HY57V643220DT-6DR
Produktbeschreibung
| Gehäuse | TSOP2(86) |
| Verpackung | TRAY |
| RoHS | Leaded |
| Spannungsversorgung | 3.3 V |
| Betriebstemperatur | 0 C~+70 C |
| Geschwindigkeit | 166 MHZ |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 2M |
| Bit Organization | x32 |
| Density | 64M |
| Package Material | normal |
| Interface | LVTTL |
| Hynix Memory | HY |
| No Of Banks | 4 banks |
| Die Generation | 5th Gen. |
| Power Consumption | normal power |
| Shipping Method | tray |
Verfügbare Angebote
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| HY57V643220DT-6DR | 40.000 | Anfrage senden | |
| HY57V643220DT-6DR | 8.000 | Anfrage senden | |
| HY57V643220DT-6DR | 18.000 | Anfrage senden | |
| HY57V643220DT-6DR | 10.000 | Anfrage senden | |
| HY57V643220DT-6DR | 5.760 | 2004 | Anfrage senden |
| HY57V643220DT-6DR | 10.000 | 2005+ | Anfrage senden |
| HY57V643220DT-6DR | 11.520 | 2004+ | Anfrage senden |
| HY57V643220DT-6DR | 20.000 | Anfrage senden | |
| HY57V643220DT-6DR | 10.000 | 03 | Anfrage senden |
| HY57V643220DT-6DR | 10.000 | 2003+ | Anfrage senden |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| EM638325TS6-6G | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+70 C |
| EM638325TS6-6G DC:2010 | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+70 C |
| EM638325TSA-6G | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+70 C |
| EM638325TSS-6 | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+70 C |
| EM638325VF-6 | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+70 C |
| HY57V643220(C)6 | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+70 C |
| HY57V643220-6 | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+70 C |
| HY57V6432200CT-6 | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+70 C |
| HY57V643220BATC-6 | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+70 C |
| HY57V643220BCT-6 | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+70 C |