Bilder dienen nur der Illustration
| Hersteller-Nummer | K4B2G1646E-BCH9 |
| Hersteller | SAMSUNG |
| Produktkategorie | DDR3 SDRAM |
| IC-Code | 128MX16 DDR3 |
| Andere Bezeichnungen | K4B2G1646E-BCH90 |
| K4B2G1646E-BCH9000 | |
| K4B2G1646E-BCH9T | |
| K4B2G1646E-BCH9T00 |
| Gehäuse | FBGA-96 |
| Verpackung | |
| RoHS | RoHS |
| Spannungsversorgung | 1.5 V |
| Betriebstemperatur | 0 C~+85 C |
| Geschwindigkeit | 1333 MBPS |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 128M |
| Bit Organization | x16 |
| Density | 2G |
| Internal Banks | 8 Banks |
| Power | Normal Power |
| Generation | 6th Generation |
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4B2G1646E-BCH9 | 1.435 | Anfrage senden | |
| K4B2G1646E-BCH9 | 200 | 1243+ | Anfrage senden |
| K4B2G1646E-BCH9 | 80 | DC12 | Anfrage senden |
| K4B2G1646E-BCH9 | 80 | 12 | Anfrage senden |
| K4B2G1646E-BCH9 | 2.240 | 12+ | Anfrage senden |
| K4B2G1646E-BCH9 | 420 | Anfrage senden | |
| K4B2G1646E-BCH9 | 3.360 | Anfrage senden | |
| K4B2G1646E-BCH9 | 1.120 | 13+ | Anfrage senden |
| K4B2G1646E-BCH9 | 2.560 | 14+ | Anfrage senden |
| K4B2G1646E-BCH9 | 4.480 | Anfrage senden |
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| H5TQ2G63BFR-H9CR | FBGA-96 | 1.5 V | 1333 MBPS | 0 C~+85 C |
| H5TQ2G63DFR-H9C (128X16 DDR3- | FBGA-96 | 1.5 V | 1333 MBPS | 0 C~+85 C |
| H5TQ2G63DFR-H9C0 | FBGA-96 | 1.5 V | 1333 MBPS | 0 C~+85 C |
| H5TQ2G63DFR-H9CR | FBGA-96 | 1.5 V | 1333 MBPS | 0 C~+85 C |
| H5TQ2G63FFR-H9CR | FBGA-96 | 1.5 V | 1333 MBPS | 0 C~+85 C |
| HXB15H2G160CF-15H | FBGA-96 | 1.5V | 1333 MBPS | 0 C~+85 C |
| IS43TR16128-15HBL | FBGA-96 | 1.5 V | 1333 MBPS | 0 C~+85 C |
| IS43TR16128A-15HBL | FBGA-96 | 1.5 V | 1333 MBPS | 0 C~+85 C |
| IS43TR16128B-15HB | FBGA-96 | 1.5 V | 1333 MBPS | 0 C~+85 C |
| IS43TR16128B-15HBL | FBGA-96 | 1.5 V | 1333 MBPS | 0 C~+85 C |