| Gehäuse | TSOP2(54) |
| Verpackung | TRAY |
| RoHS | Leaded |
| Spannungsversorgung | 3.3 V |
| Betriebstemperatur | 0 C~+70 C |
| Geschwindigkeit | 166 MHZ |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 8M |
| Bit Organization | x16 |
| Density | 128M |
| Package Material | normal |
| Hynix Memory | HY |
| Interface | LVTTL |
| Die Generation | 2nd Gen. |
| No Of Banks | 4 banks |
| Power Consumption | low power |
| Shipping Method | tray |
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| EDS1216AGTA-6B | TSOP2(54) | 3.3 V | 166 MHZ | 0 C~+70 C |
| EDS1216AGTA-6B-E | TSOP2(54) | 3.3 V | 166 MHZ | 0 C~+70 C |
| EDS1216AHTA-6B-E | TSOP2(54) | 3.3 V | 166 MHZ | 0 C~+70 C |
| EM639165TS-6G | TSOP2(54) | 3.3 V | 166 MHZ | 0 C~+70 C |
| EM639165TS-6G NBSP | TSOP2(54) | 3.3 V | 166 MHZ | 0 C~+70 C |
| EM639165TS-6G,8 16,TSOP5 | TSOP2(54) | 3.3 V | 166 MHZ | 0 C~+70 C |
| EM639165TSC-6G | TSOP2(54) | 3.3 V | 166 MHZ | 0 C~+70 C |
| EM639165TSC-6G TR | TSOP2(54) | 3.3 V | 166 MHZ | 0 C~+70 C |
| HY57V28160AT-6 | TSOP2(54) | 3.3 V | 166 MHZ | 0 C~+70 C |
| HY57V28160HCT-6 | TSOP2(54) | 3.3 V | 166 MHZ | 0 C~+70 C |