K4B2G0846F-BYMACV

Produktübersicht

IC Picture

Bilder dienen nur der Illustration

Hersteller-Nummer K4B2G0846F-BYMACV
Hersteller SAMSUNG
Produktkategorie DDR3L SDRAM
IC-Code 256MX8 DDR3L

Produktbeschreibung

Gehäuse FBGA-78
Verpackung
RoHS RoHS
Spannungsversorgung 1.35 V
Betriebstemperatur 0 C~+85 C
Geschwindigkeit 1866 MBPS
Standard Stückzahl
Abmessungen Karton
Number Of Words 256M
Bit Organization x8
Density 2G
Internal Banks 8 Banks
Power Low VDD(1.35V)
Generation 7th Generation

FFFE (Form, Fit & Functional Equivalents)

Teilenummer Gehäuse Spannungsversorgung Geschwindigkeit Betriebstemperatur
H5TC2G83DFR-RDC FBGA-78 1.35V 1866 MBPS 0 C~+85 C
H5TC2G83FFR-RDA FBGA-78 1.35V 1866 MBPS 0 C~+85 C
H5TC2G83GFR-RDA FBGA-78 1.35V 1866 MBPS 0 C~+85 C
H5TC2G83GFR-RDAR FBGA-78 1.35V 1866 MBPS 0 C~+85 C
IS43TR82560BL-107MB FBGA-78 1.35 V 1866 MBPS 0 C~+85 C
IS43TR82560BL-107MBL FBGA-78 1.35 V 1866 MBPS 0 C~+85 C
IS43TR82560BL-107MBL-TR FBGA-78 1.35 V 1866 MBPS 0 C~+85 C
IS43TR82560BL-107MBLC FBGA-78 1.35 V 1866 MBPS 0 C~+85 C
IS43TR82560CL FBGA-78 1.35 V 1866 MBPS 0 C~+85 C
IS43TR82560CL-107MBL FBGA-78 1.35 V 1866 MBPS 0 C~+85 C