Bilder dienen nur der Illustration
| Hersteller-Nummer | K4A8G085WE-BCWE |
| Hersteller | SAMSUNG |
| Produktkategorie | DDR4 SDRAM |
| IC-Code | 1GX8 DDR4 |
| Andere Bezeichnungen | K4A8G085WE-BCWE0MM |
| Gehäuse | FBGA-78 |
| Verpackung | TRAY |
| RoHS | RoHS |
| Spannungsversorgung | 1.2 V |
| Betriebstemperatur | 0 C~+85 C |
| Geschwindigkeit | 2666 MBPS |
| Standard Stückzahl | 1280 |
| Abmessungen Karton | |
| Number Of Words | 1G |
| Bit Organization | x8 |
| Density | 8Gb |
| Internal Banks | 16 Banks |
| Power | Normal Power |
| Generation | 6th Generation |
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4A8G085WE-BCWE | 0 | Anfrage senden | |
| K4A8G085WE-BCWE | 10.000 | 2023+ | Anfrage senden |
| K4A8G085WE-BCWE | 15.360 | 21+ | Anfrage senden |
| K4A8G085WE-BCWE0MM | 0 | DC24+ | Anfrage senden |
| K4A8G085WE-BCWE | 20.480 | Anfrage senden | |
| K4A8G085WE-BCWE0MM | 0 | 23+ | Anfrage senden |
| K4A8G085WE-BCWE0MM | 0 | DC23+ | Anfrage senden |
| K4A8G085WE-BCWE | 0 | 21+ | Anfrage senden |
| K4A8G085WE-BCWE | 4.480 | Anfrage senden | |
| K4A8G085WE-BCWE0MM | 12.000 | Anfrage senden |
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| H5AN8G8NAFR-VKC | FBGA-78 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| H5AN8G8NAFR-VKCR | FBGA-78 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| H5AN8G8NCIR-VKIR | FBGA-78 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| H5AN8G8NCJR-VKC | FBGA-78 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| H5AN8G8NCJR-VKCR | FBGA-78 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| H5AN8G8NCJR-VKIR | FBGA-78 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| H5AN8G8NDJR-VKC | FBGA-78 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| H5AN8G8NJJR-VKC | FBGA-78 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| HSAN8G8NCJR-VKCR | FBGA-78 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| IS43QR81024A-075VB | FBGA-78 | 1.2 V | 2666 MBPS | 0 C~+85 C |