H5TQ4G83EFR-PBA

Produktübersicht

IC Picture

Bilder dienen nur der Illustration

Hersteller-Nummer H5TQ4G83EFR-PBA
Hersteller SK HYNIX
Produktkategorie DDR3L SDRAM
IC-Code 512MX8 DDR3

Produktbeschreibung

Gehäuse FBGA-78
Verpackung TRAY
RoHS RoHS
Spannungsversorgung 1.5 V
Betriebstemperatur 0 C~+85 C
Geschwindigkeit 1600 MBPS
Standard Stückzahl
Abmessungen Karton
Number Of Words 512M
Bit Organization x8
Density 4G
Operating Temperature commercial temperature(0°C~85°C) & 1.35 VDD power
Package Material lead & halogen free(ROHS compliant)
Hynix Memory H
Die Generation 6th
No Of Banks 8 banks
Product Family DRAM
Shipping Method tray

Verfügbare Angebote

Teilenummer Menge Datecode
H5TQ4G83EFR-PBA 5.800 15+ Anfrage senden
H5TQ4G83EFR-PBA 5.800 2015+ Anfrage senden
H5TQ4G83EFR-PBA 0 Anfrage senden

FFFE (Form, Fit & Functional Equivalents)

Teilenummer Gehäuse Spannungsversorgung Geschwindigkeit Betriebstemperatur
IS43TR85120AL-125KBLC BGA-78 1.35V/1.5V 1600 MBPS 0 C~+85 C
IS43TR85120B-125KB BGA-78 1.5 V 1600 MBPS 0 C~+85 C
IS43TR85120B-125KBL BGA-78 1.5 V 1600 MBPS 0 C~+85 C
IS43TR85120B-125KBLC BGA-78 1.5 V 1600 MBPS 0 C~+85 C
IS43TR85120BL-125KB BGA-78 1.35V/1.5V 1600 MBPS 0 C~+85 C
IS43TR85120BL-125KBL BGA-78 1.35V/1.5V 1600 MBPS 0 C~+85 C
IS43TR85120BL-125KBLC BGA-78 1.35V/1.5V 1600 MBPS 0 C~+85 C
IS43TR85120EC-125KB BGA-78 1.5 V 1600 MBPS 0 C~+85 C
IS43TR85120EC-125KBL BGA-78 1.5 V 1600 MBPS 0 C~+85 C
IS43TR85120EC-125KBLC BGA-78 1.5 V 1600 MBPS 0 C~+85 C