| Gehäuse | TSOP2(86) |
| Verpackung | TRAY |
| RoHS | Leaded |
| Spannungsversorgung | 3.3 V |
| Betriebstemperatur | 0 C~+70 C |
| Geschwindigkeit | 125 MHZ |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Density | 64M |
| Package Material | normal |
| Hynix Memory | HY |
| Die Generation | 4th Gen. |
| No Of Banks | 4 banks |
| Power Consumption | normal power |
| Shipping Method | tray |
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| ABS2M32SD-8R | TSOP2(86) | 3.3 V | 125MHZ | 0 C~+70 C |
| EM638325TS-8 | TSOP2(86) | 3.3 V | 125MHZ | 0 C~+70 C |
| HY57V643220BTC-8 | TSOP2(86) | 3.3 V | 125 MHZ | 0 C~+70 C |
| HY57V643220BTC6/8 | TSOP2(86) | 3.3 V | 125 MHZ | 0 C~+70 C |
| HY57V643220CLT-8 | TSOP2(86) | 3.3 V | 125 MHZ | 0 C~+70 C |
| HY57V643220CT-7 #12288 | TSOP2(86) | 3.3 V | 125 MHZ | 0 C~+70 C |
| HY57V643220CT-8 | TSOP2(86) | 3.3 V | 125 MHZ | 0 C~+70 C |
| HY57V643220CT-85 | TSOP2(86) | 3.3 V | 125 MHZ | 0 C~+70 C |
| HY57V643220CT-H12288 | TSOP2(86) | 3.3 V | 125 MHZ | 0 C~+70 C |
| HY57V643220CT-P-8 | TSOP2(86) | 3.3 V | 125 MHZ | 0 C~+70 C |