/1.5V 1866 MBPS 0 C~+85 C
IS43TR85120AL-107MB BGA-78 1.35V/1.5V 1866 MBPS 0 C~+85 C
IS43TR85120AL-107MBL BGA-78 1.35V/1.5V 1866 MBPS 0 C~+85 C
IS43TR85120AL-107MBL-TR BGA-78 1.35V/1.5V 1866 MBPS 0 C~+85 C
IS43TR85120AL-107MBLC BGA-78 1.35V/1.5V 1866 MBPS 0 C~+85 C
IS43TR85120B-107MB BGA-78 1.5 V 1866 MBPS 0 C~+85 C