Bilder dienen nur der Illustration
| Hersteller-Nummer | K4A8G165WE-BCTD |
| Hersteller | SAMSUNG |
| Produktkategorie | DDR4 SDRAM |
| IC-Code | 512MX16 DDR4 |
| Gehäuse | FBGA-96 |
| Verpackung | |
| RoHS | RoHS |
| Spannungsversorgung | 1.2 V |
| Betriebstemperatur | 0 C~+85 C |
| Geschwindigkeit | 2666 MBPS |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 512M |
| Bit Organization | x16 |
| Density | 8Gb |
| Internal Banks | 16 Banks |
| Power | Normal Power |
| Generation | 6th Generation |
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4A8G165WE-BCTD | 8.000 | 21+ | Anfrage senden |
| K4A8G165WE-BCTD | 11.200 | 1930+ | Anfrage senden |
| K4A8G165WE-BCTD | 0 | Anfrage senden |
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| H5AN8G6NAFR-VKC | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| H5AN8G6NCJR-VKC | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| H5AN8G6NCJR-VKCR | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| H5AN8G6NCJR-VKCTR | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| H5AN8G6NCJR-VKIR | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| H5AN8G6NDJR-VKC | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| H5AN8G6NJJR-VKC | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| HSAN8G6NCJR-VKCR | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| HSAN8GENCJR-VKCR | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| HSANAGBNCMR-VKCR | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |